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Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
Unit: mm
0.70.1
s Features
q q q q
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1
4.20.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25C)
Ratings 130 80 7 25 15 50 2 150 -55 to +150 Unit V V V A A W C C
Solder Dip
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
14.00.5
4.0
s Absolute Maximum Ratings
16.70.3
7.50.2
1.30.2
0.5 +0.2 -0.1 0.80.1
2.540.25 5.080.5 1 2 3
1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A VCE = 2V, IC = 8A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A VCE = 10V, IC = 0.5A, f = 1MHz IC = 7A, IB1 = 0.7A, IB2 = - 0.7A, VCC = 50V 20 0.5 2.0 0.2 80 45 90 30 0.5 1.5 1.5 2.5 V V V V MHz s s s 260 min typ max 10 50 Unit A A V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
1
Power Transistors
PC -- Ta
60 20 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) TC=25C IB=300mA
2SD1964
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10 (1) IC/IB=10 (2) IC/IB=20 TC=25C
VCE(sat) -- IC
Collector power dissipation PC (W)
50
40
Collector current IC (A)
16
3
12
200mA 140mA 100mA
1 (2) 0.3 (1)
30
8
80mA 60mA
20 (2) (3) 0 0 20 40 60 80 100 120 140 160 (4)
0.1
10
4
40mA 20mA
0.03
0 0 2 4 6 8 10 12
0.01 0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 IC/IB=10 1000 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C
hFE -- IC
VCE=10V
3
Forward current transfer ratio hFE
300
TC=100C 25C
1 TC=100C 0.3 25C -25C 0.1
100 -25C 30
25C
10
0.03
3
0.01 0.1
0.3
1
3
10
0.1
0.3
1
3
10
1 0.1
0.3
1
3
10
30
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT -- IC
1000 300 100 30 10 3 1 0.3 0.1 0.01 0.03 0.01 0.1 0.3 1 3 10 0 1 VCE=10V f=1MHz TC=25C 10
ton, tstg, tf -- IC
Area of safe operation (ASO)
100 30 ICP 10ms DC 3 1 0.3 0.1 0.03 0.01 8 1 3 10 30 100 300 1000 Non repetitive pulse TC=25C t=1ms
Transition frequency fT (MHz)
Switching time ton,tstg,tf (s)
3
Collector current IC (A)
10
IC
1
tstg
0.3
ton tf
0.1 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=-IB2) VCC=50V TC=25C 2 3 4 5 6 7
0.03
Collector current IC (A)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink
2SD1964
Thermal resistance Rth(t) (C/W)
1000
100 (1) 10
(2)
1
0.1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
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2001 MAR

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