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| SHINDENGEN Schottky Rectifiers (SBD) Dual D5SC4MR 40V 5A FEATURES Tj150*Z *oe *oe RRSM avalanche guaranteed P *oe Fully Isolated Molding OUTLINE DIMENSIONS Case : ITO-220 Unit : mm APPLICATION *oe Switching power supply *oe DC/DC converter *oe ome Appliances, Office Equipment Home H *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40*150 *Z Tj 150 *Z Operating Junction Temperature V RM 40 V Maximum Reverse Voltage RRSM 45 V Repetitive Peak Surge ReverseV Voltage Pulse width 0.5ms, duty 1/40 IO 5 A Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=136*Z 50 A Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125*Z 330 W Repetitive Peak Surge ReversePRRSM Power Pulse width 10Es, Rating of per diode, Tj=25*Z Dielectric Strength Vdis Terminals to case, AC 1 minute 1.5 kV TOR (Recommended torque*0.3Nm) 0.5 Nm Mounting Torque F *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings Unit VF IF =2.5A, Pulse measurement, Rating of per diode Max.0.55 V Forward Voltage IR V =V Pulse measurement, Rating of per diode Max.2.5 mA Reverse Current R RM, Cj f=1MHz,R V Typ.116 pF Junction Capacitance =10V, Rating of per diode AEjc junction to case Max.3.3 *Z/W Thermal Resistance Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D5SC4MR Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] D5SC4MR Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] D5SC4MR 1000 Reverse Current 100 Tc=150C [MAX] Tc=150C [TYP] Reverse Current IR [mA] 10 Tc=125C [TYP] Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] D5SC4MR 10 Reverse Power Dissipation Reverse Power Dissipation PR [W] 8 DC D=0.05 0.1 0.2 6 0.3 4 0.5 2 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T D5SC4MR 5 Forward Power Dissipation DC Forward Power Dissipation PF [W] D=0.8 4 0.3 3 0.05 2 0.2 0.1 SIN 0.5 1 0 0 1 2 3 4 5 6 7 8 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T D5SC4MR 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T D5SC4MR 10 Derating Curve Average Rectified Forward Current IO [A] 8 DC D=0.8 6 0.5 SIN 0.3 4 0.2 0.1 2 0.05 0 0 20 40 60 80 100 120 140 160 Heatsink Temperature Tf [C] VR = 20V 0 0 IO VR tp D=tp /T T D5SC4MR 100 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 80 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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