 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTJD2152P Trench Small Signal MOSFET 8 V, Dual P-Channel, SC-88 ESD Protection Features http://onsemi.com V(BR)DSS RDS(on) TYP 0.22 W @ -4.5 V -8 V 0.32 W @ -2.5 V 0.51 W @ -1.8 V -0.775 A ID Max * * * * * Leading -8 V Trench for Low RDS(ON) Performance ESD Protected Gate Small Footprint (2 x 2 mm) Same Package as SC-70-6 Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish Load Power switching DC-DC Conversion Li-Ion Battery Charging Circuits Cell Phones, Media Players, Digital Cameras, PDAs Applications * * * * SOT-363 SC-88 (6 LEADS) S1 1 6 D1 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Based on RqJA) Power Dissipation (Based on RqJA) Continuous Drain Current (Based on RqJL) Power Dissipation (Based on RqJL) Pulsed Drain Current Steady State Steady State Steady State Steady State TA = 25 C TA = 85 C TA = 25 C TA = 85 C TA = 25 C TA = 85 C TA = 25 C TA = 85 C t 10 ms PD IDM TJ, TSTG IS TL ID PD Symbol VDSS VGS ID Value -8.0 8.0 -0.775 -0.558 0.27 0.14 -1.1 -0.8 0.55 0.29 1.2 -55 to 150 -0.775 260 A W A W Unit V V A G1 2 5 G2 D2 3 4 S2 Top View MARKING DIAGRAM 6 1 SC-88 (SOT-363) CASE 419B Style 26 TA D TAD = Device Code = Date Code PIN ASSIGNMENT 1 Source-1 Gate-1 Drain-2 Top View 6 Drain-1 Gate-2 Source-2 Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A C THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction-to-Ambient - Steady State Junction-to-Lead (Drain) - Steady State Symbol RqJA RqJL Typ 400 194 Max 460 226 Unit C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. (c) Semiconductor Components Industries, LLC, 2004 1 January, 2004 - Rev. 2 Publication Order Number: NTJD2152/D NTJD2152P ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) () VGS = -4.5 V, ID = -0.57 A VGS = -2.5 V, ID = -0.48 A VGS = -1.8 V, ID = -0.20 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -4.0 V, ID = -0.5 A, RG = 8 0 W 05A 8.0 13 23 50 36 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = -4.5 V, VDS = -5.0 V, ID = -0.6 A 06 VGS = 0 V, f = 1.0 MHz, VDS = -8.0 V 80 160 38 28 2.2 0.1 0.5 0.5 225 55 40 4.0 nC pF gFS VGS = -4.0 V, ID = -0.57 A VGS = VDS, ID = -250 mA -0.45 -0.83 2.2 0.22 0.32 0.51 2.0 0.3 0.46 0.9 S -1.0 V mV/ C W V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS = 0 V, VDS = -6.4 V VDS = 0 V, VGS = 8.0 V VGS = 0 V, ID = -250 mA -8.0 -10.5 -6.0 1.0 10 V mV/C mA mA Symbol Test Condition Min Typ Max Unit DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -0.23 A 0 23 TJ = 25C TJ = 125C 0.76 0.63 78 ns 1.1 V Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -0.77 A 2. Pulse Test: pulse width 300ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD2152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.4 -ID, DRAIN CURRENT (AMPS) 1.2 1 0.8 0.6 0.4 -1.4 V 0.2 0 0 -1.2 V 2 4 6 8 -1.6 V VGS = -4.5 V to -2.6 V VGS = -2.2 V -2 V TJ = 25C -ID, DRAIN CURRENT (AMPS) -1.8 V 1.4 VDS -10 V 1.2 1 0.8 0.6 0.4 0.2 0 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ = 125C 25C TJ = -55C 0.4 0.8 1.2 2 1.6 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 2.4 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 Figure 2. Transfer Characteristics VGS = -4.5 V VGS = -2.5 V TJ = 125C TJ = 25C TJ = -55C 0.4 0.4 0.3 TJ = 125C TJ = 25C TJ = -55C 0.3 0.2 0.2 0.1 0 0 0.2 0.8 0.6 0.4 1 -ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.1 0 0 0.2 0.4 1 0.8 0.6 -ID, DRAIN CURRENT (AMPS) 1.2 1.4 Figure 3. On-Resistance vs. Drain Current and Temperature 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = -0.7 A VGS = -4.5 V and -2.5 V 300 Figure 4. On-Resistance vs. Drain Current and Temperature TJ = 25C C, CAPACITANCE (pF) 240 Ciss 180 VGS = 0 V 1.4 1.2 1 120 Coss 60 Crss 0 -8 0.8 0.6 -50 -25 0 25 50 75 100 125 150 -6 -4 -2 0 TJ, JUNCTION TEMPERATURE (C) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 NTJD2152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 -IS, SOURCE CURRENT (AMPS) QG(TOT) 4 VGS 3 QGS QGD 0.7 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 0.1 0 2.4 0 0.2 0.4 0.6 TJ = 150C TJ = 25C 0.8 1 2 1 0 0 0.4 ID = -0.6 A TJ = 25C 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD2152P ORDERING INFORMATION Device Order Number NTJD2152PT1 NTJD2152PT1G NTJD2152PT2 NTJD2152PT2G NTJD2152PT4 NTJD2152PT4G Package Type SOT-363 SOT-363 (Pb-Free) SOT-363 SOT-363 (Pb-Free) SOT-363 SOT-363 (Pb-Free) Tape and Reel Size 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NTJD2152P PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE T G DIM A B C D G H J K N S M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 A 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) B N J C M H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC-88/SC70-6 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTJD2152P/D |
Price & Availability of NTJD2152P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |