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| PHOTODIODE Si photodiode S2386 series For visible to IR, general-purpose photometry Features Applications l High sensitivity l Low dark current l High reliability l High linearity l Analytical equipment l Optical measurement equipment I General ratings / Absolute maximum ratings Type No. S2386-18K S2386-18L S2386-5K S2386-44K S2386-45K S2386-8K Dimensional outline/ Window material * /K /L /K /L Package (mm) TO-18 TO-5 TO-8 Active area size (mm) 1.1 x 1.1 2.4 x 2.4 3.6 x 3.6 3.9 x 4.6 5.8 x 5.8 Effective active area (mm2) 1.2 5.7 13 17.9 33 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (C) (C) 30 -40 to +100 -55 to +125 I Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Spectral Peak response sensitivity range wavelength l lp Photo sensitivity S (A/W) Terminal Dark Short circuit Shunt Temp. Rise time current capacitance tr current resistance coefficient Ct NEP ID Isc of ID VR=0 V Rsh VR=0 V V4=10 mV Type No. TCID RL=1 kW 100 lx V4=10 mV Max. f=10 kHz GaP He-Ne GaAs Min. Typ. lp LED laser LED Min. Typ. 560 nm 633 nm 930 nm (A) (A) (pA) (times/C) (s) (nm) (nm) (pF) (G9) (G9) (W/Hz1/2) S2386-18K 1 1.3 2 0.4 140 5 100 6.8 x 10-16 S2386-18L 4 5.7 S2386-5K 4.4 6.0 5 1.8 730 2 50 9.6 x 10-16 1.12 320 to 1100 960 0.6 0.38 0.43 0.59 S2386-44K 9.6 12 20 3.6 1600 0.5 25 1.4 x 10-15 S2386-45K 12 17 30 5.5 2300 0.3 S2386-8K 26 33 50 10 4300 0.2 10 2.1 x 10-15 * Window material K: borosilicate glass, L: lens type borosilicate glass 1 Si photodiode I Spectral response 0.7 0.6 (Typ. Ta=25 C) +1.5 S2386 series I Photo sensitivity temperature characteristic (Typ.) TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 0.2 +1.0 +0.5 0 0.1 0 200 400 600 800 1000 -0.5 200 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KSPDB0110EA KSPDB0058EB I Directivity 20 30 10 0 100 % 10 20 30 I Rise time vs. load resistance 1 ms (Typ. Ta=25 C, VR=0 V) 80 % 40 60 % 40 100 s S2386-8K S2386-45K RISE TIME S2386-18L 10 s 50 40 % 60 70 S2386-18K 80 90 20% 50 60 70 80 90 S2386-18K 1 s S2386-5K 100 ns S2386-44K 10 ns 102 103 104 105 RELATIVE SENSITIVITY LOAD RESISTANCE () KSPDB0111EA KSPDB0112EA 2 Si photodiode I Dark current vs. reverse voltage (Typ. Ta=25 C) 10 T S2386-5K 1 T S2386 series I Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 1 nA S2386-18K/-18L S2386-45K 100 pA S2386-8K SHUNT RESISTANCE 100 G 10 G S2386-44K 1 G 100 M 10 M 1 M DARK CURRENT 10 pA 1 pA 100 fA S2386-18K/-5K/-44K/-45K 10 fA 0.01 0.1 1 10 100 100 k -20 0 20 40 60 80 REVERSE VOLTAGE (V) AMBIENT TEMPERATURE (C) KSPDB0113EA KSPDB0114EA 3 Si photodiode I Dimensional outlines (unit: mm) S2386-18K WINDOW 3.0 0.2 5.4 0.2 4.7 0.1 S2386 series S2386-18L 2.05 0.3 3.6 0.2 14 5.4 0.2 3.6 0.2 4.7 0.1 0.45 LEAD 2.3 0.45 LEAD 2.54 0.2 14 2.3 2.54 0.2 CONNECTED TO CASE CONNECTED TO CASE KSPDA0102EB KSPDA0048EB S2386-5K/-44K/-45K 9.1 0.2 4.1 0.2 S2386-8K 13.9 0.2 5.0 0.2 1.8 WINDOW 5.9 0.1 8.1 0.1 WINDOW 10.5 0.1 12.35 0.1 PHOTOSENSITIVE SURFACE 0.45 LEAD 2.8 PHOTOSENSITIVE SURFACE 0.45 LEAD 20 5.08 0.2 7.5 0.2 MARK ( 1.4) CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0103EA 15 KSPDA0104EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2002 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KSPD1035E02 Oct. 2002 DN |
Price & Availability of S2386-44K
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