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 Power Transistors
2SB1470
Silicon PNP triple diffusion planar type darlington
Unit: mm
(10.0) (6.0) (2.0) (4.0)
For power amplification Complementary to 2SD2222
26.00.5
20.00.5 3.30.2
5.00.3 (3.0)
I Features
* Optimum for 120 W Hi-Fi output * High forward current transfer ratio hFE * Low collector to emitter saturation voltage VCE(sat)
(3.0)
(1.5) 2.00.3 3.00.3 1.00.2 0.60.2 5.450.3 10.90.5 (1.5) 2.70.3 1 2 3
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating -160 -160 -5 -15 -8 150 3.5 150 -55 to +150 C C Unit V V V A A W
20.00.5 (2.5) Solder Dip
(1.5)
1 : Base 2 : Collector 3 : Emitter TOP-3L Package
Internal Connection
C B
Junction temperature Storage temperature
E
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 * Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 Q S VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -160 V, IE = 0 VCE = -160 V, IB = 0 VEB = -5 V, IC = 0 IC = -30 mA, IB = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -7 A IC = -7 A, IB = -7 mA IC = -7 A, IB = -7 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -7 A, IB1 = -7 mA, IB2 = 7 mA, VCC = -50 V 20 1 1.5 1.2 -160 1 000 3 500 20 000 -3 -3 V V MHz s s s Min Typ Max -100 -100 -100 Unit A A A V
3 500 to 10 000 7 000 to 20 000
(2.0)
1
2SB1470
PC T a
200 -8 (1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=3.5W) (1) 120 100 80 60 40 20 (3) 0 0 20 40 60 80 100 120 140 160 -1 (2) 0 0 -2 -4 -6 -0.2mA -8 -10 -12 -14 -16 -0.3mA TC=25C -7 IB=-1.0mA -0.9mA -6 -0.8mA -5 -4 -3 -2 -0.7mA -0.6mA -0.5mA -0.4mA
Power Transistors
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
-100 -30 -10 -3 -1 -0.3 -0.1 TC=25C 25C 125C
VCE(sat) IC
IC/IB=1000
Collector power dissipation PC (W)
180 160 140
Collector current IC (A)
-0.03 -0.01 -0.1 -0.3
-1
-3
-10
-30
-100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-100
hFE IC
105 VCE=-5V 10000
Cob VCB
Collector output capacitance Cob (pF)
IE=0 f=1MHz TC=25C
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000
-30 -10 -3 TC=-25C 25C -1 125C -0.3 -0.1
Forward current transfer ratio hFE
3000 1000 300 100 30 10 3 1 -0.1 -0.3
104
TC=125C 103 -25C
25C
102
-0.03 -0.01 -0.1 -0.3
10 -1 -3 -10 -30 -100 -0.03 -0.1 -0.3 -1 -3 -10
-1
-3
-10
-30
-100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
ton, tstg, tf IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000(-IB1=IB2) VCC=-50V TC=25C -100 -30
Area of safe operation (ASO)
Non repetitive pulse TC=25C ICP
Switching time ton,tstg,tf (s)
10 3 1 0.3 0.1 0.03 0.01 0 -2 -4
Collector current IC (A)
-10 IC -3 -1 -0.3 -0.1 t=10ms DC t=1ms
tstg tf ton
-0.03 -0.01 -1
-6
-8
-10
-3
-10
-30
-100 -300 -1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) t
104 Note: Rth was measured at Ta=25C and under naturalconvection. (1)PT=10Vx0.3A(3W) and without heat sink (2)PT=10Vx1.0A(10W) and with a 100x100x2mm Al heat sink 103
2SB1470
Thermal resistance Rth(t) (C/W)
102 (1) 10
(2)
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR


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