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| Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4590 SFH 4595 2.7 2.3 2.05 R 1.95 2.7 2.4 Chip position 4.5 7.5 3.9 5.5 (3.2) (R 2.8) (3.2) 5.8 5.4 GEO06968 14.7 13.1 2.54 mm spacing 0...0.1 3.7 3.3 Cathode 4.5 3.9 7.7 7.1 Chip position 8.0 7.4 15.5 14.7 2.54 mm spacing 2.05 R 1.95 2.7 2.4 4.5 3.9 4.8 4.4 SFH 4590 (3.2) (R 2.8) (3.2) 5.8 5.4 GEO06969 Cathode 4.5 3.9 7.7 7.1 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 4.8 4.4 SFH 4595 1 1998-09-09 SFH 4590 SFH 4595 Wesentliche Merkmale q Hohe Pulsleistung sowie hoher Gesamtstrahlungsflu e q Sehr kurze Schaltzeiten (10 ns) q Geringe Vorwartsspannung und Leistungsaufnahme q Sehr hohe Langzeitstabilitat q Hohe Zuverlassigkeit q Gegurtet lieferbar q Geeignet fur Oberflachenmontage (SMT) q Gleiches Gehause wie Photodiode SFH 2500/ SFH 2505 und Phototransistor SFH 3500/ SFH 3505 q Spektrale Anpassung an Si-Photodetektoren Anwendungen q Schnelle Datenubertragung mit Features q High pulse power and high radiant flux e q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q High reliability q Available on tape and reel q Suitable for surface mounting (SMT) q Same package as photodiode SFH 2500/ SFH 2505 and phototransistor SFH 3500/ SFH 3505 q Spectral match with silicon photodetectors Applications q High data transmission rate up to 100 Mbaud q q q q q Ubertragungsraten bis zu 100 Mbaud (IR Tastatur, Joystick, Multimedia) Analoge und digitale Hi-Fi Audio- und Videosignalubertragung Batteriebetriebene Gerate (geringe Stromaufnahme) Anwendungen mit hohen Zuverlassigkeitsanspruchen bzw. erhohten Anspruchen Alarm- und Sicherungssysteme IR Freiraumubertragung (IR keyboard, Joystick, Multimedia) q Analog and digital Hi-Fi audio and video signal transmission q Low power consumption (battery) equipment q Suitable for professional and high-reliability applications q Alarm and safety equipment q IR free air transmission Typ Type SFH 4590 SFH 4595 Bestellnummer Ordering Code on request on request Gehause Package 5 mm-LED-Gehause (T1 3/4), klar, Anschlusse im 2,54-mm Raster, Anodenkennzeichnung: kurzer Anschlu 5-mm-LED package (T1 3/4), clear, solder tabs 2.54-mm (1/10"), anode marking: short lead Semiconductor Group 2 1998-09-09 SFH 4590 SFH 4595 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Sperrschicht - Umgebung, freie Beinchenlange max. 10 mm Thermal resistance junction - ambient, lead length between package bottom and PCB max. 10 mm Symbol Symbol Top; Tstg VR IF (DC) IFSM Ptot RthJA Wert Value - 40 ... + 100 3 100 2 200 375 Einheit Unit C V mA A mW K/W Semiconductor Group 3 1998-09-09 SFH 4590 SFH 4595 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength of peak emission IF = 100 mA, tP = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tP = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Symbol Symbol peak Wert Value 880 Einheit Unit nm 25 nm A LxB LxW 14 0.09 0.3 x 0.3 10 Grad deg. mm2 mm ns Schaltzeiten, Ie von 10% auf 90% und von tr, tf 90% auf 10%, bei IF = 100 mA, tP = 20 ms, RL = 50 Switching times, Ie from 10% to 90% and from 90% to10%, IF = 100 mA, tP = 20 ms, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 3 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA Co 35 pF VF VF IR 1.5 ( 2.0) 3.0 ( 3.8) 0.01 ( 10) V V A e 25 mW TCI - 0.44 %/K Semiconductor Group 4 1998-09-09 SFH 4590 SFH 4595 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Lotbedingungen Soldering Conditions Tauch-, Schwall- und Schlepplotung Dip, wave and drag soldering Lotbadtemperatur Maximal zulassige Lotzeit Max. perm. soldering time 10 s Abstand Lotstelle - Gehause Distance between solder joint and case Kolbenlotung (mit 1,5-mm-Kolbenspitze) Iron soldering (with 1.5-mm-bit) Temperatur des Kolbens Maximale zulassige Lotzeit Abstand Lotstelle - Gehause Distance between solder joint and case Symbol Ie min Ie typ Ie typ Werte Values 25 60 350 Einheit Unit mW/sr Symbol Symbol TCV TC Wert Value -2 + 0.13 Einheit Unit mV/K nm/K mW/sr Temperature of the soldering bath 260 C Temperature Max. permissiof the solder- ble soldering ing iron time 300 C 3s 1.5 mm 1.5 mm Semiconductor Group 5 1998-09-09 SFH 4590 SFH 4595 I Relative spectral emission Irel = f () 100 % rel 90 80 OHF00366 Radiant intensity e ---------------- = f (I F) - Single pulse, tp = 20 s e (100 mA) 1 I e 100mA Max. permissible forward current IF = f (TA) 120 OHF00359 e 10 2 OHF00363 F mA 100 10 70 60 50 40 30 20 10 0 700 750 800 850 900 nm 1000 80 R thjA = 375 K/W 10 0 60 40 10 -1 20 10 -2 -2 10 10 -1 10 0 F A 10 1 0 0 20 40 60 80 100 C 120 TA Forward current IF = f (VF) single pulse, tp = 20 s 10 1 OHF00362 Radiation characteristics Irel = f () 40 30 20 10 0 1.0 50 0.8 OHF00265 F A 10 0 60 0.6 70 10 -1 0.4 80 90 0.2 0 10 -2 0 0.5 1 1.5 2 2.5 V 3 VF 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Permissible pulse power Duty cycle D = parameter, TA = 25 C 10 1 OHF00361 F A 5 tp D= tp T T D = 0.005 0.01 0.02 0.05 0.1 0.2 0.5 F 10 0 5 10 -1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp Semiconductor Group 6 1998-09-09 |
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