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PD - 9.1488
PRELIMINARY
l l l l l l
IRFI9634G
HEXFET(R) Power MOSFET
D
Advanced Process Technology Dynamic dv/dt Rating 150C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated
VDSS = -250V RDS(on) = 1.0
G
ID = -4.1A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
-4.1 -2.6 -16 35 0.28 20 520 -4.1 3.5 -5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Typ.
--- ---
Max.
3.6 65
Units
C/W
8/8/96
IRFI9634G
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. -250 --- --- -2.0 2.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- -0.27 --- --- --- --- --- --- --- --- --- --- 12 23 34 21 4.5 7.5 680 170 40 12
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 1.0 VGS = -10V, ID = -2.5A -4.0 V VDS = V GS, ID = -250A --- S VDS = -50V, ID = -4.1A -25 VDS = -250V, VGS = 0V A -250 VDS = -200V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 38 ID = -4.1A 8.0 nC VDS = -200V 18 VGS = -10V, See Fig. 6 and 13 --- VDD = -130V --- ID = -4.1A ns --- RG = 12 --- RD = 31, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- -4.1 showing the A G integral reverse --- --- -16 p-n junction diode. S --- --- -6.5 V TJ = 25C, IS = -4.1A, VGS = 0V --- 190 290 ns TJ = 25C, IF = -4.1A --- 1.5 2.2 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD -4.1A, di/dt -640A/s, VDD V(BR)DSS,
TJ 150C
Starting TJ = 25C, L = 62mH
RG = 25, IAS = -4.1A. (See Figure 12)
Pulse width 300s; duty cycle 2%.
IRFI9634G
100
TOP VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V
100
-ID , D rain-to-S ource C urrent (A )
10
-ID , Drain-to-Source Current (A )
20 s P U L S E W ID TH T c = 25 C A
10 100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
10
-4 .5V
1 1
-4.5 V
1 1 10
2 0 s P U LS E W ID TH T C = 1 50 C
100
A
-VD S , D rain-to-S ource V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics, TJ = 25oC
Fig 2. Typical Output Characteristics, TJ = 150oC
100
2.5
R D S (on) , Drain-to-S ource O n Resistance (N orm alized)
I D = -4.1 A
-I D , D rain-to -So urc e C urre nt (A )
2.0
T J = 25 C
10
1.5
T J = 1 5 0 C
1.0
0.5
1 4 5 6 7
V DS = -5 0 V 2 0 s P U L S E W ID TH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
VG S = -1 0V
100 120
140 160
A
-VG S , Ga te -to-Source Volta ge (V)
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI9634G
1200
1000
-V G S , G ate-to-S ource V oltage (V )
V GS C is s C rs s C o ss
= = = =
0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd
20
I D = -4 .1 A
16
V D S = -20 0V V D S = -12 5V V D S = -50 V
C , Capacitance (pF)
800
C iss
12
600
C oss
400
8
200
C rss
4
0 1 10 100
A
0 0 10 20
FO R TE S T CIR C U IT S E E FIG U R E 1 3
30 40
A
-VD S , D rain-to-S ourc e V oltage (V )
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-IS D , R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R D S (o n)
10
-I D , D rain C urrent (A )
10 100 s
T J = 1 50 C T J = 2 5 C
1
1m s 1 10m s
0.1 1.0 2.0 3.0 4.0
V G S = 0V
A
0.1 10
T C = 25 C T J = 15 0C S ing le P u lse
100
5.0
A
1000
-VS D , S ourc e-to-D rain V oltage (V )
-VD S , D rain-to-S ourc e V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI9634G
5.0
VDS
4.0
RD
VGS RG
-ID , D rain C urrent (A m ps )
D.U.T.
+
3.0
-10V
Pulse Width 1 s Duty Factor 0.1 % 2.0
Fig 10a. Switching Time Test Circuit
1.0
td(on)
tr
t d(off)
tf
VGS
0.0 25 50 75 100 125
A
150
10%
TC , C as e Tem perature (C )
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Therm al R espon se (Z thJC )
D = 0 .5 0 1 0 .2 0 0 .1 0 0 .0 5 0.1 0 .02 0 .01
N o te s : 1 . D u ty f ac t or D = t
PD M
t
1 t2
S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 0.01 0.00001
1
/t
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n g u la r P u lse D u ra tio n (se c )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
VDD
A
10
IRFI9634G
E A S , S ingle Pulse Avalanc he E nergy (m J)
VDS L 600
TO P
500
RG
D .U .T IA S D R IV E R
0 .0 1
VD D A
BOTTOM
ID -4 .1 A -5.2 A -8 .2A
-2 0 V tp
400
300
15V
200
Fig 12a. Unclamped Inductive Test Circuit
100
0 25 50 75 100 125
A
150
IAS
S tarting T J , J unc tion T em perature (C )
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
QGS
QGD
D.U.T.
-
-10V
VDS
IRFI9634G
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
+
-
+
RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D= P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS
IRFI9634G
Package Outline
TO-220 Fullpak Outline Dimensions are shown in millimeters (inches)
1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) o 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) 2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E
7 .10 (.2 8 0 ) 6 .70 (.2 6 3 )
1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 )
1 .1 5 (.0 4 5 ) M IN. 1 2 3
N O TE S : 1 D IM E N S IO N ING & T O L E R A N C ING P E R A N S I Y 1 4 .5 M , 1 9 8 2 2 C O N T R O L L IN G D IM E N S ION : IN C H .
3.3 0 (.1 30 ) 3.1 0 (.1 22 ) -B1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C D
A 3X 1 .4 0 (.0 5 5) 1 .0 5 (.0 4 2) 0 .9 0 (.0 35 ) 3 X 0 .7 0 (.0 28 ) 0 .2 5 (.0 1 0 ) 2 .5 4 (.1 0 0 ) 2X M AM B 3X 0.4 8 (.0 1 9 ) 0.4 4 (.0 1 7 )
B
2 .8 5 (.1 1 2 ) 2 .6 5 (.1 0 4 )
M IN IM U M C R E E P A G E D IS T A NC E B E TW E E N A -B -C -D = 4.8 0 (.1 8 9 )
Part Marking Information
TO-220 Fullpak
E X AE X A M P: LE : IS IS A N AIR F1 0FI840 G MPLE TH TH IS IS N IR 1 0 W ITW ITH S E M B L Y LY H A S AS S E M B L O TLO T D E DE 1E 401 C O CO 9 B M
A
IN TE R N A TIO N A L IN TE R N AT IO NA L R E C TIF IE R IR FF I81 0 RE C TIF IE R IR 10 40G LOGO 9246 LOGO 9B 4 01 1 M 5 E 9 24 ASSEMBLY Y A S S EM BL L O T T C O D DE LO CO E
PA RT NU M B ERA P AR T NU M B ER
D A TE C O D E (Y Y W E ) D E DA T W CO Y(Y YW Y E)A R Y=W WYY = YE E E K W = W AR W W = W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/96

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