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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF4391; PMBF4392; PMBF4393 N-channel FETs
Product specification File under Discrete Semiconductors, SC07 April 1995
Philips Semiconductors
Product specification
N-channel FETs
DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film circuits. The transistors are intended for low-power chopper or switching applications in industry. PINNING 1 2 3 = drain = source = gate
PMBF4391; PMBF4392; PMBF4393
handbook, halfpage
3 d s
g
1 Top view
2
MAM385
Note 1. Drain and source are interchangeable. Marking code PMBF4391 = p6J PMBF4392 = p6K PMBF4393 = p6G Fig.1 Simplified outline and symbol, SOT23.
QUICK REFERENCE DATA PMBF4391 Drain-source voltage Drain current VDS = 20 V; VGS = 0 Gate-source cut-off voltage VDS = 20 V; ID = 1 nA Drain-source resistance (on) at f = 1 kHz ID = 0; VGS = 0 Feedback capacitance at f = 1 MHz -VGS = 12 V; VDS = 0 Turn-off time VDD = 10 V; VGS = 0 ID = 12 mA; -VGSM = 12 V ID = 6 mA; -VGSM = 7 V ID = 3 mA; -VGSM = 5 V toff toff toff < < < 20 - - - 35 - - - 50 ns ns ns Crs < 3.5 3.5 3.5 pF Rds on < 30 60 100 -V(P)GS > < 4 10 2 5 0.5 3 V V IDSS > 50 25 5 mA VDS max. 40 PMBF4392 40 PMBF4393 40 V
April 1995
2
Philips Semiconductors
Product specification
N-channel FETs
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage Gate-source voltage Gate current (DC) Total power dissipation up to Tamb = 40 C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient(1) CHARACTERISTICS Tj = 25 C unless otherwise specified Gate-source voltage IG = 1 mA; VDS = 0 Gate-source cut-off current VDS = 0 V; -VGS = 20 V VDS = 0 V; -VGS = 20 V; Tamb = 150 C Drain current VDS = 20 V; VGS = 0 Gate-source breakdown voltage -IG = 1 A; VDS = 0 Gate-source cut-off voltage ID = 1 nA; VDS = 20 V Drain-source voltage (on) ID = 12 mA; VGS = 0 ID = 6 mA; VGS = 0 ID = 3 mA; VGS = 0 Drain-source resistance (on) ID = 0; VGS = 0; f = 1 kHz; Tamb = 25 C Drain cut-off current -VGS = 12 V -VGS = 7 V -VGS = 5 V -VGS = 12 V -VGS = 7 V -VGS = 5 V April 1995 VDS = 20 V; Tamb = 150 C VDS = 20 V IDSX IDSX IDSX IDSX IDSX IDSX 3 < < < < < < rds on < VDSon VDSon VDSon < < < -V(BR)GSS -V(P)GS > > < Rth j-a
(1)
PMBF4391; PMBF4392; PMBF4393
VDS VDGO -VGSO IG Ptot Tstg Tj
max. max. max. max. max. max.
40 V 40 V 40 V 50 mA 250 mW 150 C
-65 to + 150 C
=
430 K/W
VGSon -IGSS -IGSS PMBF4391 IDSS > < 50 150
< < < PMBF4392 25 75
1V 0.1 nA 0.2 A PMBF4393 5 mA 30 mA
40 4 10
40 2 5
40 V 0.5 V 3V
0.4 - 30 0.1 - - 0.2 - -
- 0.4 - - - 0.1 - - 0.2 -
-V -V 0.4 V 100 - nA - nA 0.1 nA - A - A 0.2 A
Philips Semiconductors
Product specification
N-channel FETs
PMBF4391; PMBF4392; PMBF4393
y-parameters (common source) VDS = 20 V; VGS = 0; f = 1 MHz; Tamb = 25 C Input capacitance Feedback capacitance -VGS = 12 V -VGS = 7 V -VGS = 5 V Switching times VDD = 10 V ; VDS = 0 ID -VGS off RL Rise time Turn on time Fall time Turn off time Note 1. Mounted on a ceramic substrate of 8 mm x 10 mm x 0,7 mm. tr ton tf toff = = = < < < < 12 12 750 5 15 15 20 6 7 1550 5 15 20 35 3 mA 5V 3150 5 ns 15 ns 30 ns 50 ns Conditions ID and -VGSoff ; VDS = 0 ; VDS = 0 ; VDS = 0 Crs Crs Crs < < < 3.5 - - - 3.5 - - pF - pF 3.5 pF Cis PMBF4391 < 14 PMBF4392 14 PMBF4393 14 pF
handbook, full pagewidth
VGS = 0 V Vi -VGS off
10%
90% toff tf 90% ton tr
Vo 10%
MBK288
Fig.2 Switching times waveforms.
April 1995
4
Philips Semiconductors
Product specification
N-channel FETs
Pulse generator: tr tf tp
handbook, halfpage
PMBF4391; PMBF4392; PMBF4393
< < = = =
0.5 ns 0.5 ns 100 s 0.01 50
VDD 10 nF
50 10 F RL
1 F
Oscilloscope: Ri
DUT 50
SAMPLING SCOPE 50
MBK289
Fig.3 Test circuit.
handbook, halfpage
300
MDA245
Ptot (mW) 200
100
0 0 40 80 120 200 160 Tamb (C)
Fig.4 Power derating curve.
April 1995
5
Philips Semiconductors
Product specification
N-channel FETs
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
PMBF4391; PMBF4392; PMBF4393
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
April 1995
6
Philips Semiconductors
Product specification
N-channel FETs
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
PMBF4391; PMBF4392; PMBF4393
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1995
7

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