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VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com * Pb-Free Packages are Available* 150 mA, 60 V RDS(on) = 7.5 W N-Channel Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 150 1000 400 3.2 -55 to +150 mW mW/C C TO-92 CASE 29 STYLE 22 12 Unit Vdc Vdc Vdc Vpk mAdc G S D MAXIMUM RATINGS Rating Drain -Source Voltage Drain-Gate Voltage (RGS = 1.0 MW) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) Drain Current - Continuous - Pulsed Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RqJA TL Max 312.5 300 Unit C/W C MARKING DIAGRAM & PIN ASSIGNMENT VN22 22LL AYWW 1 Source 3 Drain 2 Gate A Y WW = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2004 1 September, 2004 - Rev. 3 Publication Order Number: VN2222LL/D VN2222LL ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) Gate-Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125C) Drain-Source On-Voltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc) On-State Drain Current (VGS = 10 Vdc, VDS 2.0 VDS(on)) Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1) Turn-On Delay Time Turn-Off Delay Time (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 W, RL = 23 W) ton toff - - 10 10 ns (VDS = 25 Vdc, VGS = 0 Vd 0, f = 1.0 MHz) Ciss Coss Crss - - - 60 25 5.0 pF VGS(th) rDS(on) - - VDS(on) - - 750 100 7.5 13.5 Vdc 1.5 3.75 - - mA mmhos 0.6 2.5 Vdc W V(BR)DSS IDSS - - IGSSF - 10 500 -100 nAdc 60 - Vdc mAdc Symbol Min Max Unit ID(on) gfs 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device VN2222LL VN2222LLG VN2222LLRL VN2222LLRLRA VN2222LLRLRAG VN2222LLRLRM Package TO-92 TO-92 (Pb-Free) TO-92 TO-92 TO-92 (Pb-Free) TO-92 Shipping 1000 Unit / Box 1000 Unit / Box 1000 Unit / Box 2000 Tape & Reel 2000 Tape & Reel 2000 Unit / Ammo Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 VN2222LL 2 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 10 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) 0.8 0.6 0.4 0.2 VDS = 10 V -55 C 125C 1 25C Figure 1. Ohmic Region r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) Figure 2. Transfer Characteristics 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 0 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1 mA Figure 3. Temperature versus Static Drain-Source On-Resistance Figure 4. Temperature versus Gate Threshold Voltage http://onsemi.com 3 VN2222LL PACKAGE DIMENSIONS TO-92 CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 VN2222LL/D |
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