![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
E2I0030-17-Y1 Semiconductor Semiconductor MSM524204 1,048,576-Word 4-Bit CMOS STATIC RAM This version: Jan. 1998 MSM524204 Previous version: Aug. 1996 Pr el im in ar y DESCRIPTION The MSM524204 is a 1,048,576-word by 4-bit CMOS fast static RAM featuring a single 3.3 V power supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely static, external clock and refreshing operations are unnecessary, making this device very easy to use. The MSM524204 can be used in the high-speed operation of an access time 25 ns due to adopting a high-performance CMOS technology. In addition, the MSM524204 is provided with a chip enable signal (CE) suited to the power-down function, and an output enable signal (OE) suited to the I/O bus line control. FEATURES * 1,048,576-word 4-bit configuration * Single 3.3 V power supply * Fully static operation * Operating temperature range: Ta = 0C to 70C * Power dissipation Standby: 10 mA (Max.) Operation: - 25 170 mA (Max.) - 30 160 mA (Max.) - 35 150 mA (Max.) * Access time: - 25 25 ns (Max.) - 30 30 ns (Max.) - 35 35 ns (Max.) * (Input/Output) LVTTL compatible * Power-down function by chip enable signal * 3-state output * Package: 32-pin 400 mil plastic SOJ (SOJ32-P-400-1.27) (Product : MSM524204-xxJS) xx indicates speed rank. PRODUCT FAMILY Family MSM524204-25 MSM524204-30 MSM524204-35 Access Time (Max.) 25 ns 30 ns 35 ns Package 400 mil 32-pin SOJ 1/10 Semiconductor PIN CONFIGURATION (TOP VIEW) A0 1 A1 2 A2 3 A3 4 A4 5 CE 6 I/O1 7 VCC 8 VSS 9 I/O2 10 WE 11 A5 12 A6 13 A7 14 A8 15 A9 16 32-Pin Plastic SOJ Pin Name A0 - A19 I/O1 - I/O4 CE OE WE VCC, VSS NC Function Address Input Data Input/Output Chip Enable Output Enable Write Enable Power Supply No Connection MSM524204 32 A19 31 A18 30 A17 29 A16 28 A15 27 OE 26 I/O4 25 VSS 24 VCC 23 I/O3 22 A14 21 A13 20 A12 19 A11 18 A10 17 NC 2/10 Semiconductor MSM524204 BLOCK DIAGRAM A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 I/O1 I/O2 I/O3 I/O4 Input Data Control Column I/O Circuits Column Select Row Select Memory Array 1024 Rows 1024 Columns 4 Blocks VCC VSS A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 CE WE OE FUNCTION TABLE Operating Mode Standby Read Cycle Write Cycle CE H L L L WE * H H L OE * H L * Operating Contents Output Floating Output Floating Data Read Data Write *Don't Care ("H" or "L") 3/10 Semiconductor MSM524204 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Power Supply Voltage Pin Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VCC VT PD Topr Tstg Condition Ta = 25C, for VSS Ta = 25C -- -- Rating -0.5 to 4.6 -0.5* to VCC + 0.5 1.0 0 to 70 -55 to 125 Unit V V W C C * -2.0 V Min. for pulse width less than 10 ns. Recommended Operating Conditions Parameter Power Supply Voltage Input High Voltage Input Low Voltage Load Capacitance Symbol VCC VSS VIH VIL CL Condition -- VCC = 3.3 V 0.3 V -- Min. 3.0 0 2.0 -0.3* -- Typ. 3.3 0 -- -- -- Max. 3.6 0 VCC + 0.3 0.8 30 Unit V V V V pF * -2.0 V Min. for pulse width less than 10 ns. Capacitance (Ta = 25C, f = 1 MHz) Parameter Input Capacitance Input/Output Capacitance Symbol CI CI/O Condition VIN = 0 V VI/O = 0 V Min. -- -- Max. 8 8 Unit pF pF Note: This parameter is periodically sampled and not 100% tested. 4/10 Semiconductor DC Characteristics MSM524204 (VCC = 3.3 V 0.3 V, Ta = 0C to 70C) Parameter Input Leakage Current Input/Output Leakage Current Output High Voltage Output Low Voltage Standby Power Supply Current ICCS1 Operating Power Supply Current ICCA Symbol ILI ILO VOH VOL ICCS Condition VI = 0 to VCC CE = VIH or OE = VIH, VI/O = 0 to VCC IOH = -2 mA IOL = 2 mA CE VCC - 0.2 V, VIN 0.2 V or VIN VCC - 0.2 V CE = VIH, Min. cycle Min. cycle, IOUT = 0 mA Min. -10 -10 2.4 -- -- -- -- MSM524204 Typ. Max. -- -- -- -- -- -- -- 10 10 -- 0.4 10 40 q Unit mA mA V V mA mA mA 170 mA 160 mA 150 mA q 524204-25 524204-30 524204-35 AC Characteristics Test Conditions Parameter Input Pulse Level Input Rise and Fall Times Input/Output Timing Level Output Load Condition VIH = 3 V, VIL = 0 V 3 ns 1.4 V See Figures 1.4 V 500 W DOUT 30 pF (Including scope and jig) DOUT 1.4 V 500 W 5 pF (Including scope and jig) Figure 1 Output Load Figure 2 Output Load (tOLZ, tCLZ, tOHZ, tCHZ, tWLZ, tWHZ) 5/10 Semiconductor Read Cycle MSM524204 (VCC = 3.3 V 0.3 V, Ta = 0C to 70C) MSM524204-25 Parameter Read Cycle Time Address Access Time CE Access Time OE Access Time CE to Output in Low-Z OE to Output in Low-Z Output Hold Time from Address Change CE to Output in High-Z OE to Output in High-Z Symbol tRC tAA tCO tOE tCLZ tOLZ tOH tCHZ tOHZ Min. 25 -- -- -- 5 0 5 -- -- Max. -- 25 25 12 -- -- -- 12 12 MSM524204-30 Min. 30 -- -- -- 5 0 5 -- -- Max. -- 30 30 15 -- -- -- 14 14 MSM524204-35 Min. 35 -- -- -- 5 0 5 -- -- Max. -- 35 35 17 -- -- -- 15 15 Unit ns ns ns ns ns ns ns ns ns Address Controlled Read (WE = H, CE = L, OE = L) tRC ADDRESS tAA tOH DOUT Dataout Valid 6/10 , , Semiconductor CE, OE Controlled Read (WE = H) tRC ADDRESS tAA tCHZ CE tCO tCLZ OE tOE tOHZ DOUT Dataout Valid tOLZ tOH MSM524204 Notes : 1. A read cycle occurs during the overlap of CE = "L", OE = "L" and WE = "H". 2. tCHZ and tOHZ are specified by the time when DATA is floating, not defined by the output level. 7/10 Semiconductor Write Cycle Parameter Write Cycle Time Address Setup Time Write Pulse Width Write Recovery Time Data Setup Time Data Hold Time WE to Output in High-Z CE to End of Write WE CE Symbol tWC tAS tWP tWR tDS tDH tWHZ tCW tAW MSM524204 (VCC = 3.3 V 0.3 V, Ta = 0C to 70C) MSM524204-25 MSM524204-30 MSM524204-35 Min. 25 0 15 3 3 12 0 -- 17 0 Max. -- -- -- -- -- -- -- 10 -- Min. 30 0 20 3 3 14 0 -- 22 0 Max. -- -- -- -- -- -- -- 12 -- Min. 35 0 25 3 3 16 0 -- 27 0 Max. -- -- -- -- -- -- -- 14 -- Unit ns ns ns ns ns ns ns ns , , Address Valid to End of Write 17 -- 22 -- 27 -- ns Output Active from End of Write tWLZ -- -- -- ns WE Controlled Write (OE = L) tWC ADDRESS tCW CE tAW WE tAS tWR tWP tWLZ DOUT tDS tDH tWHZ DIN Data In 8/10 Semiconductor CE Controlled Write (OE = H) tWC ADDRESS tAS CE tCW MSM524204 WE DIN DOUT Notes: tAW tWR tWP tDS tDH Data In High Impedance 1. 2. 3. 4. 5. 6. A write cycle occurs during the overlap of CE = "L" and WE = "L". OE may be either of "H" or "L" in the write cycle. tAS is specified from CE = "L" or WE = "L", whichever occurs last. tWP is an overlap time of CE = "L" and WE = "L". tWR, tDS and tDH are specified from CE = "H" or WE = "H", whichever occurs first. tWHZ is specified by the time when DATA output is floating, not defined by the output level. 7. When I/O pins are in the output mode, don't apply the inverted input signal to the output pins. 9/10 Semiconductor MSM524204 PACKAGE DIMENSIONS (Unit : mm) SOJ32-P-400-1.27 Mirror finish Package material Lead frame material Pin treatment Solder plate thickness Package weight (g) Epoxy resin 42 alloy Solder plating 5 mm or more 1.42 TYP. Notes for Mounting the Surface Mount Type Package The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. Therefore, before you perform reflow mounting, contact Oki's responsible sales person for the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). 10/10 |
Price & Availability of MSM524204
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |