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Bulletin I0308J 11/01 IR30CDR..L SERIES HIGH POWER RECTIFIER DIODES Junction Size: VRRM Class: Passivation Process: 30 mm Diameter 400 to 1000 V Diffused Junction Major Ratings and Characteristics Parameters VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range Units 1.25 V 400 to 1000 V Test Conditions T J = 25C, IF = 1000 A T J = 150C, I RRM = 20 mA Mechanical Characteristics Nominal Back Metal Composition Nominal Front Metal Composition Chip Dimensions Recommended Storage Environment Al - Ni - Au Nickel plate Molibdenum disc 30 mm diameter (see drawing) Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR30CDR..L Series Bulletin I0308J 11/01 Ordering Information Table Device Code IR 1 1 2 3 4 5 6 7 International Rectifier device Chip Dimension in Millimeters 30 2 C 3 D 4 R 5 10 6 L 7 Device identifier between chip with same diameter Type of Device: D = Standard Recovery Diode Passivation: R = Rubber for all junctions Voltage code: Code x 100 = VRRM Metallization: L = Nickel plate Molibdenum disc (Anode) Al - Ni - Au (Cathode) Available Class 04 = 400 V 08 = 800 V 10 = 1000 V Outline Table 24.8 (0.98) DIA. 1.6 / 1.9 (0.06 / 0.07) 1.3 / 1.6 (0.05 / 0.06) 29.7 (1.17) DIA. All dimensions are in millimeters (inches) 2 www.irf.com IR30CDR..L Series Bulletin I0308J 11/01 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/01 www.irf.com 3 |
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