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| TIP31, TIP31A ... C NPN Version 2004-06-29 General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Collector current - Kollektorstrom Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert 1=B 2=C 3=E 3A TO-220AB 2.2 g Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings (TA = 25C) TIP31 Collector-Emitter-voltage Collector-Emitter-voltage Emitter-Base-voltage without cooling - ohne Kuhlung with cooling - mit Kuhlung Grenzwerte (TA = 25C) TIP31A 60 V 60 V 5V 2 W 1) 40 W 3 A (dc) 5A 1A 150C - 65...+ 150C TIP31B 80 V 80 V TIP31C 100 V 100 V VCE0 VEB0 Ptot 40 V 40 V B open C open B shorted VCES Power dissipation - Verlustleistung TC =25C Ptot IC ICM IB Tj TS Collector current - Kollektorstrom Peak Collector current Kollektor-Spitzenstrom Base current - Basisstrom Junction temp. - Sperrschichttemp. Storage temp. - Lagerungstemperatur Characteristics, Tj = 25C Min. Collector saturation volt. - Kollektor-Sattigungsspannung IC = 3 A, IB = 375 mA Base-Emitter voltage - Basis-Emitter-Spannung VCE = 4 V, IC = 3 A VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A 1 Kennwerte, Tj = 25C Typ. - - - - Max. 1.2 V 1.8 - 50 VCEsat - VBEon hFE hFE - - 25 10 DC current gain - Kollektor-Basis-Stromverhaltnis ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 26 General Purpose Transistors TIP31, TIP31A ... C Characteristics (Tj = 25C) Min. Collector-Emitter cutoff current - Kollektorreststrom VCE = 30 V VCE = 60 V VCE = rated VCE0 Small signal current gain Kleinsignal-Stromverstarkung Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 0.5 A, f = 1 MHz Switching times - Schaltzeiten turn-on time turn-off time ICon = 1 A, IBon = - IBoff = 100 mA ton toff - - fT 3 MHz TIP31 TIP31A TIP31B TIP31C ICE0 ICE0 ICE0 ICE0 ICES - - - - - Kennwerte (Tj = 25C) Typ. - - - - - Max. 300 nA 300 nA 300 nA 300 nA 200 nA h-Parameters at VCE = 10 V, IC = 0.5 A, f = 1 kHz hfe 20 - - - 300 ns 1 s - - - 62 K/W 1) 3 K/W 9 10% lb.in. 1 10% Nm TIP32, TIP32A TIP32B, TIP32C Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to case - Sperrschicht zu Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren RthA RthC M4 1 ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschludrahte in 5 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 27 |
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