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| SUP/SUB75N08-09L New Product Vishay Siliconix N-Channel 75-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.009 @ VGS = 10 V 0.011 @ VGS = 4.5 V ID (A) "75 a TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N08-09L DS S N-Channel MOSFET Top View SUB75N08-09L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 75 "20 "75a "66 "240 "75 280 250c 3.7 -55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70870 S-60951--Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 (TO-263)d RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB75N08-09L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 120 0.0076 0.009 0.011 0.016 0.021 S W 75 V 1 3 "100 1 50 250 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0 47 W V, 0.47 ID ^ 75 A, VGEN = 10 V RG = 2 5 W A V, 2.5 VDS = 30 V, VGS = 10 V ID = 75 A V V, VGS = 0 V, VDS = 25 V, f = 1 MHz 5600 820 275 121 20 25 11 10 107 22 20 20 ns 200 40 150 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 75 A di/dt = 100 A/ms A, IF = 75 A, VGS = 0 V 1.0 80 4 0.32 75 A 240 1.3 120 9 0.54 V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70870 S-60951--Rev. A, 26-Apr-99 SUP/SUB75N08-09L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8, 7, 6, 5 V 4V 150 I D - Drain Current (A) 200 Vishay Siliconix Transfer Characteristics 200 I D - Drain Current (A) 160 120 100 80 TC = 125_C 40 25_C -55_C 0 50 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 200 TC = -55_C r DS(on) - On-Resistance ( W ) 160 g fs - Transconductance (S) 25_C 120 0.010 0.012 On-Resistance vs. Drain Current VGS = 4.5 V VGS = 10 V 0.008 125_C 0.006 80 0.004 40 0.002 0 0 20 40 60 80 100 0 0 20 40 60 80 100 120 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 9000 10 Gate Charge Ciss V GS - Gate-to-Source Voltage (V) 7500 C - Capacitance (pF) 8 VGS = 30 V ID = 75 A 6000 6 4500 4 3000 Coss 1500 Crss 2 0 0 15 30 45 60 75 0 0 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Document Number: 70870 S-60951--Rev. A, 26-Apr-99 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB75N08-09L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 75 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 100 Source-Drain Diode Forward Voltage 1.5 1.0 1 0.5 0 -50 0.1 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 300 100 Drain-Source Breakdown Voltage vs. Junction Temperature 100 90 V (BR)DSS (V) IAV (A) @ TJ = 25_C I Dav (a) 80 10 IAV (A) @ TJ = 150_C 70 1 0.0001 0.001 0.01 tin (Sec) 0.1 1 60 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70870 S-60951--Rev. A, 26-Apr-99 SUP/SUB75N08-09L New Product THERMAL RATINGS Maximum Drain Current vs. Case Temperature 90 300 Limited by rDS(on) 100 I D - Drain Current (A) 60 I D - Drain Current (A) 10 ms 100 ms Vishay Siliconix Safe Operating Area 75 45 1 ms 10 10 ms TC = 25_C Single Pulse 100 ms dc 30 15 0 0 25 50 75 100 125 150 175 1 0.1 1 10 100 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) Document Number: 70870 S-60951--Rev. A, 26-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-5 |
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