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MJD47
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
s s s
s
SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICAL SIMILAR TO TIP47
APPLICATIONS SWITCH MODE POWER SUPPLIES s AUDIO AMPLIFIERS s GENERAL PURPOSE SWITCHING AND AMPLIFIER
s
3 1
DPAK TO-252 (Suffix "T4")
DESCRIPTION The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB IB M P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature
o
Value 350 250 5 1 2 0.6 1.2 15 -65 to 150 150
Unit V V V A A A A W
o o
C C 1/6
January 1995
MJD47
THERMAL DATA
R thj-cas e Rthj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 8.33 100
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CE S I CEO IE BO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 350 V V CE = 150 V V EB = 5 V I C = 30 mA IC = 1 A IC = 1 A I C = 0.3 A IC = 1 A I C = 200 mA I C = 0.2 A IB = 0.2 A 1 VCE = 10 V VC E = 10 V V CE = 10 V V CE = 10 V f=2MHz VC E = 10 V f=1kHz 30 10 10 25 1.5 150 MHz V 250 Min. Typ. Max. 0.1 0.2 1 Unit mA mA mA V V
V CEO(sus) Collector-Emitter Sustaining Voltage V CE (sat) V B E(on) h FE fT hfe Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain Transition Frequency Small Signal Current Gain
Pulsed: Pulse durati on = 300 s, duty cycle 1.5 %
Safe Operating Areas
Derating Curves
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MJD47
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
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MJD47
Switching Time Inductive Load
Switching Time Inductive Load
Switching Time Inductive Load
Switching Time Inductive Load
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MJD47
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A" B
=
=
3
B2
=
=
L4
1
=
G
E
2
=
A2
0068772-B
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MJD47
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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