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| PD-96956 Rev B Integrated Power Hybrid IC for Appliance Motor Drive Applications Description IRAMX20UP60A Series 20A, 600V with open Emitter Pins International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor Drives applications such air conditioning systems and compressor drivers as well as in light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and input logic protection function, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package (SiP2) with heatspreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. * * * * * * * * * * * * Features Integrated Gate Drivers Temperature Monitor Overcurrent shutdown Fully Isolated Package Low VCE (on) Non Punch Through IGBT Technology. Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.75~1.5kW / 85~253 Vac Isolation 2000VRMS min Absolute Maximum Ratings Parameter VCES / VRRM V+ IO @ TC=25C IO @ TC=100C IO FPWM Pd VISO TJ (IGBT & Diodes) TJ (Driver IC) T Description IGBT/Diode Blocking Voltage Positive Bus Input Voltage RMS Phase Current (Note 1) RMS Phase Current (Note 1) Pulsed RMS Phase Current (Note 2) PWM Carrier Frequency Power dissipation per IGBT @ TC =25C Isolation Voltage (1min) Operating Junction temperature Range Operating Junction temperature Range Mounting torque Range (M3 screw) Max. Value 600 450 20 10 30 20 38 2000 -40 to +150 -40 to +150 0.5 to 0.6 kHz W VRMS C Nm A Units V Note 1: Sinusoidal Modulation at V+=400V, TJ=150C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25C; FPWM=16kHz. www.irf.com 1 IRAMX20UP60A Internal Electrical Schematic - IRAMX20UP60B V+ (10) VRU (12) VRV (13) VRW (14) VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 24 HO1 25 VB1 1 VCC 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 LO2 15 Driver IC HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) T/ITRIP (21) THERMISTOR VCC (22) VSS (23) 2 HIN1 3 HIN2 4 HIN3 5 LIN1 LO3 14 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 78 9 10 11 12 13 2 www.irf.com IRAMX20UP60A Absolute Maximum Ratings (Continued) All voltages are absolute referenced to COM. Symbol IBDF PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Diode Peak Forward Current Min --Max 4.5 25.0 VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions A W V V V tP= 10ms, TJ = 150C, TC=100C tP=100s, TC =100C ESR / ERJ series Bootstrap Resistor Peak Power --(Single Pulse) High Side floating supply VB1,2,3 - 25 voltage High Side floating supply voltage -0.3 Low Side and logic fixed supply voltage Input voltage LIN, HIN, T/ITrip -0.3 VIN -0.3 V Inverter Section Electrical Characteristics @TJ= 25C Symbol V(BR)CES V(BR)CES / T VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Min 600 ---------------------Typ --0.3 1.75 2.10 5 165 1.90 1.50 ---22 --Max ----2.15 2.60 80 --2.60 2.20 1.25 1.10 --5 Units Conditions V V/C V VIN=5V, IC=250A VIN=5V, IC=1.0mA (25C - 150C) IC=10A, VCC=15V IC=10A, VCC=15V, TJ=150C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150C IC=10A IC=10A, TJ=150C IF=1A IF=1A, TJ=125C ICES A VFM V VBDFM RBR RBR/RBR V % www.irf.com 3 IRAMX20UP60A Inverter Section Switching Characteristics @ TJ= 25C Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Reverse Bias Safe Operating Area Min ----------------------Typ 390 150 540 35 100 620 305 925 65 130 56 FULL SQUARE Max 490 200 690 70 --780 400 1180 135 --84 ns nC J ns J Units Conditions IC=10A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 IC=10A, V+=400V VCC=15V, L=2mH, TJ=150C Energy losses include "tail" and diode reverse recovery See CT1 IC=15A, V+=400V, VGE=15V TJ=150C, IC=10A, VP=600V V+= 450V VCC=+15V to 0V TJ=150C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 ----s V+= 360V, VCC=+15V to 0V V+= 360V, VGE=15V VCC=+15V to 0V See CT2 See CT3 TJ=150C, VP=600V, tSC<10s ICSC Short Circuit Collector Current --140 --A See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommende conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol VB1,2,3 VS1,2,3 VCC VT/ITRIP VIN Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage T/ITRIP input voltage Logic input voltage LIN, HIN Min VS+12 Note 4 12 VSS VSS Max VS+20 450 20 VSS+5 VSS+5 Units V V V Note 3: For more details, see IR21365 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAMX20UP60A Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are applicable to all six channels. (Note 3) Symbol VIH VIL VCCUV+, VBSUV+ VCCUV-, VBSUVVCCUVH, VBSUVH VIN, Clamp IQBS IQCC ILK IIN+ IINT/ITRIP+ T/ITRIPV(T/ITRIP) V(T/ITRIP,HYS) Definition Logic "0" input voltage Logic "1" input voltage VCC and VBS supply undervoltage Positive going threshold VCC and VBS supply undervoltage Negative going threshold VCC and VBS supply undervoltage lock-out hysteresis Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10A Quiescent VBS supply current VIN=0V Quiescent VCC supply current VIN=0V Offset Supply Leakage Current Input bias current VIN=5V Input bias current VIN=0V T/ITRIP bias current VITRIP=5V T/ITRIP bias current VITRIP=0V T/ITRIP threshold Voltage T/ITRIP Input Hysteresis Min 3.0 --10.6 10.4 --4.9 --------------3.85 --Typ ----11.1 10.9 0.2 5.2 ------200 100 30 0 4.30 0.07 Max --0.8 11.6 11.4 --5.5 165 3.35 60 300 220 100 1 4.75 --Units V V V V V V A mA A A A A A V V www.irf.com 5 IRAMX20UP60A Thermal and Mechanical Characteristics Symbol Rth(J-C) Rth(J-C) Rth(C-S) CD Parameter Thermal resistance, per IGBT Thermal resistance, per Diode Thermal resistance, C-S Creepage Distance Min ------3.2 Typ 1.5 5 0.1 --Max 2.2 5.5 ----Units Conditions Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK mm See outline Drawings Internal NTC - Thermistor Characteristics Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 97 2.25 4165 -40 1 Typ 100 2.52 4250 Max 103 2.80 4335 125 Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)] Temperature Range Typ. Dissipation constant Input-Output Logic Level Table V+ Hin1,2,3 (15,16,17) IC Driver Ho U,V,W (8,5,2) Lo T/ITRIP 0 0 0 1 HIN1,2,3 0 1 1 X LIN1,2,3 1 0 1 X U,V,W V+ 0 Off Off Lin1,2,3 (18,19,20) 6 www.irf.com IRAMX20UP60A HIN1,2,3 LIN1,2,3 T/ITRIP U,V,W Figure1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% T/ITRIP U,V,W 50% 50% TT/ITRIP TFLT-CLR Figure 2. ITrip Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMX20UP60A Module Pin-Out Description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Name VB3 U, VS3 NA VB2 V,VS2 NA VB1 W,VS1 NA V + Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage none Positive Bus Input Voltage none Low Side Emitter Connection - Phase 1 Low Side Emitter Connection - Phase 2 Low Side Emitter Connection - Phase 3 Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Temperature Monitor and Shut-down Pin +15V Main Supply Negative Main Supply NA LE1 LE2 LE3 HIN1 HNI2 HIN3 LIN1 LIN2 LIN3 T/ITRIP VCC VSS 1 23 8 www.irf.com IRAMX20UP60A Typical Application Connection IRAMX20UP60A 22ohm 1 BOOT-STRAP CAPACITORS U 3-Phase AC MOTOR CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN 15F 2.2F IRAMX20UP60A V W V+ DC BUS CAPACITORS PHASE LEG CURRENT SENSE 035-Z2L03 CONTROLLER T/ITRIP VDD(15 V) VSS 23 O/C SENSE (ACTIVE LOW) TEMP SENSE 15 V 1F 10F 0.1F 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. Current sense signal can be obtained from pin 20 and pin 23. 5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 7. Fault/Enable pin must be pulled-up to +5V. www.irf.com 9 IRAMX20UP60A 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Maximum Output Phase RMS Current - A TC = 100C TC = 110C TC = 120C TJ = 150C Sinusoidal Modulation 0 2 4 6 8 10 12 14 16 18 20 PWM Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency V+=400V , TJ=150C, Modulation Depth=0.8, PF=0.6 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Maximum Output Phase RMS Current - A TJ = 150C Sinusoidal Modulation FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency V+=400V, TJ=150C, TC=100C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMX20UP60A 180 160 Total Power Losses - W 140 120 100 80 60 40 20 0 0 2 IOUT = 8 ARMS IOUT = 10 ARMS TJ = 150C Sinusoidal Modulation 4 6 8 10 12 14 16 18 20 IOUT = 12 ARMS PWM Switching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation V+=400V , TJ=150C, Modulation Depth=0.8, PF=0.6 220 200 Total Power Losses - W 180 160 140 120 100 80 60 40 20 0 0 1 TJ = 150C Sinusoidal Modulation FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150C, Modulation Depth=0.8, PF=0.6 www.irf.com 11 IRAMX20UP60A Maximum Allowable Case Temperature -C 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz TJ = 150C Sinusoidal Modulation 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Output Phase Current - ARMS Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase 160 IGBT Junction Temperature - C 150 140 130 120 110 100 TJ avg. = 1.5840 x TTherm+ 3.2861 68 70 72 74 76 78 80 82 84 86 88 90 92 94 96 98 100 Internal Thermistor Temperature Equivalent Read Out - C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature 12 www.irf.com IRAMX20UP60A 5.5 Thermistor Pin Read-Out Voltage - V 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 TTHERM C -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 RTHERM 4397119 3088599 2197225 1581881 1151037 846579 628988 471632 357012 272500 209710 162651 127080 TTHERM C 25 30 35 40 45 50 55 60 65 70 75 80 85 RTHERM 100000 79222 63167 50677 40904 33195 27091 22224 18322 15184 12635 10566 8873 TTHERM C 90 95 100 105 110 115 120 125 130 135 140 145 150 RTHERM 7481 6337 5384 4594 3934 3380 2916 2522 2190 1907 1665 1459 1282 +VCC (15V) Min Avg. Max RTHERM VTHERM 12 kohm R EXT 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Thermistor Temperature - C Figure 9. Thermistor Readout vs. Temperature (7.5kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table. 16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0 5 10 15 20 4.7F 3.3F 6.8F 10F +15V HIN LIN RBS Recommended Bootstrap Capacitor - F 15F V+ DBS vB VCC HIN LIN VSS COM VSS HO VS RG2 LO U,V,W CBS RG1 GND PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAMX20UP60A Figure 11. Switching Parameter Definitions VCE 50% HIN /LIN IC IC 90% IC VCE 90% IC 50% VCE 50% HIN /LIN HIN /LIN HIN /LIN 50% VCE 10% IC 10% IC tr TON Figure 11a. Input to Output propagation turn-on delay time. tf TOFF Figure 11b. Input to Output propagation turn-off delay time. IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery. 14 www.irf.com IRAMX20UP60A V+ 5V Ho IN Hin1,2,3 IC Driver Lo U,V,W IO Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Hin1,2,3 1k VCC 5VZD IN 10k Lin1,2,3 IC Driver Ho IN U,V,W Lo IO Io Figure CT2. S.C.SOA Circuit V+ Hin1,2,3 1k VCC 5VZD Lin1,2,3 IN 10k IC Driver Ho IN U,V,W Lo IO Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMX20UP60A Package Outline IRAMX20UP60A note 2 62 3 56 A note 3 B O3.4 TYP. 25.3 1 note 1 2 TYP. 23 0.80 0.55 9 O0.20 M AB TYP. 0.70 0.45 TYP. 11.4 REF INT. 4.7 R0.6 TYP. 5.0 2 TYP. 3.2 MIN. CONVEX ONLY 22 PITCHES = 44 11.4 IRAMX20UP60A IRAMX16UP60B 25.8 035-Z2L03 5.5 C 50 0.10 C Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.10mm typical. For mounting instruction see AN-1049 16 www.irf.com 9.0 REF. 46.2 INT. 2.5 IRAMX20UP60A Package Outline IRAMX20UP60A-2 note 2 62 3 O3.4 TYP. 56 A note 3 B 25.3 11.4 IRAMX20UP60A IRAMX16UP60B note 1 25.8 035-Z2L03 1 23 0.80 0.55 13.9 0.70 0.45 2 TYP. O0.20 M AB TYP. TYP. 5 46.2 5.5 C 5 REF. 2.5 50 2 TYP. R0.6 TYP. 10 REF . 3.2 MIN. CONVEX ONLY 0.10 C Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.10mm typical. For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 03/05 www.irf.com 11.4 REF 22 PITCHES = 44 4.7 11.4 REF. 17 |
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