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| v00.0404 MICROWAVE CORPORATION HMC490LP5 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Features Noise Figure: 2.5 dB +25 dBm P1dB Output Power Gain: 23 dB +34 dBm Output IP3 +5V Supply 50 Ohm Matched Input/Output 25 mm2 Leadless QFN SMT Package 8 AMPLIFIERS - SMT Typical Applications The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * VSAT * Military EW, ECM & C3I Functional Diagram General Description The HMC490LP5 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier which operates between 12 and 16 GHz. The HMC490LP5 provides 23 dB of gain, 2.5 dB noise figure and an output IP3 of +34 dBm from a +5.0 V supply voltage. This versatile amplifier combines excellent, stable +25 dBm P1dB output power with very low noise figure making it ideal for receive and transmit applications.The amplifier is packaged in a leadless 5 mm x 5 mm QFN surface mount package. Electrical Specifications, TA = +25 C, Vdd = 5V, Idd = 200 mA* Parameter Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.) 22 20 Min. Typ. 12 - 16 23 0.03 2.5 8 8 25 27 34 200 0.04 3.5 Max. Units GHz dB dB/ C dB dB dB dBm dBm dBm mA * Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 318 v00.0404 MICROWAVE CORPORATION HMC490LP5 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz GaAs MMIC SUB-HARMONICALLY Gain vs. Temperature PUMPED MIXER Broadband Gain & Return Loss 30 25 20 RESPONSE (dB) 15 10 5 0 -5 -10 -15 -20 8 10 12 14 16 18 20 FREQUENCY (GHz) S21 S11 S22 17 - 25 GHz 30 28 26 24 20 18 16 14 12 10 8 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25 C +85 C -40 C 8 AMPLIFIERS - SMT 8 - 319 Input Return Loss vs. Temperature 0 -2 RETURN LOSS (dB) -4 -6 -8 -10 -12 -14 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25 C +85 C -40 C Output Return Loss vs. Temperature 0 GAIN (dB) RETURN LOSS (dB) 22 -5 -10 -15 +25 C +85 C -40 C -20 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) Noise Figure vs. Temperature 10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +25 C +85 C -40 C Output IP3 vs. Temperature 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 10 11 12 13 14 15 16 FREQUENCY (GHz) OIP3 (dBm) +25 C +85 C -40 C 17 18 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0404 HMC490LP5 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz 8 AMPLIFIERS - SMT P1dB vs. Temperature 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 11 12 13 14 15 16 FREQUENCY (GHz) Psat vs. Temperature 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 11 12 13 14 15 16 FREQUENCY (GHz) P1dB (dBm) +25 C +85 C -40 C Psat (dBm) +25 C +85 C -40 C 17 18 17 18 Gain, Noise Figure & OIP3 vs. Supply Voltage @ 14 GHz, Idd= 200 mA 40 38 GAIN (dB), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 3.5 3.75 4 4.25 4.5 4.75 5 5.25 Gain OIP3 Noise Figure Power Compression @ 14 GHz 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 Pout (dBm), GAIN (dB), PAE (%) 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 5.5 NOISE FIGURE (dB) Pout (dBm) Gain (dB) PAE (%) 0 2 4 6 8 10 Vdd (Vdc) INPUT POWER (dBm) Gain, Noise Figure & IP3 vs. Supply Current @ 14 GHz, Vdd= 5V* 34 32 GAIN (dB), OIP3 (dBm) 30 28 26 24 22 20 18 16 14 100 Gain OIP3 Noise Figure Reverse Isolation vs. Temperature 5 4.5 4 ISOLATION (dB) 3.5 3 2.5 2 1.5 1 0.5 0 200 -60 -70 10 11 12 13 14 15 16 17 18 FREQUENCY (GHz) -20 -30 -40 -50 NOISE FIGURE (dB) 0 -10 +25 C +85 C -40 C 125 150 Idd (mA) 175 * Idd is controlled by varying Vgg 8 - 320 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0404 HMC490LP5 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 29 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +5.5 Vdc -4.0 to 0 Vdc +10 dBm 175 C 2.65 W Typical Supply Current vs. Vdd Vdd (Vdc) +3.0 +3.5 +4.0 +4.5 +5.0 Idd (mA) 140 154 168 188 200 208 8 AMPLIFIERS - SMT 8 - 321 34 C/W -65 to +150 C -40 to +85 C +5.5 Note: Amplifier will operate over full voltage ranges shown above. Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0404 HMC490LP5 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz 8 AMPLIFIERS - SMT Pin Descriptions Pin Number 1, 2, 6-12, 14-19, 23, 24, 26, 27, 29-31 Function Description No connection. These pins may be connected to RF ground. Performance will not be affected. Interface Schematic N/C 3, 5, 20, 22 GND Package bottom must also be connected to RF/DC ground. 4 RF IN This pad is AC coupled and matched to 50 Ohms from 12 - 16 GHz. 13 Vgg Gate control for amplifier. Adjust to achieve Idd of 200 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 0.01 F are required. 21 RF OUT This pad is AC coupled and matched to 50 Ohms from 12 - 16 GHz. 25, 28, 32 Vdd3, 2, 1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.01 F are required. 8 - 322 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0404 HMC490LP5 GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Materials for Evaluation PCB 108402* Item J1 - J2 J3 - J8 C1 - C4 C5 - C8 U1 PCB** Description PC Mount SMA Connector DC Pin 1000pF Capacitor, 0402 Pkg. 4.7 F Capacitor, Tantalum HMC490LP5 108540 Evaluation PCB The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. ** Circuit Board Material: Rogers 4350 * Reference this number when ordering complete evaluation PCB. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 323 |
Price & Availability of HMC490LP5
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