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BBY 52-02W
Silicon Tuning Diode Preliminary data * High Q hyperband tuning diode * Low series inductance * Designed for low tuning voltage operation * For VCO's in mobile communications equipment
2
1
VES05991
Type BBY 52-02W
Marking Ordering Code K Q62702-B0860
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 7 20 -55 ...+150 -55 ...+150 Unit V mA C
VR IF T op T stg
Semiconductor Group Semiconductor Group
11
Jul-23-1998 1998-11-01
BBY 52-02W
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 100
Unit
IR IR
-
nA
VR = 6 V
Reverse current
VR = 6 V, TA = 65 C
AC characteristics Diode capacitance
CT
1.4 0.95 0.9 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.09 0.6 2.2 2 1.75 1.45 2.1 1.7 -
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
Capacitance ratio
CT1/C T4 rs CC Ls
1.1 -
pF nH
VR = 1 V, VR = 4 V, f = 1 MHz
Series resistance
VR = 1 V, f = 1 GHz
Case capacitance
f = 1 MHz
Series inductance chip to ground
Semiconductor Group Semiconductor Group
22
Jul-23-1998 1998-11-01
BBY 52-02W
Diode capacitance CT = f (V R) f = 1MHz
Reverse current IR = f (VR)
TA = 25 C
45
pA
2.4
pF
2.0
CD
1.8 1.6
IR
35 30 25
1.4 20 1.2 15 1.0 0.8 0.6 0.4 1.0 10 5 0 0.0
1.5
2.0
2.5
3.0
V
4.0
1.0
2.0
3.0
4.0
5.0
V
7.0
VR
VR
Semiconductor Group Semiconductor Group
33
Jul-23-1998 1998-11-01

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