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BFT 92
PNP Silicon RF Transistor * For broadband amplifiers up to 2GHz at collector currents up to 20mA * Complementary type: BFR 92P (NPN)
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFT 92 W1s Q62702-F1062 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 2 25 3 mW 200 150 - 65 ... + 150 - 65 ... + 150 360 C mA Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS 78 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
BFT 92
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 50 -
V nA 100 A 10 15 -
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO IEBO hFE
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V
Semiconductor Group
2
Dec-13-1996
BFT 92
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
3.5 5 0.54 0.25 0.77 -
GHz pF 0.8 dB 2 3.2 -
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 11.5 6 13.5 8 -
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-13-1996
BFT 92
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.5354 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 10.983 1.1172 47.577 1.206 1.5939 1.7785 32.171 1.2 2.0779 0 3 V V fF ps V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
98.533 10.297 7.9562 1.5119 0.79082 0.30227 0 0.3 0 0 0.75167
V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
0.90551 12.196 1.2703 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300
fA mA V fF V eV K
0.016123 A 0.019729 A
0.024709 fA
0.013277 mA
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 84 165 0.85 0.51 0.69 0.61 0 0.49 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-13-1996
BFT 92
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
200
TS
150
100
TA
50
0 0 20 40 60 80 100 120 C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
RthJS
K/W
Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
5
Dec-13-1996
BFT 92
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
1.6
6.0 GHz 10V 8V
pF 5.0
Ccb
1.2
fT
4.5 4.0 1.0 3.5 0.8 3.0 2.5 0.6 2.0 0.4 1.5 1.0 0.2 0.5 0.0 0 4 8 12 16 V VR 22 0.0 0 5 10 15 20 mA IC 30 1V 0.7V 3V 2V 5V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
16
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
8.5 10V dB 5V 3V 2V
dB
10V
G
12
8V 5V 3V 2V
G
7.0 6.0 5.0
10
8
1V
4.0 1V 3.0 2.0 0.7V 1.0 0.0
6
0.7V
4
2 0 0 5 10 15 20 mA IC 30
0
5
10
15
20
mA IC
30
Semiconductor Group
6
Dec-13-1996
BFT 92
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
f = Parameter
16
VCE = Parameter, f = 900MHz
28
IC=15mA
dB 0.9GHz
8V dBm 24 3V 2V
G
12 0.9GHz
IP3
22 20 10 18 8 1.8GHz 1.8GHz 16 14 12 4 10 8 2 6 0 0 2 4 6 8 V 12 4 0 4 8 12 16 1V
6
20
V CE
mA IC
28
Power Gain Gma, Gms = f(f)
VCE = Parameter
30
Power Gain |S21|2= f(f)
VCE = Parameter
26
IC=15mA
dB
dB 22
IC=15mA
G
S21
20
20 18 16 14
15
12 10
10
8 6
5
10V 2V 1V 0.7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5
4 2 0 -2 0.0 0.7V 10V 2V GHz f 3.5
0 0.0
0.5
1.0
1.5
2.0
2.5
Semiconductor Group
7
Dec-13-1996

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