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UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23 D82 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation( Tc=25C) Collector dissipation( Ta=25C) Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Pc Ic Ic IB Tj TSTG RATING 40 30 5 10 1 3 7 0.6 150 -55 ~ +150 UNIT V V V W W A A A C C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Collector cut-off current Emitter cut-off current DC current gain(note 1) Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VCB=30V,IE=0 VEB=3V,Ic=0 VCE=2V,Ic=20mA VCE=2V,Ic=1A Ic=2A,IB=0.2A Ic=2A,IB=0.2A VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN TYP MAX 1000 1000 UNIT nA nA 30 100 200 150 0.3 1.0 80 45 400 0.5 2.0 V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R206-018,A UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR Note 1:Pulse test:PW<300s,Duty Cycle<2% CLASSIFICATION OF hFE2 RANK RANGE Q 100-200 P 160-320 E 200-400 TYPICAL PARAMETERS PERFORMANCE Fig.1 Static characteristics 150 Fig.2 Derating curve of safe operating areas 12 Fig.3 Power Derating -Ic,Collector current(A) 1.6 1.2 -IB=6mA -IB=5mA 100 Power Dissipation(W) 150 200 - Ic Derating(%) -IB=9mA -IB=8MA -IB=7mA S/ b 8 0.8 lim ite d D pa si is -IB=4mA -IB=3mA -IB=2mA -IB=1mA 50 4 n tio 0.4 lim d ite 0 0 4 8 12 16 20 0 -50 0 50 100 0 -50 0 50 100 150 200 -Collector-Emitter voltage(V) Tc,Case Temperature(C) Tc,Case Temperature(C) Fig.4 Collector Output capacitance 3 10 3 10 Fig.5 Current gainbandwidth product 1 10 Fig.6 Safe operating area Ic(max),Pulse Ic(max),DC 10 mS 1m S S 1m 0. Output Capacitance(pF) FT(MHz), Current gainbandwidth product 2 10 IE=0 f=1MHz VCE=5V 2 10 -Ic,Collector current(A) 0 1 10 10 0 IB=8mA 1 10 1 10 -1 10 0 10 10 0 -1 10 -2 10 -3 10 0 10 -2 10 -1 10 -2 10 10 10 0 1 10 2 10 -Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage Fig.7 DC current gain 3 10 4 10 Fig.8 Saturation Voltage VCE=-2V -Saturation Voltage(mV) DC current Gain,H FE 3 10 VBE(sat) 2 10 2 10 1 10 VCE(sat) 1 10 0 10 0 10 1 10 2 10 3 10 4 10 0 10 0 10 1 10 2 10 3 10 4 10 -Ic,Collector current(mA) -Ic,Collector current(mA) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R206-018,A UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R206-018,A UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R206-018,A |
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