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PD-94063A
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
30LJQ150
30 Amp, 150V
Major Ratings and Characteristics
Description/Features The 30LJQ150 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is Units packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse A leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRFV 19500 quality conformance testing is available on source control drawings to TX, TXV and S quality levels. A V * * * * Hermetically Sealed Low Forward Voltage Drop High Frequency Operation Guard Ring for Enhanced Ruggedness and Long term Reliability * Surface Mount * Lightweight
Characteristics IF(AV) VRRM IFSM @ tp = 8.3ms half-sine VF @ 30Apk, TJ =125C
30LJQ150 30
150 140 0.92
TJ, Tstg Operating and storage -55 to 150
C
CASE STYLE
CATHODE ANODE ANODE
IR Case Style SMD-0.5
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6/28/01
30LJQ150
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
30LJQ150 150
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 140 A @ tp = 8.3 ms half-sine
Limits
30
Units
A
Conditions
50% duty cycle @ TC = 84C, square waveform
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop See Fig. 1Q
Limits
1.07 1.26 1.56 0.96 1.18 1.49 0.75 0.92 1.21
Units
V V V V V V V V V mA mA mA pF nH @ 15A @ 30A @ 60A @ 15A @ 30A @ 60A @ 15A @ 30A @ 60A TJ = 25C TJ = 100C TJ = 125C
Conditions
TJ = -55C R
TJ = 25CR
TJ = 125C R
I RM
Max. Reverse Leakage Current See Fig. 2Q
0.12 1.2 6.0
VR = rated VR R
CT LS
Max. Junction Capacitance Typical Series Inductance
310 4.8
VR = 5VDC ( 1MHz, 25C ) R Measured from center of cathode pad to center of anode pad
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size (Typical) Case Style Q Pulse Width < 300s, Duty Cycle < 2% R Pins 2 and 3 externally tied together 1.0 125X125 SMD-0.5 g mils
Limits Units
-55 to 150 -55 to 150 1.82 C C C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4
2
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30LJQ150
10
125C
Reverse Current - I R ( mA )
1
100C 75C
100
0.1
25C
0.01
0.001
0.0001
Instantaneous Forward Current - I F (A)
0
20
40
60
80
100
120
140
160
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
10
Tj = 125C
1000
Tj = 25C
Junction Capacitance - C (pF) T
Tj = -55C
T J = 25C
100
1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - V F (V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
10 0 20 40 60 80 100 120 140 160
Reverse Voltage -VR (V)
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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30LJQ150
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05
0.1 0.02 0.01
0.0001
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
180 160
Allowable Case Temprature - (C)
30LJQ150
R thJC = 1.8C/W
140 120 100 80 60 40 20 0 0 10 20
DC
30
40
50
Average Forward Current - I F(AV) (A)
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 6/01
4
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