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Composite Transistors
UP01878
Silicon N-channel MOSFET
Unit: mm
(0.30) 0.20 -0.02 4
1.200.05 1.600.05
+0.05
0.100.02
For switching Features
* Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half
5
1
1.000.05 1.600.05
Basic Part Number of Element
* 2SK3539 x 2 elements
Display at No.1 lead
0.550.05
5
(0.20)
2 3 (0.50) (0.50)
5
(0.20)
Parameter Rating of element Drain to source voltage Gate to source voltage Drain current Max drain current Overall Allowable power dissipation * Channel temperature Storage temperature Note) *: Total power dissipation
Symbol VDSS VGSO ID IDP PD Tch Tstg
Rating 50 7 100 200 125 125 -55 to +125
Unit V V mA mA mW C C
FET1
1: Gate (FET1) 2: Source 3: Gate (FET2)
0 to 0.02
Absolute Maximum Ratings Ta = 25C
4: Drain (FET2) 5: Drain (FET1) SMini5-G1 Package
Marking Symbol: AL Internal Connection
5 4
FET2
1
2
3
Electrical Characteristics Ta = 25C 3C
Parameter Drain to source voltage Drain cut-off current Gate cut-off current Gate threshold voltage Drain on-state resistance Symbol VDSS IDSS IGSS Vth RDS(on) Yfs Ciss Coss Crss ton toff VDD = 3 V, VGS = 0 V to 3 V, RL = 470 VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Conditions ID = 10 A, VGS = 0 VDS = 50 V, VGS = 0 VGS = 7 V, VDS = 0 ID = 1 A, VDS = 3 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time * Turn-off time
*
Min 50
Typ
Max
Unit V A A V mS pF pF pF ns ns
1.0 5 0.9 1.2 8 6 20 60 12 7 3 200 200 1.5 15 12
ID = 10 mA, VDS = 4.0 V VDS = 3 V, VGS = 0 V, f = 1 MHz
Note) *: Refer to ton , toff test circuit (next page)
0.10 max
Publication date: July 2002
SJJ00265AED
1
UP01878
ton , toff Test circuit Vout 470 Vin VDD = 3 V Vout 10% 10% 90% ton toff
90%
50
PD Ta
140
70 60
100 F
VGS = 3.0 V
ID VDS
Ta = 25C VGS = 2.0 V 1.9 V
ID VGS
250 VDS = 3 V Ta = -25C 25C 75C 150
Allowable power dissipation PD (mW)
120 100 80 60 40 20 0 0 20 40 60 80 100 120 140
200
Drain current ID (mA)
50 40 30 20 10 0
1.8 V
Drain current ID (mA)
1.7 V 1.6 V 1.5 V
100
50
0
2
4
6
8
10
12
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Yfs VGS
0.18
60
RDS(on) VGS
ID = 10 mA
10
VIN IO
VO = 5 V Ta = 25C
Forward transfer admittance |Yfs | (mS)
Drain on-state resistance RDS(on) ()
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0
VDS = 3 V f = 1 MHz Ta = 25C
50
40
Input voltage VIN (V)
Ta = 75C 25C -25C 0 1 2 3 4 5 6 7
30
1
20
10
0.5
1.0
1.5
2.0
2.5
3.0
0
0.1
1
10
100
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
Output current IO (mA)
2
SJJ00265AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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