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| IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 10.41 10.67 N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) 0.89 1.14 16.38 16.89 13.39 13.64 123 12.70 19.05 500V 3.7A W 1.6W 2.54 BSC 2.65 2.75 FEATURES * HERMETICALLY SEALED TO-220 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT TO-220M - Metal Package IRFY430 Pin 1 - Gate Pin 2 - Drain Pin 3 - Source * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE IRFY430M Pin 1 - Drain Pin 2 - Source Pin 3 - Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg TL RqJC Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 20V 3.7A 2.4A 14A 45W 0.36W/C -55 to 150C 300C 1.67C/W max. Notes 1) Pulse Test: Pulse Width 300ms, d 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 IRFY430M IRFY430M ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 1 Min. 500 Typ. Max. Unit V ID = 1mA DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance 1 Reference to 25C ID = 2.4A ID = 3.7A ID = 250mA IDS = 2.4A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS VGS = 10V 1 0.78 1.6 1.84 2 1.5 25 250 100 -100 610 135 65 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate - Source Charge 1 Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time mA nA pF ID =3.7A ID = 3.7A 19.8 2.2 5.5 29.5 4.6 19.7 35 30 55 30 3.7 14 nC nC VDS = 0.5BVDSS VDD = 250V ID =3.7A RG = 7.5W VGS = 10V ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 A V ns Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS = 3.7A VGS = 0 IS = 3.7A TC = 25C TJ = 25C Negligible 8.7 8.7 1.4 900 7.0 di / dt 100A/ms VDD 50V mC PACKAGE CHARACTERISTICS Internal Drain Inductance (6mm down drain lead to centre of die) Internal Source Inductance (6mm down source lead to centre of source bond pad) nH Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 |
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