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| 2N5911/5912 Matched N-Channel JFET Pairs Product Summary Part Number 2N5911 2N5912 VGS(off) (V) -1 to -5 -1 to -5 V(BR)GSS Min (V) -25 -25 gfs Min (mS) IG Typ (pA) 5 5 -1 -1 jVGS1 - VGS2j Max (mV) 10 15 Features D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 1 pA Low Noise High CMRR: 85 dB Benefits D Minimum Parasitics Ensuring Maximum High-Frequency Performance D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal Applications D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters Description The 2N5911/5912 are matched pairs of JFETs mounted in a TO-78 package. This two-chip design reduces parasitics and gives better performance at high frequencies while ensuring extremely tight matching. The hermetically-sealed TO-78 package is available with full military screening per MIL-S-19500 (see Military Information). TO-78 S1 1 D1 7 D2 G2 For similar products see the SO-8 packaged SST440/SST441, the TO-71 packaged U440/U441, the low-noise SST/U401 series, and the low-leakage U421/423 data sheets. 2 6 3 G1 4 Case Top View 5 S2 Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . 367 mW Totalb . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 3 mW/_C above 25_C b. Derate 4 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70255. Applications information may also be obtained via FaxBack, request document #70595. Siliconix P-37407--Rev. C, 04-Jul-94 1 2N5911/5912 Specificationsa Limits 2N5911 2N5912 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS VGS(F) IG = -1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 5 mA TA = 125_C VDG = 10 V, IG = 5 mA IG = 1 mA, VDS = 0 V -35 -3.5 15 -1 -2 -1 -0.3 -1.5 0.7 -25 -1 7 -5 40 -100 -250 -100 -100 -0.3 -4 -25 -1 7 -5 40 -100 -250 -100 -100 -0.3 -4 V mA pA nA pA nA V Gate Operating Current Gate-Source Voltage Gate-Source Forward Voltaged Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos gfs gos Ciss Crss en NF VDG = 10 V, ID = 5 mA G f = 1 kHz 6 70 5.8 90 3 1 4 0.1 5 5 10 100 10 150 5 1.2 20 1 5 5 10 100 10 150 5 pF 1.2 20 1 nV Hz dB mS mS mS mS VDG = 10 V, ID = 5 mA G f = 100 MHz VDG = 10 V, ID = 5 mA G f = 1 MHz VDG = 10 V, ID = 5 mA f = 10 kHz RG = 100 kW Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature Saturation Drain Current Ratio Transconductance Ratio |VGS1 VGS2| VDG = 10 V, ID = 5 mA VDG = 10 V, ID = 5 mA TA = -55 to 125_C VDS = 10 V, VGS = 0 V VDS = 10 V, ID = 5 mA f = 1 kHz VDG = 10 V, ID = 5 mA, TA = 125_C VDG = 5 to 10 V, ID = 5 mA 4 15 0.98 0.98 0.95 0.95 10 20 1 1 20 0.95 0.95 15 40 1 1 20 mV mV/_C D|VGS1 VGS2| DT I DSS1 I DSS2 gfs1 gfs2 |I G1 I G2| CMRR Differential Gate Current Common Mode Rejection Ratiod 0.005 85 nA dB Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. This parameter not registered with JEDEC. NZF 2 Siliconix P-37407--Rev. C, 04-Jul-94 2N5911/5912 Typical Characteristics 50 I DSS - Saturation Drain Current (mA) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 20 gfs - Forward Transconductance (mS) 100 nA 10 nA Gate Leakage Current IG(on) @ ID 40 16 TA = 125_C I G - Gate Leakage 1 nA 100 pA 10 pA TA = 25_C 1 pA 0.1 pA 0 4 8 IGSS @ 125_C ID = 10 mA 30 12 1 mA 1 mA 10 mA 20 gfs 8 10 IDSS 4 IGSS @ 25_C 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 12 16 20 VDG - Drain-Gate Voltage (V) 10 Output Characteristics VGS(off) = -2 V 30 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V 8 I D - Drain Current (mA) I D - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V 2 -0.8 V -1.0 V -1.2 V 0 2 4 6 8 10 24 -1.0 V 18 -1.5 V -2.0 V 12 -2.5 V -3.0 V 6 -3.5 V 0 VDS - Drain-Source Voltage (V) 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) Output Characteristics 5 VGS(off) = -2 V 4 I D - Drain Current (mA) VGS = 0 V -0.2 V I D - Drain Current (mA) -0.4 V 3 -0.6 V 2 -0.8 V 1 -1.0 V -1.2 V 0 0 0.2 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) 0 0 0.2 12 15 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V 9 -2.0 V 6 -1.0 V -1.5 V -2.5 V -3.0 V 3 -3.5 V 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) Siliconix P-37407--Rev. C, 04-Jul-94 3 2N5911/5912 Typical Characteristics (Cont'd) 10 Transfer Characteristics VGS(off) = -2 V VDS = 10 V 30 Transfer Characteristics VGS(off) = -5 V VDS = 10 V 8 I D - Drain Current (mA) TA = -55_C 6 25_C I D - Drain Current (mA) 24 TA = -55_C 25_C 18 4 125_C 12 125_C 2 6 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 10 g fs - Forward Transconductance (mS) Transconductance vs. Gate-Source Voltage g fs - Forward Transconductance (mS) VGS(off) = -2 V VDS = 10 V f = 1 kHz 10 Transconductance vs. Gate-Source Voltage VGS(off) = -5 V 8 TA = -55_C 25_C 125_C 8 25_C 6 125_C TA = -55_C 6 4 4 2 2 VDS = 10 V f = 1 kHz 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) 50 Circuit Voltage Gain vs. Drain Current rDS(on) - Drain-Source On-Resistance ( W ) 200 On-Resistance vs. Drain Current 40 VGS(off) = -2 V A V - Voltage Gain 30 VGS(off) = -5 V 20 AV + 10 g fs R L 1 ) R Lg os 160 VGS(off) = -2 V 120 80 -5 V Assume VDD = 15 V, VDS = 5 V R L + 10 V ID 40 TA = 25_C 0 1 10 ID - Drain Current (mA) 100 0 0.1 1 ID - Drain Current (mA) 10 4 Siliconix P-37407--Rev. C, 04-Jul-94 2N5911/5912 Typical Characteristics (Cont'd) 10 Common-Source Input Capacitance vs. Gate-Source Voltage C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 5 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz C iss - Input Capacitance (pF) 8 4 6 VDS = 5 V 4 0V 2 10 V 3 VDS = 5 V 2 0V 1 10 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Input Admittance 100 TA = 25_C VDS = 10 V ID = 10 mA gig bis (mS) 100 TA = 25_C VDS = 10 V ID = 10 mA 10 -bfs Forward Admittance 10 (mS) -gfg 1 big 1 bfg gfs gis 0.1 100 200 500 1000 f - Frequency (MHz) 0.1 100 200 500 1000 f - Frequency (MHz) 10 TA = 25_C VDS = 10 V ID = 10 mA 1 (mS) -brs Reverse Admittance 100 TA = 25_C VDS = 10 V ID = 10 mA 10 (mS) Output Admittance -brg 0.1 -grg 0.01 100 200 500 1000 f - Frequency (MHz) -grs bog, bos 1 grg 0.1 gog, gos 100 200 500 1000 f - Frequency (MHz) Siliconix P-37407--Rev. C, 04-Jul-94 5 2N5911/5912 Typical Characteristics (Cont'd) 50 Equivalent Input Noise Voltage vs. Frequency VDS = 10 V 150 Output Conductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz (nV / Hz) g os - Output Conductance ( mS) 40 120 TA = -55_C 25_C 60 30 ID = 1 mA 20 90 e n - Noise Voltage 10 10 mA 30 125_C 0 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0.1 1 ID - Drain Current (mA) 10 200 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage gos 200 g fs - Forward Transconductance (mS) 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -5 V VDS = 10 V f = 1 kHz g os - Output Conductance ( mS) 160 160 8 TA = -55_C 6 25_C 125_C 2 120 120 80 rDS 40 rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz 0 -2 -4 -6 -8 80 4 40 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 -10 0 0.1 1 ID - Drain Current (mA) 10 6 Siliconix P-37407--Rev. C, 04-Jul-94 |
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