View RF2105_337702.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RF2105L
2
Typical Applications
* 900 MHz ISM Band Applications * 400 MHz Industrial Radios * Digital Communication Systems * Driver Stage for Higher Power Applications * Commercial and Consumer Systems * Portable Battery-Powered Equipment
HIGH POWER LINEAR UHF AMPLIFIER
2
POWER AMPLIFIERS
0.025 0.080
Product Description
The RF2105L is a high power, high efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in digital cellular phone transmitters or ISM applications requiring linear amplification. It is packaged in a 16-lead ceramic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line.
0.258 0.242
1
0.075 0.065
0.033 0.017
0.150 0.050
0.258 0.242
R0.008 0.208 sq. 0.192
0.050
0.022 0.018
0.080
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: QLCC-16 Alumina
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 2.7V to 6.5V Supply * Up to 1.2W CW Output Power * 33dB Small Signal Gain * 48% Efficiency
1 VCC3 2 VCC1 3 GND 4 PD 5 6 RF IN
16
15
14 13 RF OUT 12 GND 11 RF OUT 10 RF OUT
RF OUT
VCC2
NC
NC
BIAS CIRCUIT
* Digitally Controlled Power Down Mode * Small Package Outline (0.25" x 0.25")
Ordering Information
RF2105L RF2105L PCBA High Power Linear UHF Amplifier Fully Assembled Evaluation Board
7 GND
8 NC
9 NC
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev B3 010720
2-19
RF2105L
Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load Operating Case Temperature Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +8.5 -0.5 to +6.5 700 +12 20:1 -40 to +100 -40 to +85 -40 to +150
Unit
VDC VDC mA dBm C C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum CW Output Power
Specification Min. Typ. Max.
Unit
Condition
T=25 C, VCC =5.8V, VPD =5.8V, ZLOAD =9, PIN =0dBm, Freq=840MHz
430 to 930 +30.8
MHz dBm
CW Efficiency at Max Output DC Current at Max Output Small-signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR Input Impedance
+29.3 +28.5 +30 +27.8 +27 48 450 33 -23 -36 -35 <2:1 50
dBm dBm dBm dBm dBm % mA dB dBc dBc dBc
VCC =5.8V, VPD =5.8V, ZLOAD =9 Note that increasing VCC above 5.8V does not result in higher output power; power may actually decrease. VCC =5.0V, VPD =5.0V, ZLOAD =9 VCC =4.4V, VPD =4.4V, ZLOAD =9 VCC =5.8V, VPD =5.8V, ZLOAD =12 VCC =5.0V, VPD =5.0V, ZLOAD =12 VCC =4.4V, VPD =4.4V, ZLOAD =12
Without external second harmonic trap
With external matching network; see application schematic With external matching network; see application schematic PEP-3dB POUT =+24.0dBm/tone POUT =+24.0dBm/tone POUT =+24.0dBm/tone
Two-Tone Specification
Average Two-Tone Power IM3 IM5 IM7 Two-Tone Current Drain Two-Tone Power-Added Eff. +27.0 -30 -32 -40 260 33 -25 -30 350 dBm dBc dBc dBc mA %
225
Power Control
Power Down "ON" Power Down "OFF" PD Input Current
VCC 0 3.7
2.7 to 6.5 2 60 80 100 120
V V 5.0 mA
VDC A mA mA mA mA
Voltage supplied to the input Voltage supplied to the input Only in "ON" state
Power Supply
Power Supply Voltage Total Idle Current Drain 10 VPD <0.1VDC, VCC =6.5V VPD =4.4VDC, VCC =6.5V VPD =5.0VDC, VCC =6.5V VPD =5.8VDC, VCC =6.5V VPD =6.5VDC, VCC =6.5V
80
165
2-20
Rev B3 010720
RF2105L
Pin 1 Function VCC2 Description
Positive supply for the second stage (driver) amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with a UHF bypassing capacitor). This inductance can be achieved with a short, thin microstrip line or with a low value chip inductor (~2.7nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor (see the application schematic for 430MHz operation). This inductance forms a matching network with the internal series capacitor between the second and third stages, setting the amplifier's frequency of maximum gain. An additional 1F bypass capacitor in parallel with the UHF bypass capacitor is also recommended, but placement of this component is not as critical. In most applications, pins 1, 2, and 3 can share a single 1F bypass capacitor. Positive supply for the active bias circuits. This pin can be externally combined with pin 3 (VCC1) and the pair bypassed with a single UHF capacitor, placed as close as possible to the package. Additional bypassing of 1F is also recommended, but proximity to the package is not as critical. In most applications, pins 1, 2, and 3 can share a single 1F bypass capacitor. Positive supply for the first stage (input) amplifier. This pin can be externally combined with pin 2 (VCC3) and the pair bypassed with a single UHF capacitor, placed as close as possible to the package. Additional bypassing of 1F is also recommended, but proximity to the package is not as critical. In most applications, pins 1, 2, and 3 can share a single 1F bypass capacitor. Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. In addition, for specified performance, the package's backside metal should be soldered to ground plane. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at VCC (3V to 6.5V), the device will be in full power mode delivering maximum available gain and output power capability. This pin may also be used to perform some degree of gain control or power control when set to voltages between 0V and VCC. It is not optimized for this function so the transfer function is not linear over a wide range as with other devices specifically designed for analog gain control; however, it may be usable for coarse adjustment or in some closed loop AGC systems. This pin should not, in any circumstance, be higher in voltage than VCC, nor should it ever be higher than 6.5V. This pin should also have an external UHF bypassing capacitor. Amplifier RF input. This is a 50 RF input port to the amplifier. It does not contain internal DC-blocking and therefore should be externally DC-blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC-blocking. Same as pin 4. Not internally connected. Not internally connected.
Interface Schematic
2
POWER AMPLIFIERS
2
VCC3
3
VCC1
4
GND
5
PD
6
RF IN
7 8 9
GND NC NC
Rev B3 010720
2-21
RF2105L
Pin 10 Function RF OUT Description
Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 10, 11, 13, and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through two of these four pins. Typically, pins 10 and 11 are connected to a network that creates a second harmonic trap. For 830MHz operation, this network is simply a single 2.4pF capacitor from both pins to ground. This capacitor series resonates with internal bond wires at two times the operating frequency, effectively shorting out the second harmonic. Shorting out this harmonic serves to increase the amplifier's maximum output power and efficiency, as well as to lower the level of the second harmonic output. Typically, pins 13 and 14 are externally connected very close to the package and used as the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC-blocking at the output. An additional network of a bias inductor and parallel resistor provides DC bias and helps to protect the output from high voltage swings due to severe load mismatches. Shunt protection diodes are included to clip peak voltage excursions above ~15V to prevent voltage breakdown in worst case conditions. Same as pin 10. Same as pin 4. Same as pin 10. Same as pin 10. Not internally connected. Not internally connected. This contact is the main ground contact for the entire device. Care should be taken to ensure that this contact is well soldered in order to prevent performance from being degraded from that indicated in the specifications.
Interface Schematic
2
POWER AMPLIFIERS
11 12 13 14 15 16 Pkg Base
RF OUT GND RF OUT RF OUT NC NC GND
2-22
Rev B3 010720
RF2105L
Application Schematic for 430MHz Operation
VCC 1 F 10 100 pF 100 pF 220 nH 180
15 nH 4.7 nH 1 2 3 16 15 14 13 12 11 10 6 7 8 9 10 pF
33 pF RF OUT 13 pF
2
POWER AMPLIFIERS
RF OUT
BIAS CIRCUIT
100 pF 4 1 nF PD 100 pF Ground Back of Package 5
RF IN 100 pF
Application Schematic for 840MHz Operation
VCC 1 F 0.01" x 0.20" (PCB material: FR-4, Thickness: 0.031") 100 pF 1 2 3 100 pF 4 PD 0/5 V DC 5 100 pF 6 RF IN 100 pF 7 8 9 Ground Back of Package 11 10 2.4 pF 16 15 14 13 12 100 pF 47 nH 180
1.8 nH
6.8 pF 4.7 pF
BIAS CIRCUIT
Rev B3 010720
2-23
RF2105L
Application Schematic for 915MHz Operation
VCC 1 F 100 pF 0.01" x 0.15" (PCB material: FR-4, Thickness: 0.031") 100 pF 1 2 3 100 pF 4 PD 0/5 VDC 5 100 pF 6 RF IN 100 pF 7 8 9 Ground Back of Package 11 10 1.8 pF 16 15 14 13 12 47 nH 180
2
POWER AMPLIFIERS
5.6 pF RF OUT 3.9 pF
BIAS CIRCUIT
Evaluation Board Schematic (840MHz)
(Download Bill of Materials from www.rfmd.com.)
L1 47 nH P1-1 C10 1 F C9 1 nF C8 100 nF C7 330 pF C6 100 pF C11 100 nF R3 180 L2 1.8 nH C12 4.7 pF 13 12 11 10 6 7 8 9 P1-1 C13 2.4 pF C14 100 nF P1 1 2 P1-3 3 VCC GND PD C12 is adjusted for 840 MHz C2 6.8 pF SMA J2 RF OUT 2105400 Rev A
0.01"x0.2" PCB mat'l: FR-4, Thickness: 0.031" 1 2 C5 100 pF C4 100 pF 3 4 P1-3 SMA J1 RF IN C1 100 pF 5 16 15 14
50 strip
BIAS CIRCUIT
C3 330 pF 50 strip
2-24
Rev B3 010720
RF2105L
Evaluation Board Layout Board Size 3.020" x 2.020"
Board Thickness 0.031", Board Material FR-4
2
POWER AMPLIFIERS
Rev B3 010720
2-25
RF2105L
2
POWER AMPLIFIERS
2-26
Rev B3 010720

▲Up To Search▲

Price & Availability of RF2105

	To Download RF2105 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .