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PD - 94102 IRFIZ24V Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l l HEXFET(R) Power MOSFET D VDSS = 60V RDS(on) = 0.060 G S Advanced HEXFET (R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. ID = 14A TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 14 10 68 26 0.18 20 17 4.4 4.2 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Typ. --- --- Max. 5.7 62 Units C/W www.irf.com 1 03/12/01 IRFIZ24V Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 60 --- --- 2.0 7.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.06 --- --- --- --- --- --- --- --- --- --- 7.6 46 21 24 4.5 7.5 590 140 23 140 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 60 m VGS = 10V, ID = 10A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 10A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 23 ID = 17A 7.7 nC VDS = 48V 6.2 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 17A ns --- RG = 18 --- VGS = 10V, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 43 mJ IAS = 17A , L = 300H D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 14 --- --- showing the A G integral reverse 68 --- --- S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 17A , VGS = 0V --- 53 79 ns TJ = 25C, IF = 17A --- 90 130 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. Starting TJ = 25C, L = 300H RG = 25, IAS = 14A. (See Figure 12) ISD 14A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C This is a calculated value limited to TJ = 175C . ID = 17A is copied from TO-220 device. 2 www.irf.com IRFIZ24V 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 4.5V 1 4.5V 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 ID = 17A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C 2.5 2.0 10 1.5 1.0 0.5 1 4 6 8 V DS = 25V 20s PULSE WIDTH 10 12 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFIZ24V 1000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd ID = 17A VDS = 48V VDS = 30V VDS = 12V VGS , Gate-to-Source Voltage (V) 800 16 C, Capacitance(pF) Ciss 600 Coss = C + Cgd ds 12 Coss 400 8 200 Crss 4 0 1 10 100 0 0 4 8 12 FOR TEST CIRCUIT SEE FIGURE 13 16 20 24 VDS, Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS (on) ISD , Reverse Drain Current (A) 10 ID, Drain-to-Source Current (A) TJ = 175 C 100 10 100sec 1msec 1 TJ = 25 C 1 Tc = 25C Tj = 175C Single Pulse 1 10 10msec 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 0.1 VSD ,Source-to-Drain Voltage (V) 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFIZ24V 15 VDS 12 RD VGS RG ID , Drain Current (A) D.U.T. + -VDD 9 VGS Pulse Width 1 s Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 3 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 1 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFIZ24V 80 1 5V EAS , Single Pulse Avalanche Energy (mJ) VD S L D R IV E R 60 TOP BOTTOM ID 6.9A 12A 17A RG 20V D .U .T IA S tp 0 .01 + - VD D A 40 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFIZ24V Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRFIZ24V Package Outline TO-220 Fullpak Outline Dimensions are shown in millimeters (inches) 1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) o 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A 3 .7 0 (.14 5 ) 3 .2 0 (.12 6 ) 4 .8 0 ( .1 89 ) 4 .6 0 ( .1 81 ) 2 .80 (.1 10 ) 2 .60 (.1 02 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E 7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5) M IN. 1 2 3 NO T E S : 1 D IME N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N TR O L L ING D IM E N S IO N: IN C H . 3.3 0 (.13 0 ) 3.1 0 (.12 2 ) -B1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D A 1 .4 0 (.0 5 5) 3X 1 .0 5 (.0 4 2) 2 .54 (.1 0 0) 2X 0 .9 0 (.0 3 5 ) 3X 0 .7 0 (.0 2 8 ) 0 .2 5 (.0 1 0) M AM B 3X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 ) B 2 .85 (.1 1 2 ) 2 .65 (.1 0 4 ) M IN IM U M C R E E P A G E D IS T A NC E B E T W E E N A -B -C -D = 4.8 0 (.1 89 ) Part Marking Information TO-220 Fullpak E X AM P LE : TH IS IS A N IRF I8 40G W ITH A S S E M B LY LO T CO D E E 40 1 A INT E RN A TIO N A L R E CT IF IE R LO G O A S S E M B LY L O T CO D E P A RT NU M B ER IR FI8 40G E 40 1 92 45 DA T E CO D E (YYW W ) YY = YE A R W W = W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/01 8 www.irf.com |
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