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| Datasheet File OCR Text: |
| BUZ45 Semiconductor Data Sheet October 1998 File Number 2257.1 9.6A, 500V, 0.600 Ohm, N-Channel Power MOSFET Features * 9.6A, 500V [ /Title IThis is an N-Channel enhancement mode silicon gate * rDS(ON) = 0.600 (BUZ45) power field effect transistor designed for applications such * SOA is Power Dissipation Limited /Subject as switching regulators, switching converters, motor drivers, * Nanosecond Switching Speeds 9.6A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 00V, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. .600 * High Input Impedance hm, N- Formerly developmental type TA17435. * Majority Carrier Device hannel ower Ordering Information Symbol PART NUMBER PACKAGE BRAND OSD BUZ45 TO-204AA BUZ45 ET) /Author NOTE: When ordering, use the entire part number. G ) /KeyS ords Harris emionduc- Packaging or, NJEDEC TO-204AA hannel ower DRAIN OS(FLANGE) ET. O04AA) /Creator ) SOURCE (PIN 2) /DOCIN GATE (PIN 1) O pdfark /Pageode /UseOutines /DOCIEW dfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 |
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