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| 4AJ11 Silicon P Channel Power MOS FET Array Application High speed power switching SP-12 Features * Low on-resistance RDS(on) 0.13, VGS = -10V, ID = -4A RDS(on) 0.17, VGS = -4V, ID = -4A * Capable of 4V gate drive * Low drive current * High speed switching * High density mounting * Suitable for motor driver and solenoid driver and lamp driver * Discrete packaged devices of same die 2SJ173, 2SJ176, 2SJ219 L , 2SJ219 S 1 1,5,8,12 ; Gate 2,4,9,11 ; Drain 3,6,7,10 ; Source 4 5 8 12 9 12 11 2 1 3 6 7 10 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Ratings -60 20 -8 -32 -8 Unit V V A A A W W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- Pch(Tc = 25 C)** 28 Pch** Tch Tstg 4 150 -55 to +150 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** 4 Devices operation 4AJ11 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min -60 Typ -- Max -- Unit V Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- -1.0 -- -- -- -- 0.09 10 -250 -2.0 0.13 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = -4 A VGS = -10 V * ID = -4 A VGS = -4 V * ID = -4 A VDS = -10 V * VDS = -10 V VGS = 0 f = 1 MHz ID = -8 A VGS = -10 V RL = 3.75 ------------------------------------------------ -- 0.12 0.17 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 5.5 7.7 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test s See characteristic curves of 2SJ173, 2SJ176. -- -- -- -- -- -- -- -- 1400 720 220 15 120 220 160 -1.05 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = -8 A, VGS = 0 IF = -8 A, VGS = 0, dIF / dt = 50 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 190 -- s -------------------------------------------------------------------------------------- 4AJ11 Maximum Channel Dissipation Curve 6 Pch (W) 5 4 3 2 1 Pch (W) Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 Maximum Channel Dissipation Curve Condition : Channel dissipation of each die is idetical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 20 Channel Dissipation Channel Dissipation 10 0 25 50 75 100 125 150 Ambient Temperature Ta (C) 0 25 50 75 100 125 Case Temperature Tc (C) 150 |
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