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BA 892
Silicon Rf Switching Diode Preliminary data * For VHF band switching in TV / VTR tuners * Low forward resistance, small capacitance, small inductance
2
1
VES05991
Type BA 892
Marking A
Ordering Code Q62702-A1214
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 35 100 -55 ...+125 -55 ...+150 Unit V mA C
VR IF T op T stg
Thermal Resistance Junction - ambient
1)
RthJA
450
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11
Au 1998-11-01 -03-1998
BA 892
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 20 1 A V
Unit
IR VF
-
VR = 20 V
Forward voltage
I F = 100 mA
AC characteristics Diode capacitance
CT
0.65 0.6 0.92 0.85 0.45 0.36 100 0.6 1.3 1.1
pF
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Forward resistance
rf
1/gp 0.7 0.5 -
I F = 3 mA, f = 100 MHz I F = 10 mA, f = 100 MHz
Reverse resistance
k nH
VR = 1 V, f = 100 MHz
Series inductance
Ls
Semiconductor Group Semiconductor Group
22
Au 1998-11-01 -03-1998
BA 892
Diode capacitance CT = f (V R) f = 1MHz
EHD07009
Forward resistance rf = f (I F) f = 100MHz
EHD07010
CT
2.0 pF 1.6
10 1
rf
1.2
10 0
0.8
0.4
0.0
0
10
20
V
30
10 -1
10 -1
10 0
10 1
mA
10 2
VR
F
Forward current IF = f (V F)
T A = 25C
10 3
mA
10 2
10 1
10 0
10 -1
10 -2 0.5
0.6
0.7
0.8
0.9
V
1.1
VF
Semiconductor Group Semiconductor Group
33
Au 1998-11-01 -03-1998

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