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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information
Power ManagerTM
* * * * *
Gallium Arsenide Power Rectifier
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: Planar Epitaxial Construction Nitride Passivation for Stable Blocking Characteristics Monolithic Dual Die Available (MGR2018CT) Epoxy Meets UL94, VO @ 1/8 Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns) Mechanical Characteristics * Weight: 1.9 grams (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds * Shipped 50 units per plastic tube * Marking: MGR1018
MGR1018
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
1,3
2,4
4
1 2 3
CASE 221A-06 TO-220AB Value 180 Unit V
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage DC Forward Current (TC = 110C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 85C) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Symbol VRRM VRWM VR IDC IFRM IFSM TJ, Tstg
10 20 60 - 55 to 175
A A A C C/W
THERMAL CHARACTERISTICS
Thermal Resistance - Junction to Case - Junction to Ambient RJC RJA 4.3 64
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), see Figure 2 (IF = 10 A) (IF = 5 A) Maximum Instantaneous Reverse Current, see Figure 4 (VR = 180 V) (VR = 90 V) Typical Reverse Recovery Time (2) (VR = 150 V, IF = 5 A, di/dt = 200 A/s) (VR = 150 V, IF = 10 A, di/dt = 200 A/s) Typical Peak Reverse Recovery Current (VR = 150 V, IF = 5 A, di/dt = 200 A/s) (VR = 150 V, IF = 10 A, di/dt = 200 A/s)
Note: This data sheet contains advance information only and is subject to change without notice. (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. (2) trr measured projecting from 25% of IRM to ground.
VF
TJ=25C 1.4 1.1
TJ=125C 1.5 1.1 TJ=125C 685 120 TJ=125C 12.4 12.7 TJ=125C 1.6 1.7
V
IR
TJ=25C 25 1
A
trr
TJ=25C 12.6 13
ns
IRM
TJ=25C 1.5 1.6
A
(c)Motorola RF Device Data Motorola, Inc. 1995
1
100
100
50
50
20
20
I F , INSTANTANEOUS FORWARD CURRENT (A)
I F , INSTANTANEOUS FORWARD CURRENT (A)
10
10
5.0 TJ = 175C
5.0 TJ = 175C TJ = 25C 2.0 TJ = 125C 1.0
2.0 TJ = 25C 1.0
0.5
TJ = 125C
0.5
0.2
0.2
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VF , INSTANTANEOUS FORWARD VOLTAGE (V)
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VF , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
1000 100 I R , REVERSE CURRENT (m A) 10 1 0.1 0.01 0.001 TJ = 25C TJ = 175C I R , MAXIMUM REVERSE CURRENT (m A) 1000 100 10 1 0.1 0.01 0.001
Figure 2. Maximum Forward Voltage
TJ = 125C
TJ = 125C
TJ = 25C
0
20
40
60
80
100
120
140
160
180
0
20
40
60
80
100
120
140
160
180
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
2
Motorola RF Device Data
16 I O, AVERAGE FORWARD CURRENT (A) 14 12 10 8.0 6.0 4.0 2.0 0 0 50 100 Ipk/Io = p square wave dc
35 P FO, AVERAGE POWER DISSIPATION (W) freq = 20 kHz TJ = 175C 30 25 20 15 10 5 0 0 4.0 8.0 12 IO, AVERAGE FORWARD CURRENT (A) 16 Ipk/Io = p square wave dc
150
200
TC, CASE TEMPERATURE (C)
Figure 5. Current Derating Per Leg
Figure 6. Forward Power Dissipation Per Leg
20 t rr , REVERSE RECOVERY TIME (ns) t rr , REVERSE RECOVERY TIME (ns) VR = 150 V IF = 10 A 15 IF = 1 A IF = 5 A 10
20 VR = 150 V IF = 10 A 15 IF = 1 A IF = 5 A 10
5.0 50
5.0 100 150 200 250 300 50 100 150 200 250 300 di/dt, CURRENT SLEW RATE (A/ms) di/dt, CURRENT SLEW RATE (A/ms)
Figure 7. Typical trr Characteristics, TJ = 25C
Figure 8. Typical trr Characteristics, TJ = 125C
0 I RM, MAXIMUM REVERSE CURRENT (A) VR = 150 V - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 - 3.0 50 IF = 10 A IF = 1 A IF = 5 A I RM, MAXIMUM REVERSE CURRENT (A)
0 VR = 150 V - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 - 3.0 50 IF = 10 A IF = 1 A IF = 5 A
100
150
200
250
300
100
150
200
250
300
di/dt, CURRENT SLEW RATE (A/ms)
di/dt, CURRENT SLEW RATE (A/ms)
Figure 9. Typical IRM Characteristics, TJ = 25C
Figure 10. Typical IRM Characteristics, TJ = 125C
Motorola RF Device Data
3
1.0 R(T), NORMALIZED TRANSIENT THERMAL RESISTANCE
0.5
SINGLE PULSE
0.2
0.1 0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2 t, TIME (s)
0.5
1.0
2.0
5.0
10
20
50
100
Figure 11. Typical Thermal Response
1000 500 C, CAPACITANCE (pF) TJ = 25C
200 100 50
20 10
1
2
5
10
20
50
100
200
VR, REVERSE VOLTAGE (V)
Figure 12. Typical Capacitance
4
Motorola RF Device Data
PACKAGE DIMENSIONS
-T- B
4
SEATING PLANE
F T S
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04
Q
123
A U K
STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE
H Z L V G D N R J
CASE 221A-06 ISSUE Y
Motorola RF Device Data
5
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
*MGR1018/D*
Motorola RFMGR1018/D Device Data

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