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Composite Transistors
XN04407 (XN4407)
Silicon PNP epitaxial planar transistor
For general amplification I Features
* Two elements incorporated into one package (Each transistor is separated) * Reduction of the mounting area and assembly cost by one half
4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6
1.50+0.25 -0.05 2.8+0.2 -0.3
Unit: mm
0.16+0.10 -0.06
3
2
1
(0.65)
0.30+0.10 -0.05 0.50+0.10 -0.05
I Basic Part Number of Element
* 2SB0709A (2SB709A) + 2SB0970 (2SB970)
10
1.1+0.2 -0.1 1.1+0.3 -0.1
Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Total Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg
Rating -60 -50 -7 -100 -200 -15 -10 -7 -500 -1 300 150 -55 to +150
Unit V V V mA mA V V V mA A mW C C
1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ: SC-74
0 to 0.1
I Absolute Maximum Ratings Ta = 25C
4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package
Marking Symbol: ES Internal Connection
4 5 6
Tr2
Tr1
3
2
1
Note) The part number in the parenthesis shows conventional part number.
Publication date: May 2002 SJJ00230AED
0.40.2
5
1
XN04407
I Electrical Characteristics Ta = 25C 3C
* Tr1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Symbol VCBO VCEO VEBO ICBO ICEO DC current gain Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product hFE VCE(sat) Cob fT Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VCE = -10 V, IC = -2 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 1 mA, f = 200 MHz 160 - 0.3 2.7 80 Min -60 -50 -7 - 0.1 -100 460 - 0.5 V pF MHz Typ Max Unit V V V A
* Tr2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current DC current gain * Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance Gain bandwidth product Note) *: Pulse test VCE(sat) VBE(sat) Cob fT Conditions IC = -10 A, IE = 0 IC = -1 mA, IB = 0 IE = -10 A, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = -500 mA VCE = -2 V, IC = -1 A IC = -400 mA, IB = -8 mA IC = -400 mA, IB = -8 mA VCB = -10 V, IE = 0, f = 1 MHz VCB = -10 V, IE = 50 mA, f = 200 MHz 100 60 - 0.16 - 0.8 22 130 - 0.3 -1.2 V V pF MHz Min -15 -10 -7 - 0.1 350 Typ Max Unit V V V A
Common characteristics chart PT T a
350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160
Total power dissipation PT (mW)
Ambient temperature Ta (C)
2
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XN04407
Characteristics chart of Tr1 IC VCE
-120 Ta = 25C
IC IB
-160 -140 VCE = -10 V Ta = 25C
-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0
IB VBE
VCE = -10 V Ta = 25C
-100
Collector current IC (mA)
Collector current IC (mA)
-80
IB = -300 A -250 A -200 A -150 A
-100 -80 -60 -40 -20
-60
-40
-100 A -50 A
-20
0
Base current IB (mA)
-120
- 0.5
0
-2
-4
-6
-8
-10
-12
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0
-1.2
0
0
- 0.2
- 0.4
- 0.6
- 0.8
Collector to emitter voltage VCE (V)
Base current IB (mA)
Base to emitter voltage VBE (V)
IC VBE
Collector to emitter saturation voltage VCE(sat) (V)
-120 VCE = -10 V 25C
-10 -3 -1
VCE(sat) IC
IC / IB = 10
hFE IC
600 VCE = -10 V
-100
500 Ta = 75C
Collector current IC (mA)
-80
DC current gain hFE
Ta = 75C
-25C
- 0.3 - 0.1
Ta = 75C 25C -25C
400 25C 300 -25C
-60
-40
- 0.03 - 0.01
200
-20
- 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1 000
100
0
0
- 0.2
- 0.4
- 0.6
- 0.8
-1.0
0 - 0.1
-1
-10
-100
-1 000
Base to emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
10
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
3
1 0
-5 -10 -15 -20 -25 -30 -35 -40
Collector to base voltage VCB (V)
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3
XN04407
Characteristics chart of Tr2 IC VCE
Ta = 25C -350 IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA 0 -1 -2 -3 -4 -5 -6
VBE(sat) IC
Base to emitter saturation voltage VBE(sat) (V)
IC / IB = 50
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
-10 IC / IB = 50
-400
-10
Collector current IC (mA)
-300 -250
-1
Ta = -25C 75C
25C
-1
Ta = 75C 25C -25C
-200
- 0.1
- 0.1
-150 -100 -50 0
- 0.01
- 0.01
- 0.001 -10
-100
-1 000
-10 000
- 0.001 -10
-100
-1 000
-10 000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
hFE IC
400 350 Ta = 75C 300 VCE = -2 V
1 000
Cob VCB
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
DC current gain hFE
250 200 150 100 50 0 -1
25C -25C
100
10
-10
-100
-1 000
1 0
-2
-4
-6
-8 -10 -12 -14 -16
Collector current IC (mA)
Collector to base voltage VCB (V)
4
SJJ00230AED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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