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| PD - 91683A PRELIMINARY IRG4PSC71K Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR Features * Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins * High abort circuit rating IGBTs, optimized for motorcontrol * Minimum switching losses combined with low conduction losses * Tightest parameter distribution * Creepage distance increased to 5.35mm VCES = 600V G E VCE(on) typ. = 1.83V @VGE = 15V, IC = 60A n-channel Benefits * Highest current rating IGBT * Maximum power density, twice the power handling of the TO-247, less space than TO-264 SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tSC VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 85 60 200 200 10 20 180 350 140 -55 to + 150 300 (0.063 in. (1.6mm from case ) Units V A s V mJ W C Thermal Resistance\ Mechanical Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. --- --- --- 20.0(2.0) --- Typ. --- 0.24 --- --- 6 (0.21) Max. 0.36 --- 38 --- --- Units C/W N (kgf) g (oz) www.irf.com 1 5/11/99 IRG4PSC71K Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- Emitter-to-Collector Breakdown Voltage 18 --- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.5 --- 1.83 VCE(ON) Collector-to-Emitter Saturation Voltage --- 2.20 --- 1.81 VGE(th) Gate Threshold Voltage 3.0 --- VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -8.0 gfe Forward Transconductance 31 46 --- --- ICES Zero Gate Voltage Collector Current --- --- --- --- IGES Gate-to-Emitter Leakage Current --- --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V VGE = 0V, IC = 1.0A --- V/C VGE = 0V, IC = 10mA 2.3 IC = 60A VGE = 15V --- IC = 100A See Fig.2, 5 V --- IC = 60A , TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 1.5mA --- S VCE = 50V, IC = 60A 500 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 5.0 mA VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. 340 44 160 34 54 251 89 0.79 1.98 2.77 -- 37 56 356 177 5.5 13 6900 730 190 Max. Units Conditions 510 IC = 60A 66 nC VCC = 400V See Fig.8 240 VGE = 15V -- -- TJ = 25C ns 377 IC = 60A, VCC = 480V 133 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 3.1 See Fig. 9,10,18 -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, See Fig. 10,11,18 -- IC = 60A, VCC = 480V ns -- VGE = 15V, RG = 5.0, -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Current limited by the package, (Die current = 100A) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PSC71K 120 For both: Triangular wave: 90 L oad C urrent (A) Duty cycle: 50% T J = 125C T sink= 90C Gate drive as specified Power Dissipation = 58W Clamp voltage: 80% of rated Square wave: 60 60% of rated voltage 30 Ideal diodes 0 0.1 1 10 A 100 f, Freq uen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 Ic , Collector-to-Emitter Current (A) 100 I C , Collector-to-Emitter Current (A) 100 TJ = 1 5 0 C TJ = 150 C 10 TJ = 2 5 C 10 TJ = 25 C 1 0 1 2 VG E = 15 V 2 0 s P U L SE W ID TH A 3 4 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 VC E , C olle ctor-to-Em itter Vo ltag e (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PSC71K 100 3.0 LIM ITED BY PA C KA G E Maximum DC Collector Current (A) VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH I C = 120 A 80 60 2.0 I C = 60 A 40 I C = 30 A 20 V G E = 15 V 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem p era ture (C ) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (ZthJC) D = 0 .50 0.1 0 .20 0 .1 0 0.05 0.0 2 0.01 P DM SIN G L E PU L SE (T HE R M A L R ES PO N SE ) t 1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 A 100 0.001 0.01 0.1 1 10 t 1 , R e ctang ular Pulse D uratio n (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSC71K 10000 8000 VGE , Gate-to-Emitter Voltage (V) VGE = Cies = Cres = Coes = 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc 20 VCC = 400V I C = 60A 16 C, Capacitance (pF) Cies 6000 12 4000 8 2000 Coes Cres 4 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 12.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 10.0 I C = 60A 8.0 100 RG = 5.0Ohm VGE = 15V VCC = 480V IC = 120 A 10 IC = 60 A IC = 30 A 1 6.0 4.0 2.0 0.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PSC71K 20 Total Switching Losses (mJ) 15 I C , Collector Current (A) RG TJ VCC VGE = 5.0Ohm = 150 C = 480V = 15V 1000 VGE = 20V T J = 125 oC 10 100 5 0 20 40 60 80 100 120 SAFE OPERATING AREA 10 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PSC71K L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 9 0% 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PSC71K Case Outline and Dimensions -- Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 8 www.irf.com |
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