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| MP4412 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2--MOSV inOne) MP4412 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver * * * * * * * 4-V gate drivability Small package by full molding (SIP 12 pins) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25C) Low drain-source ON resistance: RDS (ON) = 0.17 (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IGSS = 10 A (max) (VGS = 16 V) IDSS = 100 A (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25C) Drain power dissipation Ta = 25C (4-device operation) Tc = 25C DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 20 5 20 2.2 4.4 28 180 5 0.22 mJ EART Tch Tstg 0.44 150 -55 to 150 C C Unit V V V A JEDEC JEITA TOSHIBA 2-32C1D Weight: 3.9 g (typ.) W PDT EAS IAR W mJ A Single Pulse avalanche energy (Note 1) Avalanche current Repetitive avalanche energy (Note 2) 4-device operation Channel temperature Storage temperature range 1-device operation EAR Note 1: Condition for avalanche energy (single pulse) measurement VDD = 25 V, starting Tch = 25C, L = 11.6 mH, RG = 25 , IAR = 5 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-01 MP4412 Array Configuration 2 3 5 4 1 6 9 10 12 11 8 7 Thermal Characteristics Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25C) Thermal resistance from channel to case (4-device operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) TL 260 C Rth (ch-c) 4.46 C/W Symbol Max Unit Rth (ch-a) 28.4 C/W 2 2004-07-01 MP4412 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf ton 10 V 0V 50 Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A VDS = 10 V, VGS = 0 V f = 1 MHz Min 100 0.8 2.0 VOUT 25 s 50 Typ. 0.22 0.17 4.5 500 80 190 17 Max 10 100 2.0 0.30 0.23 Unit A A V V S pF pF pF ID = 2.5 A RL = 20 VDD 50 V VIN: tr, tf < 5 ns, duty 1%, tw = 10 s 195 Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd VDD 80 V, VGS = 10 V ID = 5 A 22 15 7 nC nC nC Source-Drain Diode Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V dIDR/dt = 50 A/s Min Typ. 160 0.28 Max 5 20 -1.7 Unit A A V ns C Flyback-Diode Rating and Characteristics (Ta = 25C) Characteristics Forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 100 A IR = 100 A IF = 2 A Test Condition Min 100 Typ. Max 5 0.4 2.3 Unit A A V V 3 2004-07-01 MP4412 Marking MP4412 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 4 2004-07-01 MP4412 ID - VDS 5 Common source Tc = 25C 4 6 8 10 10 5 4 8 8 6 10 5 4 ID - VDS Common source 3.75 3.5 3.25 Tc = 25C (A) ID 3 ID Drain current 3 2.8 2.6 (A) 3.5 6 Drain current 3 4 2.75 2 VGS = 2.5 V 2 2.4 1 VGS = 2.0 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 10 Common source VDS = 10 V 8 2.0 VDS - VGS Common source (V) Tc = 25C 1.6 (A) ID VDS Drain-source voltage 6 1.2 ID = 5 A 0.8 4 100 2 25 Tc = -55C 0 0 Drain current 0.4 2.5 1.3 ) 0 0 1 2 3 4 5 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 50 |Yfs| (S) Common source 30 VDS = 10 V RDS (ON) - ID 1.0 Common source Drain-source ON resistance RDS (ON) () 0.5 0.3 Tc = 25C Forward transfer admittance 10 Tc = -55C 25 VGS = 4 V 10 5 3 100 0.1 0.05 0.03 0.3 1 0.3 0.5 1 3 5 10 30 0.5 1 3 5 10 30 Drain current ID (A) Drain current ID (A) 5 2004-07-01 MP4412 RDS (ON) - Tc RDS (ON) () 0.5 Common source 30 IDR - VDS IDR (A) Drain reverse current 0.4 1.3 0.3 ID = 5 A 2.5 10 5 3 10 3 1 0.5 0.3 1 0.1 0 Common source Tc = 25C VGS = 0, -1 V Drain-source on resistance ID = 5 A 0.2 VGS = 4 V 0.1 10 V 0 -80 -40 0 40 80 120 160 1.3 2.5 -0.4 -0.8 -1.2 -1.6 -2.0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 3000 5 Vth - Tc Common source 1000 Vth (V) (pF) Ciss 500 300 Coss Crss 4 VDS = 10 V ID = 1 mA C Gate threshold voltage 3 Capacitance 100 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25C 10 0.3 0.5 0.1 2 1 1 3 5 10 30 50 100 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Dynamic Input/Output Characteristics 80 Common source ID = 5 A Tc = 25C 20 12 VDD = 80 V 40 8 30 40 16 IDP max Safe Operating Area 100 s* 1 ms* 10 10 ms* ID max (V) VGS (V) VDS 60 VDS ID Drain current (A) Drain-source voltage Gate-source voltage 3 100 ms* 1 20 VGS 4 0 0 8 16 24 32 0 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.1 3 10 30 1 100 300 Total gate charge Qg (nC) Drain-source voltage VDS (V) 6 2004-07-01 MP4412 rth - tw 300 (C/W) Curves should be applied in thermal 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (3) (4) rth 30 Transient thermal resistance (1) 10 (2) 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 0.01 0.1 1 10 Circuit board 100 1000 1 0.3 0.001 Pulse width tw (s) PDT - Ta 8 (1) 1-device operation 200 (2) 2-device operation (3) 3-device operation 6 (4) 4-device operation Attached on a circuit board (4) 4 (3) (2) 2 (1) Circuit board EAS - Tch (W) EAS (mJ) Avalanche energy 160 PDT Total power dissipation 120 80 40 0 0 ) 0 25 40 80 120 160 200 50 75 100 125 150 Ambient temperature Ta (C) Channel temperature Tch (C) Tch - PDT 160 Tch (C) (1) 120 (2) (3) (4) Channel temperature increase Attached on a circuit board 80 15 V -15 V BVDSS IAR VDD VDS Circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 2 4 6 8 10 TEST CIRCUIT Peak IAR = 5 A, RG = 25 VDD = 25 V, L = 11.6 mH TEST WAVE FORM 1 2 B VDSS AS = *L*I * B - VDD 2 VDSS 0 0 Total power dissipation PDT (W) 7 2004-07-01 MP4412 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 8 2004-07-01 |
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