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| HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Data Sheet December 2001 13A, 1200V, NPT Series N-Channel IGBT The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49313. Features * 13A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 360ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Avalanche Rated * Temperature Compensating SABERTM Model Thermal Impedance SPICE Model www.fairchildsemi.com * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER HGTP2N120CN HGTD2N120CNS HGT1S2N120CNS PACKAGE TO-220AB TO-252AA TO-263AB BRAND 2N120CN 2N120C 2N120CN Packaging JEDEC TO-220AB E COLLECTOR (FLANGE) C G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB and TO-252AA variant in Tape and Reel, e.g., HGT1S2N120CNS9A. Symbol C JEDEC TO-252AA COLLECTOR (FLANGE) G G E E JEDEC TO-263AB COLLECTOR (FLANGE) G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 (c)2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTD2N120CNS HGTP2N120CN, HGT1S2N120CNS 1200 13 7 20 20 30 13A at 1200V 104 0.83 18 -55 to 150 300 260 8 Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 3) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC UNITS V A A A V V W W/oC mJ oC oC oC s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 3A, L = 4mH. 3. VCE(PK) = 840V, TJ = 125oC, RG = 51 . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC MIN 1200 15 6.4 13 TYP 100 2.05 2.75 6.7 10.2 30 36 MAX 100 1.0 2.40 3.50 250 36 43 UNITS V V A A mA V V V nA A V nC nC Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) IC = 2.6A, VGE = 15V TC = 25oC TC = 150oC Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES SSOA VGEP QG(ON) IC = 45A, VCE = VGE VGE = 20V TJ = 150oC, RG = 51, VGE = 15V, L = 5mH, VCE(PK) = 1200V IC = 2.6A, VCE = 600V IC = 2.6A, VCE = 600V VGE = 15V VGE = 20V (c)2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 4) Turn-On Energy (Note 4) Turn-Off Energy (Note 5) Thermal Resistance Junction To Case NOTES: 4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. 5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC IGBT and Diode at TJ = 150oC, ICE = 2.6A, VCE = 960V, VGE = 15V, RG = 51, L = 5mH, Test Circuit (Figure 18) TEST CONDITIONS IGBT and Diode at TJ = 25oC ICE = 2.6A VCE = 960V VGE = 15V RG = 51 L = 5mH Test Circuit (Figure 18) MIN TYP 25 11 205 260 96 425 355 21 11 225 360 96 800 530 MAX 30 15 220 320 590 390 25 15 240 420 1100 580 1.20 UNITS ns ns ns ns J J J ns ns ns ns J J J oC/W Typical Performance Curves 14 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 16 14 12 10 8 6 4 2 0 0 VGE = 15V 12 10 8 6 4 2 0 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TJ = 150oC, RG = 51, VGE = 15V, L = 5mH 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA (c)2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Typical Performance Curves 200 fMAX, OPERATING FREQUENCY (kHz) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (s) ISC , PEAK SHORT CIRCUIT CURRENT (A) 5 5.0 50 VCE = 840V, RG = 51, TJ = 125oC 40 40 50 TJ = 150oC, RG = 51, VGE = 15V, L = 5mH TC = 75oC,VGE = 15V IDEAL DIODE TC VGE 75oC 15V 75oC 12V 100 50 30 30 20 ISC 10 tSC 20 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 1.2oC/W, SEE NOTES 1 TC VGE 110oC 15V oC 12V 110 5 10 0 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) 0 2 3 4 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ICE , COLLECTOR TO EMITTER CURRENT (A) 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 10 DUTY CYCLE <0.5%, V = 15V GE 250s PULSE TEST 8 TC = -55oC TC = 25oC 8 TC = 25oC 6 TC = -55oC 4 TC = 150oC 2 DUTY CYCLE <0.5%, VGE = 12V 250S PULSE TEST 0 0 1 2 3 4 5 6 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 6 TC = 150oC 4 2 0 0 1 2 3 4 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 2000 EOFF , TURN-OFF ENERGY LOSS (J) EON2 , TURN-ON ENERGY LOSS (J) RG = 51, L = 5mH, VCE = 960V 1500 900 RG = 51, L = 5mH, VCE = 960V 800 700 600 500 400 300 200 100 1.0 TJ = 25oC, VGE = 12V OR 15V TJ = 150oC, VGE = 12V OR 15V TJ = 150oC, VGE = 12V, VGE = 15V 1000 500 TJ = 25oC, VGE = 12V, VGE = 15V 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Typical Performance Curves 45 tdI , TURN-ON DELAY TIME (ns) RG = 51, L = 5mH, VCE = 960V 40 35 30 25 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 trI , RISE TIME (ns) 30 25 20 15 10 5 0 1.0 TJ = 25oC, TJ = 150oC, VGE = 15V TJ = 25oC, TJ = 150oC, VGE = 12V Unless Otherwise Specified (Continued) 40 RG = 51, L = 5mH, VCE = 960V 35 TJ = 25oC, TJ = 150oC, VGE = 12V 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 400 td(OFF)I , TURN-OFF DELAY TIME (ns) RG = 51, L = 5mH, VCE = 960V 350 tfI , FALL TIME (ns) VGE = 12V, VGE = 15V, TJ = 150oC 300 250 200 150 VGE = 12V, VGE = 15V, TJ = 25oC 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 700 RG = 51, L = 5mH, VCE = 960V 600 500 400 300 200 TJ = 25oC, VGE = 12V OR 15V 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 150oC, VGE = 12V OR 15V ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT ICE , COLLECTOR TO EMITTER CURRENT (A) 40 35 30 25 20 15 10 5 0 7 8 9 10 11 12 13 14 15 VGE , GATE TO EMITTER VOLTAGE (V) TC = 25oC TC = 150oC TC = -55oC DUTY CYCLE <0.5%, VCE = 20V 250S PULSE TEST VGE, GATE TO EMITTER VOLTAGE (V) 16 14 IG(REF) = 1mA, RL = 260, TC = 25oC VCE = 1200V 12 10 8 6 4 2 0 0 5 10 15 20 25 30 QG , GATE CHARGE (nC) VCE = 400V VCE = 800V FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Typical Performance Curves 2.0 FREQUENCY = 1MHz C, CAPACITANCE (nF) 1.5 CIES 1.0 Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) 5 DUTY CYCLE <0.5%, TC = 110oC 250s PULSE TEST 4 VGE = 15V 3 VGE = 10V 2 0.5 COES CRES 0 5 10 15 20 25 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 1 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 0.2 0.1 10-1 0.05 0.02 PD t2 SINGLE PULSE 10-4 10-3 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 100 t1 0.01 10-2 10-5 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms RHRD4120 90% VGE L = 5mH RG = 51 + VCE 90% VDD = 960V ICE 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2 - FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS (c)2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required, an external Zener is recommended. Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 19. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). (c)2001 Fairchild Semiconductor Corporation HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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