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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF21090/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power -- 11.5 Watts Efficiency -- 16% Gain -- 12.2 dB ACPR -- - 45 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21090R3 MRF21090SR3
2170 MHz, 90 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465B - 03, STYLE 1 NI - 880 MRF21090R3
CASE 465C - 02, STYLE 1 NI - 880S MRF21090SR3
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, - 0.5 270 1.54 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 0.65 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 6
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF21090R3 MRF21090SR3 1
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model MRF21090R3 MRF21090SR3 MRF21090R3 MRF21090SR3 Class 2 (Minimum) 1 (Minimum) M3 (Minimum) M4 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 300 A) Gate Quiescent Voltage (VDS = 28 V, ID = 750 mA) Drain - Source On - Voltage (VGS = 10 V, ID = 1 A) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output.
gfs VGS(th) VGS(Q) VDS(on)
-- 2 3 --
7.2 3 3.8 0.1
-- 4 5 0.6
S Vdc Vdc Vdc
Crss
--
4.2
--
pF
Gps
10
11.7
--
dB
30
33
--
%
IMD
--
- 30
- 27.5
dBc
IRL
--
- 12
- 9.0
dB
Gps
-- --
11.7 41
-- --
dB %
No Degradation In Output Power Before and After Test
MRF21090R3 MRF21090SR3 2
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
R2
B1 VGG + C1 + C2 C3 C4 R1 Z11 + C7 C8 C9 + C10 C11 + C13
V DD
RF OUTPUT Z10 RF INPUT Z1 C5 C6 Z2 Z3 Z4 Z5 DUT Z6 Z7 Z8 C12 C14 Z9
Freescale Semiconductor, Inc...
B1 C1, C13 C2, C10 C3, C9 C4, C8 C5, C12 C6 C7 C11 C14 R1 R2 Z1 Z2 Z3 Z4 Z5 Z6
Ferrite Bead, Fair Rite #2743019447 470 F, 50 V Electrolytic Capacitors 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 20 nF Chip Capacitors, ATC #100B203MCA500X 5.1 pF Chip Capacitors, ATC #100B5R1CCA500X 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitor, ATC #100B100JCA500X 1 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1 nF Chip Capacitor, ATC #100B102JCA500X 8.2 pF Chip Capacitor, ATC #100B8R2CCA500X 13 , 1/4 W Chip Resistor, Garret Instrument #RM73B2B130JT, 12 , 1/4 W Chip Resistor, Garret Instrument #RM73B2B120JT 30.7 x 2.09 mm Microstrip 5.99 x 2.09 mm Microstrip 7.55 x 9.89 mm Microstrip 3.77 x 15.71 mm Microstrip 6.89 x 26.17 mm Microstrip 14.93 x 32.05 mm Microstrip
10.23 x 2.09 mm Microstrip 6.03 x 2.09 mm Microstrip 23.98 x 2.09 mm Microstrip 29.82 x 1.15 mm Microstrip 17.08 x 1.15 mm Microstrip Beryllium Copper Wear Blocks 5 mils Thick Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type N Jack Connectors, 3052 - 1648 - 10, Omni Specra 4 - 40 Head Screws 0.125 Long 4 - 40 Head Screws 0.188 Long 4 - 40 Head Screws 0.312 Long 4 - 40 Head Screws 0.438 Long Endplates Brass Endplates for Copper Bedstead Bedstead Copper Bedstead/Heatsink Insert Copper Bedstead Insert Raw PCB 0.030 Glass Teflon, 2 oz Copper Clad 3 x 5 Arion RF Circuit 3 x 5 Copper Clad PCB Teflon, MRF21090, CMR
Z7 Z8 Z9 Z10 Z11 WS1, WS2
Figure 1. MRF21090R3(SR3) Test Circuit Schematic
C7 C8 Gate Bias Feed C3 C4 C1 C2 C6 C5 C U T O U T
B1
Drain Bias Feed
R1
R2 C9 C11 C10 C13
C14 C12
MRF21090
Figure 2. MRF21090R3(SR3) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF21090R3 MRF21090SR3 3
Freescale Semiconductor, Inc.
TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE)
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) 60 50 IRL -5 -10 -15 VDD = 28 Vdc Pout = 90 W (PEP) IDQ = 750 mA Two-Tone Measurement 100 kHz Tone Spacing -20 -25 -30 IMD 0 -35 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 30 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) ACPR 15 Gps 0 5.0 10 15 Pout, OUTPUT POWER (WATTS) AVG. 20 -50 -20 ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc)
25
-30
40 30 20 Gps 10
20
-40
10 5
-60 -70
Freescale Semiconductor, Inc...
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc f = 2140 MHz -30 Two-Tone Measurement 100 kHz Tone Spacing -35
IMD, INTERMODULATION DISTORTION (dBc)
-25
-20 -30 -40 -50 -60 -70 -80 VDD = 28 Vdc IDQ = 750 mA f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing
500 mA 2000 mA 1500 mA
3rd Order 5th Order 7th Order
-40 -45 -50 -55 800 mA 1000 mA
1
10 Pout, OUTPUT POWER (WATTS) PEP
100
1
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus Output Power
Figure 6. Intermodulation Distortion Products versus Output Power
15 VDD = 28 Vdc f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing
11.8 11.6 G ps, POWER GAIN (dB) 11.4 11.2 11.0 10.8 500 mA IMD 100 10.6 20 22 24 26 28 30 VDS, DRAIN VOLTAGE (VOLTS) 32 34 Pout = 90 W (PEP) IDQ = 750 mA f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing Fixture Tuned for 28 Volts
-22 -24 -26 -28 -30 -32 -34
14 G ps, POWER GAIN (dB)
2000 mA 1500 mA
13
12
1000 mA 800 mA
Gps
11 10
1
10 Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA RF DEVICE DATA
MRF21090R3 MRF21090SR3 4
For More Information On This Product, Go to: www.freescale.com
Freescale Semiconductor, Inc.
Zo = 5
f = 2170 MHz Zload
2110 MHz Zsource 2170 MHz
Freescale Semiconductor, Inc...
f = 2110 MHz
VDD = 28 V, IDQ = 750 mA, Pout = 90 W (PEP) f MHz 2110 2140 2170 Zsource 3.03 - j3.40 3.02 - j3.46 2.60 - j3.50 Zload 0.92 - j1.67 0.97 - j1.80 0.90 - j1.52
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF21090R3 MRF21090SR3 5
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MRF21090R3 MRF21090SR3 6
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B G 4
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
K D TA
2
bbb
M
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW.
R M bbb
M (INSULATOR)
(LID) M (INSULATOR) M
ccc
M
TA
M
B S
TA TA
M
B B
M
Freescale Semiconductor, Inc...
N ccc H
M M M
(LID)
aaa
M
TA
M
B
C E A
(FLANGE)
F
T A
SEATING PLANE
CASE 465B - 03 ISSUE C NI - 880 MRF21090R3
DIM A B C D E F G H K M N Q R S aaa bbb ccc
INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF
MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
B
1
(FLANGE)
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B
M (INSULATOR)
M bbb ccc H C
M
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
DIM A B C D E F H K M N R S aaa bbb ccc
F E A
(FLANGE)
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
T A
SEATING PLANE
CASE 465C - 02 ISSUE A NI - 880S MRF21090SR3
MOTOROLA RF DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
MRF21090R3 MRF21090SR3 7
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF21090R3 MRF21090SR3 8
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE MRF21090/D DATA


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