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LS318 Linear Integrated Systems LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS FEATURES LOG CONFORMANCE re =1 TYP. C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted) Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor 3 5 E2 10mA B1 2 6 B2 -65C to +200C +150C ONE SIDE 250mW 2.3mW/C BOTH SIDES 500mW 4.3mW/C 1 C1 B1 E1 E2 B2 7 C2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTICS LS318 re Log Conformance 1.5 BVCBO BVCEO BVEBO BVCCO hFE hFE hFE VCE(SAT) ICBO IEBO COBO CC1C2 IC1C2 fT NF Collector-Base Breakdown Voltage Collector to Emitter Voltage Emitter-Base Breakdown Voltage Collector to Collector Voltage DC Current Gain DC Current Gain DC Current Gain Collector Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 25 25 6.2 45 150 600 150 600 150 0.25 0.2 0.2 2 2 0.5 200 3 MAX. MIN. MIN. MIN. MIN. MIN. MAX. MIN. MAX. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX. UNITS V V V V CONDITIONS IC= 10-100-1000A IC = 10A IC = 10A IE = 10A IC = 10A IC = 10A IC = 100A IC = 1mA IE = 0 IB = 0 IC = 0 IE = 0 VCE = 5V NOTE 2 VCE = 5V VCE = 5V VCE = 5V VCB = 20V VEB = 3V VCB = 3V V nA nA pF pF nA MHz dB IC = 1mAIB = 0.1 mA IE = 0 IC = 0 IE = 0 VCC = 0 VCC = 45V IC = 1mA IC = 100A BW = 200Hz f=1KHz VCE = 5V VCE = 5V RG = 10 K Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160 * FAX: (510) 353-0261 MATCHING CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTICS LS318 Base Emitter Voltage Differential 0.4 |VBE1-VBE2| 1 |(VBE1-VBE2)|/C |IB1- IB2| |(IB1-IB2)|/C hFE1/hFE2 Base Emitter Voltage Differential Change with Temperature Base Current Differential Base Current Differential Change with Temperature DC Current Gain Differential 5 1 5 10 0.5 TYP. MAX. TYP. MAX. MAX. MAX. TYP. UNITS mV mV V/C nA nA/C % CONDITIONS IC = 10 A IC = 10 A TA = -55C IC = 10A IC = 10A TA = -55C IC = 10A to to VCE = 5V VCE = 5V +125C VCE = 5V VCE = 5V +125C VCE = 5V TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 2 34 1 5 8 76 P-DIP 0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.050 234 1 8 5 6 7 SOIC 0.150 (3.81) 0.158 (4.01) 0.100 45 0.046 0.036 45 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 A. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160 * FAX: (510) 353-0261 |
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