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| SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE ISSUE 2 - OCTOBER 1995 FMMD6050 2 DIODE PIN CONNECTION PARTMARKING DETAIL 5A 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Breakdown Voltage Voltage (IR=100A) Peak Forward Current Peak Forward Surge Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL V(BR) IF I FM Ptot Tj:Tstg MAX. VALUE 70 200 500 330 -55 to +150 UNIT V mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Breakdown Voltage Forward Voltage Reverse Current Recovery Time* Diode Capacitance SYMBOL V (BR) VF IR trr Cd MIN. 70 0.5 0.8 0.7 1.1 0.1 5 2.5 UNIT CONDITIONS. V V V A IR=10A IF=1mA IF=100mA VR=50V IF= IR=10mA, IR(REC) =1 mA VR=0, f=1MHz ns pF *For switching test circuit diagram see FMMD7000 datasheet PAGE NUMBER |
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