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DATA SHEET
GaAs MES FET
NE76084
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
* Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz * Gate length: Lg = 0.3 m * Gate width : Wg = 280 m
L 1.78 0.2 1 L
0.5 TYP.
PACKAGE DIMENSIONS (Unit: mm)
ORDERING INFORMATION
PART NUMBER NE76084-SL NE76084-T1 SUPPLYING FORM STICK Tape & reel 1000 pcs./reel Tape & reel 5000 pcs./reel
1.78 0.2
LEAD LENGTH L = 1.7 mm MIN. L = 1.0 0.2 mm L = 1.0 0.2 mm
MARKING E
E
2 L 3 4 L
NE76084-T1A
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS VGD ID Ptot Tch Tstg 5.0 -3.0 -5.0 IDSS 240 175 -65 to +175 V V mA mW C C
1. Source 2. Drain 3. Source 4. Gate
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PART NUMBER PACKAGE CODE CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 8.0 15 -0.5 30 30 -0.8 40 1.6 9.0 MIN. NE76084 84 TYP. MAX. 10 50 -3.0 70 1.8 8.0 15 -0.5 30 30 -0.8 40 1.8 9.0 MIN. NE76084-2.4 84 TYP. MAX. 10 50 -3.0 70 2.4 UNIT TEST CONDITIONS
A
mA V mS dB dB
VGS = -4 V VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 100 A VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 10 mA f = 12 GHz
Document No. P11843EJ2V0DS00 (2nd edition) (Previous No. TC-2259) Date Published August 1996 P Printed in Japan
(c)
0.1
V
1.7 MAX.
1989
NE76084
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 50 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Ptot-Total Power Dissipation-mW
40 200
VGS = 0 V
ID-Drain Current-mA
30 -0.2 V 20 -0.4 V 10 -0.6 V
100
0
50 100 150 TA-Ambient Temperature-C
200
0
1
2 3 4 VDS-Drain to Source Voltage-V
5
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 24 VDS = 3 V 40
TYPICAL GAIN vs. FREQUENCY VDS = 3 V ID = 10 mA 20 MSG. 16 MAG. S21s 8
2
30
MAG.-Maximum Available Gain-dB MSG.-Maximum Stable Gain-dB S21s2-Forward Insertion Gain-dB
ID-Drain Current-mA
20
12
10
0 0 -2.0 -1.0 VGS-Gate to Source Voltage-V 0
1
2
4
6
8 10
20
f-Frequency-GHz
Gain Calculations MSG. = |S21| |S12| |S21| |S12| (K K 2 - 1) K= 1 + || 2 - |S11| 2 - |S22| 2 2 |S12| |S21|
MAG. =
= S11*S22 - S21*S12
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NE76084
NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20
Ga-Associated Gain-dB
NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 2.5 VDS = 3 V f = 12 GHz
Ga-Associated Gain-dB
15
NF-Noise Figure-dB
3.0 Ga
16
NF-Noise Figure-dB
2.0
Ga
10
2.0
12
NF 1.5 5
1.0 NF 0 1 2 4 6 8 10 14 f-Frequency-GHz
8
4 20 30
0
5
10
15
20
25
ID-Drain Current-mA
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NE76084
S-PARAMETERS VDS = 3 V, ID = 10 mA START 500 MHz, STOP 18 GHz, STEP 500 MHz
S11 S12 Marker 1: 500 MHz 2: 4 GHz 3: 8 GHz 4: 12 GHz 5: 16 GHz 6: 18 GHz
1.0 0.5 2 135
90
45
6 5 0 4 1 6 3 -0.5 -1.0 Rmax. = 1 2 -2 -90 Rmax. = 0.2 0.5 1.0 180 1 2 3 4 5 0
-135
-45
S21 90 0.5 135 2 3 5 1 180 5 6 4 0 0 0.5 4 45 6
S22
1.0 2
1.0 1 3 2
-135
-45 -0.5 -90 Rmax. = 5.0 -1.0 Rmax. = 1 -2
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NE76084
S-PARAMETERS VDS = 3 V, ID = 10 mA
FREQUENCY MHz 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 S11 MAG. 0.997 0.989 0.977 0.960 0.942 0.923 0.902 0.879 0.857 0.834 0.812 0.792 0.773 0.756 0.742 0.728 0.714 0.700 0.687 0.673 0.658 0.644 0.630 0.617 0.605 0.592 0.580 0.566 0.552 0.537 0.519 0.500 0.480 0.461 0.441 0.422 ANG. (deg.) -9.4 -18.5 -27.6 -36.4 -44.9 -53.4 -61.7 -69.8 -77.6 -85.3 -92.8 -99.9 -106.6 -113.0 -119.1 -124.8 -130.3 -135.8 -141.1 -146.6 -151.9 -157.4 -162.9 -168.4 -173.7 -179.1 175.6 170.3 164.7 158.9 152.7 146.2 139.0 131.4 123.4 114.4 MAG. 2.917 2.890 2.853 2.802 2.749 2.694 2.638 2.571 2.507 2.437 2.371 2.299 2.231 2.167 2.106 2.054 2.004 1.963 1.927 1.891 1.858 1.826 1.792 1.765 1.736 1.710 1.688 1.671 1.658 1.642 1.634 1.617 1.607 1.596 1.579 1.566 S21 ANG. (deg.) 170.5 161.3 152.2 143.4 134.8 126.3 118.0 109.8 101.8 94.1 86.4 79.1 71.9 65.0 58.4 51.9 45.5 39.2 33.0 26.7 20.5 14.3 8.1 2.1 -4.0 -10.0 -16.0 -22.2 -28.2 -34.6 -41.0 -47.5 -54.2 -61.0 -67.9 -75.1 MAG. 0.012 0.023 0.034 0.044 0.053 0.062 0.069 0.075 0.081 0.085 0.089 0.092 0.094 0.095 0.096 0.097 0.098 0.099 0.100 0.102 0.102 0.104 0.105 0.107 0.108 0.110 0.113 0.116 0.119 0.123 0.126 0.130 0.134 0.138 0.142 0.145 S12 ANG. (deg.) 83.2 76.9 70.6 64.6 58.9 53.3 47.9 42.8 38.0 33.5 29.2 25.0 21.5 18.2 15.2 12.7 10.3 8.2 6.3 4.3 2.2 0.5 -1.3 -3.0 -4.6 -6.6 -8.5 -10.6 -13.3 -15.9 -19.1 -22.6 -26.4 -30.9 -35.5 -40.6 MAG. 0.620 0.615 0.607 0.596 0.584 0.571 0.556 0.541 0.524 0.509 0.493 0.482 0.468 0.460 0.452 0.446 0.443 0.438 0.438 0.435 0.437 0.436 0.438 0.441 0.446 0.456 0.461 0.473 0.480 0.494 0.505 0.514 0.526 0.536 0.551 0.561 S22 ANG. (deg.) -7.0 -13.9 -20.8 -27.4 -34.1 -40.8 -47.2 -54.0 -60.4 -67.0 -73.8 -80.5 -87.4 -93.9 -100.6 -107.1 -113.7 -119.7 -126.2 -133.0 -139.7 -146.8 -153.5 -160.4 -167.3 -173.8 -180.0 174.2 167.8 162.3 155.5 149.9 143.4 136.9 130.9 124.2
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NE76084
AMP. PARAMETERS VDS = 3 V, ID = 10 mA
FREQUENCY MHz 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 16500 17000 17500 18000 GUmax. dB 33.02 27.83 24.50 21.87 20.08 18.61 17.32 16.14 15.13 14.20 13.39 12.66 12.01 11.44 10.93 10.48 10.09 9.71 9.40 9.06 8.76 8.47 8.19 7.96 7.73 7.55 7.37 7.24 7.11 7.00 6.91 6.76 6.67 6.57 6.48 6.39 GAmax. dB |S21| 2 dB 9.30 9.22 9.11 8.95 8.78 8.61 8.42 8.20 7.98 7.74 7.50 7.23 6.97 6.72 6.47 6.25 6.04 5.86 5.70 5.53 5.38 5.23 5.07 4.94 4.79 4.66 4.55 4.46 4.39 4.31 4.27 4.17 4.12 4.06 3.97 3.90 |S12| 2 dB -38.67 -32.75 -29.44 -27.17 -25.50 -24.22 -23.24 -22.47 -21.87 -21.38 -21.02 -20.76 -20.55 -20.42 -20.33 -20.25 -20.16 -20.08 -19.99 -19.85 -19.80 -19.68 -19.58 -19.45 -19.32 -19.16 -18.96 -18.75 -18.50 -18.21 -17.98 -17.70 -17.43 -17.18 -16.98 -16.78 K 0.08 0.13 0.19 0.25 0.30 0.35 0.40 0.46 0.52 0.57 0.63 0.69 0.75 0.80 0.85 0.90 0.94 0.99 1.02 1.06 1.10 1.13 1.17 1.19 1.21 1.21 1.22 1.21 1.20 1.17 1.16 1.16 1.14 1.13 1.12 1.12 Delay ns 0.051 0.051 0.051 0.049 0.048 0.047 0.046 0.046 0.044 0.043 0.043 0.041 0.040 0.038 0.037 0.036 0.035 0.035 0.034 0.035 0.034 0.034 0.034 0.033 0.034 0.033 0.033 0.034 0.034 0.035 0.036 0.036 0.037 0.038 0.038 0.040 Mason's U dB 35.846 32.671 30.124 27.520 26.456 25.794 24.722 23.833 23.043 22.182 21.487 20.671 20.221 19.654 19.247 18.929 18.779 18.378 18.331 17.972 17.332 16.850 16.224 15.764 15.275 15.008 14.639 14.410 14.165 14.046 13.754 13.255 12.958 12.636 12.338 11.963 G1 dB 21.62 16.55 13.39 11.02 9.48 8.29 7.30 6.44 5.75 5.16 4.68 4.28 3.96 3.69 3.47 3.27 3.10 2.93 2.77 2.62 2.47 2.33 2.20 2.08 1.98 1.87 1.78 1.68 1.58 1.48 1.36 1.25 1.14 1.04 0.94 0.85 G2 dB 2.10 2.06 2.00 1.91 1.81 1.71 1.60 1.50 1.39 1.30 1.21 1.15 1.08 1.03 0.99 0.96 0.95 0.93 0.93 0.91 0.92 0.91 0.92 0.94 0.96 1.01 1.04 1.10 1.14 1.21 1.28 1.33 1.41 1.47 1.57 1.64
11.93 11.21 10.66 10.23 9.84 9.56 9.29 9.13 8.95 8.85 8.76 8.73 8.67 8.52 8.47 8.39 8.34 8.24
6
NE76084
NOISE PARAMETERS
1 0.6 2 VDS = 3 V ID = 10 mA
2 GHz 0.2 5
0.2
0.6
1
0
2
-0.2
18 GHz
-5
-2 -0.6 -1
Start 2 GHz, Stop 18 GHz, Step 2 GHz VDS = 3 V, ID = 10 mA
Freq. (dB) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFMIN. (dB) 0.55 0.62 0.81 1.10 1.25 1.60 1.90 2.25 2.75 Ga (dB) 16.9 14.0 12.3 11.0 10.1 9.0 8.1 7.6 7.0 opt. MAG. 0.88 0.72 0.60 0.52 0.46 0.45 0.45 0.45 0.48 ANG. (deg.) 31 69 107 148 -175 -138 -104 -78 -52 0.51 0.46 0.37 0.32 0.26 0.21 0.17 0.11 0.10
Rn/50
7
NE76084
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions.

For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E).
Soldering process Infrared ray reflow Soldering conditions Peak package's surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 1, Exposure limit*: None Terminal temperature: 230 C or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol IR30-00
Partial heating method
* Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Note Do not apply more than a single process at once, except for "Partial heating method".
PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky barrier gate.
Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the Japanese low concerned. Keep the law concerned and so on, especially in case of removal.
8
NE76084
[MEMO]
9
NE76084
[MEMO]
10
NE76084
[MEMO]
11
NE76084
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5
12

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