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| ADVANCE INFORMATION Data Sheet No.PD60181 IR3310 PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH Features * * * * * * Load current feedback Programmable over current shutdown Active clamp E.S.D protection Input referenced to Vcc Reverse battery protection (reverse current operation) Product Summary Rds(on) V cc.op. Current ratio Ishutdown Active clamp Packages 5m typ. 5.5 to 35V 10 000 10 to 100A 40V Description The IR 3310 is a Fully Protected 4 terminal high side switch. The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified Vih threshold, the output power MOSFET is turned-on. When Vcc - Vin is lower than the specified Vil threshold, the output MOSFET is turned-off. A sense current proportional to the current in the power Mosfet is sourced to the ST pin. Over-current shutdown occurs when Vst - Vin > 4 V. Choosing Rst allows to adjust Isd. Either over-current and over-temperature latches off the switch. The device is reset by pulling the input pin high. Other integrated protections ( ESD, reverse battery, active clamp ) make the IR 3310 very rugged and suitable for the automotive environment. 5 Lead D2PAK IR3310S 5 Lead TO220 IR3310 Typical Connection VCC + Bat. 40V Active Clamp Reverse battery circuitry 3mA IN 100 70V + - S R Q Level Shifter Charge Pump driver OUT I in=3mA Over temperature TJ > 165C 6V IST=Iload / ratio I load + - 70V + 4V - 100 LOAD 0.1 to 10 Power Gnd Close this switch to turn-on the power Mosfet and activate load Logic Gnd Vst ( 0 to 4V ) 0.5 to 5 k ST I st =I load / ratio Logic Gnd www.irf.com 1 IR3310 Absolute Maximum Ratings Absolute maximum ratings indicates sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Vcc lead. (TAmbient = 25oC unless otherwise specified). Symbol Vcc - Vin max Vcc-Vst max Vcc - Vout max. Ids cont. Ids1 cont Ids pulsed ESD 1 ESD 2 Pd TJ max. Min R st Parameter Maximum input voltage Maximum status voltage Maximum output voltage Diode max. permanent current (Rth = 60 C/W) (1) Diode max. permanent current (Rth = 5 C/W) (1) Diode max. pulsed current (1) Electrostatic discharge ( human body model ) Electrostatic discharge ( machine model ) Power dissipation ( Rth = 62 C/W ) Max. storage and junction temperature Minimum resistor on the ST pin Min. -16 -16 -0.3 -- -- -- -- -- -- -40 0.5 Max. 50 50 37 2.8 35 100 tbd tbd 2 150 -- Units V A kV W C k Thermal Characteristics Symbol Rth free air Rth std footprint Rth1" footprint Rth junct. to case Parameter Thermal resistance - free air Thermal resistance with standard footprint Thermal resistance with 1" footprint Thermal resistance junction to case Typ. 60 80 50 5 Max. -- -- -- Units C/W C/W C/W C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Vcc - Vin Vcc-Vst Vcc Iout Iout 85C amb. Rst Parameter Continuous input voltage Continuous status voltage Supply to power ground voltage Continuous output current ( Rth/amb < 5 C/W, Tj = 125C) Continuous output current ( Rth/amb < 5 C/W, Tj = 125C) ST resistor to program Isd and scale (2 & 3) Min. 6 0 6 -- -- 0.5 Max. 18 18 18 35 8 5 Units V A k Protection Characteristics Symbol Vst - Vin @ Isd Tsd Treset Tj = 25oC (unless otherwise specified), Rst = 500 to 5kOhm. Parameter Over-current shutdown threshold Over-temp. shutdown threshold Protection reset time Typ. 4 165 50 Max. -- -- -- Units V C S Test Conditions see Fig. 4 see Fig. 4 1) Limited by junction temperature. Pulsed current is also limited by wiring 2) <500 Ohm or shorting ST to gnd may damage the part with Isd around 120A 3) >5000 Ohm or leaving ST open will shutdown the part. No current will flow in the load. 2 WWW.IRF.COM IR3310 Static Electrical Characteristics (Tj = 25oC, Vcc = 14V unless otherwise specified.) Symbol Iq Iin Vih Vil Vhys Rds1 on Rds2 on Rds3 on Vclamp1 Vclamp2 Vsd Parameter Quiescent current Input current High level input threshold voltage (4) Low level input threshold voltage (4) Input hysterisis = Vih-Vil ON state resistance ON state resistance ON state resistance Vcc to Vout active clamp voltage Vcc to Vout active clamp voltage Body diode forward voltage Min. -- -- -- -- -- -- -- -- 37 -- -- Typ. 7 3 5 4 1 5 5.5 8 40 42 0.85 Max. Units Test Conditions 50 -- -- -- -- -- -- -- -- 48 1 uA mA V Iout=35A, Vcc=14V Iout=17A, Vcc-Vin=6V Iout=35A, Tj = 150oC Iout = 10mA Iout = 35mA Id=35A, Vcc-Vin=0V Vcc-Vin=0, Vcc-Vout=12V Vcc-Vin=14V m V Switching Electrical Characteristics Vcc = 14V, Resistive Load = 0.4, Tj = 25oC, (unless otherwise specified). Symbol Parameter Turn-on delay time to Vcc-Vout= 0.9 Vcc Rise time to Vcc-Vout=5V Rise time from end of Tr1 to Vout = 10% of Vcc dV/dt (on) Turn ON d V/dt Eon Turn ON energy Toff Turn-off delay time Tf Fall time to Vcc-Vout 90% of Vcc dV/dt (off) Turn OFF d V/dt Eoff Turn OFF energy Ton Tr1 Tr2 Min. -- -- -- -- -- -- -- -- -- Typ. Max. Units Test Conditions 10 16 300 1.2 40 tbd tbd tbd 5 -- -- -- -- -- -- -- -- -- s see figure 2 V/s mJ s V/s mJ see figure 3 Current Sense Characteristics Symbol Parameter Ratio Ratio offset offset Trst I load / I status Gain variation over temperature range error ToC status current when I load = 0 Offset variation over temperature range var. ToC status response time to a small I load step Min. -- -5 -0.5 -0.4 Typ. 10,000 -- 0 0 10 Max. Units Test Conditions -- +5 +0.5 0.4 -- % mA mA s Tj = 25oC ,Rst = 500, I = 100A Tj = 40 T0 +150oC Tj = 25oC ,Rst = 500, I = 100A Tj = 40 T0 +150oC to get 90% of the I load step 4) Input threshold are measured directly between the input pin and the tab. Any parasitic resistance in common between the load current path and the input signal path can significantly affect the thresholds. WWW.IRF.COM 3 IR3310 Lead Assignments 1 - In 2 - ST 3 - Vcc (tab) 4 - NC 5 - Out 12345 12345 5 Lead - TO220 IR3310 Part Number 5 Lead - SMD220 IR3310S The following note applies to all curves: 1) they are all typical characteristics. 2) Operation in shaded area is not recommended. 3) Tj = 25C, Rst=500Ohm, Vbat =14V (unless otherwise specified). Vcc-Vin Vcc-Vin max Vcc-Vin1 max Vcc-Vin (op) Vih Vil Vhys Iin Iin Vcc In IPS xxx Vcc-Vout Vcc-Vout max Vclamp1 Vclamp2 Vcc-Vin Vcc 90% max Iin1,2 Iin(on) St Ist Out Iout Iout max -Ids cont. -Ids pulsed Iout 85C Isd Iq Vcc-Vout 5V 10 % DV/dt(on) Tr2 Td on Tr1 Figure 1 - Voltages and currents definition Figure 2 - Switching time definitions (turn-on) 4 WWW.IRF.COM IR3310 Vcc-Vin Vcc-Vin 12V 0V 90% Iout OI shutdown Isd t < T reset t > T reset Vcc-Vout 10 % DV/dt(off) Td off Tf Tj OT shutdown Tjsd Figure 3 - Switching time definitions (turn-off) Figure 4 - Protection timing diagram Vin Vcc Vin T clamp Ids T clamp Vcc I Load T2 T1 Vst Vout Vcc-Vclamp ( see Design tip to evaluate power dissipation ) accurate measurement Fig 6 - Current sensing accuracy: Figure 5 - Active clamp waveform Measurement is accurate only when the power Mosfet is fully on (outside T1=Tdon + Tr1+Tr2) and when the part is not in the active clamp (outside T2 ). WWW.IRF.COM 5 IR3310 10 6 5 4 1 3 2 1 0.1 0 10 20 30 40 50 60 70 80 0 0 5 10 15 20 25 30 Figure 7 - Icc (mA) vs Vcc-Vin (V) Figure 8 - Rdson (m) vs Vcc-Vin (V) 200 180 160 140 120 100 80 60 -50 6 10 8 6 4 2 0 0 25 50 75 100 125 -25 0 25 50 75 100 125 150 Isense m in isense typ Isense m ax Figure 9 - Normalized Rdson (%) vs Tj (oC) Figure 10 - I sense (mA) vs I load (A) WWW.IRF.COM IR3310 100 Limited by package 6 5 80 Rthc/amb= 1C/W 4 3 60 5C/W 10C/W 20C/W 2 1 0 -50 -25 0 25 50 75 100 125 150 40 20 Free air 0 25 50 75 100 125 150 Figure 11 -Isd (A) vs Rst () Figure 12 - Vst -Vin (V) vs Tj ( oC) 100 Limited by package 1000 100 80 60 40 20 Rthc/amb=1oC/W single pulse 10 Hz rth=60C/W dT=25C 100Hz rth=60C/W dT=25C 1kHz rth=60C/W dT=25C 5oC/W 10o C/W 20oC/W 10 1 Free air 0 25 50 75 100 125 150 0.1 0.001 0.01 0.1 1 10 100 Figure 13 - Max. Cont. Iout (A) vs Temp. (C) Figure 14 - Max. Iout (A) vs load inductance (uH) WWW.IRF.COM 7 IR3310 1000 T=25C free air/ std. footprint T=100C free air/ std. footprint 1000 Free air 100 100 10 1''square footprint 10 1 Infinite heatsink 0.1 1 1E- 05 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 1E- 05 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 15 - I out (A) vs Protection resp. Time (s) Figure 16 - Transient Rth (oC) vs Time (s) How to use the IR 3310 device * Check max. continuous power dissipation : Use figure 11 to check that max. continuous load current does not exceed the device capability in worst case ambient temperature. * * Choose Isd so that it exceeds the maximum transient current with a sufficient margin. I max. load shall not exceed 100A. Choose Rst to get Isd by mean of fig. 10 curve or using the following formula Isd = (Vst-Vin @ Isd) * gain / Rst = 4V*10000 / Rst. This ensures optimum protection and full scale of Vst signal (0V for I load=0 and 4V for I load = Isd). * To reduce power dissipation during reverse battery operation, the inner circuitry takes the potential available on ST pin in order to turn on the power MOSFET. This principle works only if Rst is within the recommended range ( 0.5 to 5 k ) and Rev.bat. voltage > 5V. Also, the logic Gnd must not be disconnected from the Power Gnd (due to another reverse battery protection circuitry for example). Check that junction temperature does not exceed the max. value (165C) : ( losses multiplied by rth + max. ambient ) <165C. Total Losses ( w ) = Ppower Mosfet + P (in ) + P (st) 8 WWW.IRF.COM IR3310 Case Outline - TO220 (5 lead) IRGB 01-3042 01 WWW.IRF.COM 9 IR3310 Case Outline - D2PAK (SMD220) - 5 Lead 01-3066 00 10 WWW.IRF.COM IR3310 Tape & Reel - SMD220 - 5 Lead 01-3071 00 / 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 3/29/2001 WWW.IRF.COM 11 |
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