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IIIIIIIIIIIIIIIIIIIIIII III I III I I I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII I IIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I III II I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I III II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII
* * * * * * * Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers. *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) THERMAL CHARACTERISTICS MAXIMUM RATINGS
OFF CHARACTERISTICS Collector-Cutoff Current (VCE = 40 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) Thermal Resistance, Junction to Ambient (1) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation (1) @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
(1) These ratings are applicable when surface mounted on the minimum pad sizes recommended. * Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (continued)
DPAK For Surface Mount Applications
Complementary Darlington Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 2
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Available on 16 mm Tape and Reel for Automatic Handling ("T4" Suffix) Surface Mount Replacements for 2N6034- 2N6039 Series Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc Complementary Pairs Simplifies Designs
Characteristic
Characteristic
Rating
v
v
VCEO(sus)
Symbol
Symbol
Symbol
TJ, Tstg
VCEO
RJC
ICEO
RJA
VCB
VEB
PD
PD
IC
IB
- 65 to + 150
Min
80
--
MJD6036 MJD6039
1.75 0.014
71.4
6.25
Max
20 0.16
100
80
80
4 8
5
Max
10
--
mAdc
Watts W/_C
Watts W/_C
_C/W
_C/W
Adc
Unit
Unit
Unit
Vdc
Adc
Vdc
Vdc
Vdc
_C
SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
MJD6036 PNP MJD6039
CASE 369A-13
CASE 369-07
Order this document by MJD6036/D
NPN
inches mm
1
0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8 0.165 4.191 0.190 4.826
t, TIME ( s)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJD6036 MJD6039
ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit ON CHARACTERISTICS (1) DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 2 Adc, VCE = 4 Vdc) hFE -- 1000 500 -- -- -- Collector-Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) Base-Emitter On Voltage (IC = 2 Adc, VCE = 4 Vdc) VCE(sat) VBE(on) 2.5 Vdc -- 2.8 Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) hfe 25 -- -- Cob pF (1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2%.
MJD6036 MJD6039
-- --
200 100
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS VCC D1, MUST BE FAST RECOVERY TYPE, e.g.: - 30 V 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA RC SCOPE TUT V2 RB APPROX +8 V 8 k 120 51 D1 0 V1 APPROX +4V -12 V 25 s tr, tf 10 ns DUTY CYCLE = 1%
4 VCC = 30 V IB1 = IB2 IC/IB = 250 TJ = 25C 2 tf 1 0.8 0.6 0.4 PNP NPN 0.1 td @ VBE(off) = 0 tr ts
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
0.2 0.04 0.06
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
2
4
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
2
Motorola Bipolar Power Transistor Device Data
MJD6036 MJD6039
TYPICAL ELECTRICAL CHARACTERISTICS
1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
D = 0.5 0.2 0.1 0.05 0.01 RJC(t) = r(t) RJC RJC = 6.25C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk)
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1 23 5 10 t, TIME OR PULSE WIDTH (ms)
20
50
100
200 300
500
1000
Figure 3. Thermal Response
TA TC 2.5 25 0.1 ms PD, POWER DISSIPATION (WATTS) 0.5 ms 5 ms 2 20 TC
IC, COLLECTOR CURRENT (AMPS)
10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 1 2 3 5 7 10 1 ms
1.5 15
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TJ = 150C CURVES APPLY BELOW RATED VCEO 20 30
1 10
dc
TA SURFACE MOUNT
0.5
5
50
70
100
0
0
25
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
75 100 T, TEMPERATURE (C)
125
150
Figure 4. Maximum Rated Forward Biased Safe Operating Area
Figure 5. Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 6 and 7 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. T J(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
200 TC = 25C C, CAPACITANCE (pF) 100 70 50 30 20 PNP NPN 0.2 0.4 0.6 1 2 4 6 10 20 40 Cob
Cib
10 0.04 0.06 0.1
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
3
MJD6036 MJD6039
TYPICAL ELECTRICAL CHARACTERISTICS
PNP MJD6036
6k 4k hFE , DC CURRENT GAIN 3k 2k 25C TC = 125C VCE = 3 V 4k hFE , DC CURRENT GAIN 3k 2k 25C 6k TJ = 125C VCE = 3 V
NPN MJD6039
- 55C 1k 800 600 400 300 0.04 0.06
- 55C 1k 800 600 400 300 0.04 0.06
0.1
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
2
4
0.1
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
2
4
Figure 7. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.4 3 2.6 2.2 1.8 1.4 1 0.6 0.1 IC = 0.5 A TJ = 125C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.4 TJ = 125C 3 2.6 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 IC = 0.5 A
1A
2A
4A
1A
2A
4A
0.2
0.5
1
2
5
10
20
50
100
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2 TJ = 25C 1.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V V, VOLTAGE (VOLTS)
2.2 TJ = 25C 1.8 VBE(sat) @ IC/IB = 250
1.4
1.4
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
1 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06
0.6
0.2 0.04 0.06
0.1
0.2
0.4
0.6
1
2
4
0.1
0.2
0.4
0.6
1
2
4
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data
MJD6036 MJD6039
PNP MJD6036
+ 0.8 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENTS (mV/C) 0 - 0.8 - 1.6 - 2.4 - 3.2 -4 - 4.8 0.04 0.06 VB for VBE 25C to 150C *VC for VCE(sat) - 55C to 25C 25C to 150C *APPLIES FOR IC/IB < hFE/3 25C to 150C + 0.8 *APPLIED FOR IC/IB < hFE/3 0 - 0.8 - 1.6 - 2.4 - 3.2 -4 VC for VBE 25C to 150C 25C to 150C VC for VCE(sat) - 55C to 25C 25C to 150C
NPN MJD6039
0.1
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
2
3
4
- 4.8 0.04 0.06
0.1
0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP)
2
3
4
Figure 10. Temperature Coefficients
105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 TJ = 150C 100C 25C 10-1 + 0.6 + 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1 VBE, BASE-EMITTER VOLTAGE (VOLTS) - 1.2 - 1.4 REVERSE VCE = 30 V FORWARD
105 REVERSE 104 103 102 TJ = 150C 101 100 100C VCE = 30 V FORWARD
25C 10-1 - 0.6 - 0.4 - 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1 VBE, BASE-EMITTER VOLTAGE (VOLTS)
+ 1.2 + 1.4
Figure 11. Collector Cut-Off Region
PNP MJD6036
COLLECTOR
NPN MJD3039
COLLECTOR
BASE
BASE
8k
60
8k
60
EMITTER
EMITTER
Figure 12. Darlington Schematic
Motorola Bipolar Power Transistor Device Data
5
MJD6036 MJD6039
PACKAGE DIMENSIONS
-T- B V R
4
SEATING PLANE
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 ---
S
1 2 3
A K F L D G
2 PL
Z U
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 369A-13 ISSUE W
B V R
4
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27
A
1 2 3
S -T-
SEATING PLANE
K
F D G
3 PL M
J H 0.13 (0.005) T
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
CASE 369-07 ISSUE K
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6
Motorola Bipolar Power Transistor Device Data
*MJD6036/D*
MJD6036/D

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