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DISCRETE SEMICONDUCTORS
DATA SHEET
PTB23006U Microwave power transistor
Preliminary specification Supersedes data of December 1994 1997 Feb 19
Philips Semiconductors
Preliminary specification
Microwave power transistor
FEATURES * Very high power gain * Diffused emitter ballasting resistors improve ruggedness * Interdigitated emitter-base structure * Gold metallization with barrier layer to prevent electromigration and gold diffusion during life * Multicell geometry improves power sharing and reduces thermal resistance * Internal input prematching network. APPLICATIONS Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.
3 2 Top view
MAM131
PTB23006U
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common-base class C narrowband amplifier. MODE OF OPERATION Class C (CW) f (GHz) 2 VCC (V) 28 PL (W) >5 Gp (dB) >9 C (%) >40 Zi; ZL () see Figs 5 and 6
PINNING - SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
handbook, 4 columns
1 c
b
e
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Preliminary specification
Microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VCEO VEBO IC Ptot Tstg Tj Tsld Note 1. Up to 0.2 mm from ceramic. PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature soldering temperature t 10 s; note 1 Tmb = 75 C CONDITIONS open emitter RBE = 0 open base open collector - - - - - - -65 - - MIN.
PTB23006U
MAX. 40 40 15 3 0.75 11 +200 200 235 V V V V A W
UNIT
C C C
handbook, halfpage
12
MLC461
P tot (W) 8
4
0 0 50 100 150 200 o T mb ( C)
Fig.2 Power derating curve.
1997 Feb 19
3
Philips Semiconductors
Preliminary specification
Microwave power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. See "Mounting recommendations in the General part of handbook SC19a". CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL ICES V(BR)CBO V(BR)CES V(BR)EBO hFE PARAMETER collector cut-off current collector-base breakdown voltage emitter-base breakdown voltage DC current gain CONDITIONS IE = 0; VCE = 30 V IC = 3 mA; IE = 0 IC = 1.5 mA IC = 450 mA; VCE = 3 V - 40 40 3 15 MIN. - - - PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tj = 75 C note 1
PTB23006U
MAX. 8.5 0.7
UNIT K/W K/W
MAX. 300 V V V
UNIT A
collector-emitter breakdown voltage IC = 3 mA; RBE = 0
150
APPLICATION INFORMATION Microwave performance up to Tmb = 25 C in a common-base class C test circuit. MODE OF OPERATION class C (CW) f (GHz) 2 VCE (V) 28 PL (W) >5 typ. 5.8 Gp (dB) >9 typ. 10.5 C (%) >40 typ. 45 Zi; ZL () see Figs 5 and 6
1997 Feb 19
4
Philips Semiconductors
Preliminary specification
Microwave power transistor
PTB23006U
handbook, full pagewidth
30
30
1 10 5.25 1.7 17 40 2.24 1.4 5 4
10
5
5
2
5
13 40
3.5
4
5.5 5 3
2.24
MLC718
handbook, full pagewidth
VCC C1
L2 input L1 C2 output
C3
MLC719
Dimensions in mm. Substrate: PTFE fibreglass. Thickness: 0.8 mm. Permittivity: r = 2.54.
Fig.3 Prematching test circuit.
1997 Feb 19
5
Philips Semiconductors
Preliminary specification
Microwave power transistor
List of components (see Fig.3) COMPONENT C1 C2 C3 L1, L2 DESCRIPTION feedthrough bypass capacitor DC blocking chip capacitor tuning capacitor 3 turns 0.5 mm copper wire; internal diameter = 2 mm 100 pF 0.5 to 5 pF Tekelec 5855 VALUE
PTB23006U
ORDERING INFORMATION Erie1250-003
MGA244
handbook, halfpage
3
PL (W)
2
1
0 0 100 200 300 Pi (mW) 400
Fig.4 Load power as a function of input power.
1997 Feb 19
6
Philips Semiconductors
Preliminary specification
Microwave power transistor
PTB23006U
1
handbook, full pagewidth
0.5
2
0.2
2.3 GHz
5 10
+j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10
0.5 1 VCC = 28 V; Zo = 50 ; PL = 2.3 W.
2
MCD615
Fig.5 Input impedance as a function of frequency.
1
handbook, full pagewidth
0.5
2
2.3 GHz 0.2 5 10 +j 0 -j 10 0.2 5 0.2 0.5 1 2 5 10
0.5 1 VCC = 28 V; Zo = 50 ; PL = 2.3 W.
2
MCD614
Fig.6 Optimum load impedance as a function of frequency.
1997 Feb 19
7
Philips Semiconductors
Preliminary specification
Microwave power transistor
PACKAGE OUTLINE
PTB23006U
handbook, full pagewidth
0.1 3.45 2.90 3 20.5 max seating plane 1.0 1 O 0.25 M 4.5 min 0.25 M 4.5 max
1.7 max
3.2 2.9
5.1
5.5 max
3.4 2 2.0 7.1 14.2
(1)
4.5 min
MBC888
Dimensions in mm. Torque on nut: max. 0.4 Nm. Recommended screw: M2.5. (1) Flatness of this area ensures full thermal contact with bolt head.
Fig.7 SOT440A.
1997 Feb 19
8
Philips Semiconductors
Preliminary specification
Microwave power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PTB23006U
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Feb 19
9
Philips Semiconductors
Preliminary specification
Microwave power transistor
NOTES
PTB23006U
1997 Feb 19
10
Philips Semiconductors
Preliminary specification
Microwave power transistor
NOTES
PTB23006U
1997 Feb 19
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01779

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