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| Fast Recovery Diodes (FRD) MA111 MA649 Silicon planer type (cathode common) 0.70.1 For switching s Features q q Unit : mm 10.00.2 5.50.2 2.70.2 4.20.2 Low forward voltage V F Fast reverse recovery time trr 16.70.3 q High reverse voltage VR 7.50.2 o3.10.1 4.20.2 1.40.1 1.30.2 0.5 -0.1 0.80.1 +0.2 14.00.5 Solder Dip 4.0 2.540.25 s Absolute Maximum Ratings (Ta= 25C) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature * Sine half wave : 10ms/cycle 5.080.5 Symbol VRRM VRSM IF(AV) IFSM* Tj Tstg Rating 200 200 5 30 - 40 to +150 - 40 to +150 Unit V V A A C C 1 : Anode 2 : Cathode (common) 3 : Anode TO-220F(a) (TO-220 Full-Pack Package) 1 2 3 s Internal Connection 1 2 3 s Electrical Characteristics (Ta= 25C) Parameter Repetitive peak reverse current Forward voltage (DC) Reverse recovery time Thermal resistance Symbol IRRM1 IRRM2 VF trr* Rth(j-c)* Rth(j-a) Condition VRRM= 200V, TC= 25C VRRM= 200V, Tj=150C IF= 2.5A, TC= 25C IF=1A, IR=1A Flat direct current between junction and case min typ max 100 6 1 100 3 63 Unit A mA V ns C/W C/W Note 1. Rated input/output frequency : 10MHz 2. * trr measuring circuit 50 D.U.T 50 IF IR 5.5 trr 0.1 x IR Fast Recovery Diodes (FRD) MA649 IF - VF 100 TC=25C 107 IR - VR 12 PD(AV) - IF(AV) Ta=150C IR (nA) (A) 10 105 100C Average forward current PD(AV) (W) 106 10 t0 t1 8 t0/t1=1/6 6 Forward current IF 1 Ta=150C 25C Reverse current 104 100C 0.1 103 1/3 1/2 DC 25C 4 102 2 0.01 0 0.4 0.8 1.2 VF 1.6 (V) 2.0 Forward voltage 10 0 50 100 150 200 250 300 Reverse voltage VR (V) 0 0 1 2 3 4 5 6 Average forward current IF(AV) (A) IF(AV) - TC 6 t0/t1=1/2 Rth(t) - t 102 Without heat sink (A) 5 Thermal resistance Rth (C/W) 1/3 1/6 4 DC Average forward current IF(AV) 10 3 1 2 10-1 1 t0 t1 0 30 50 100 TC (C) 150 10-2 10-4 10-3 10-2 10-1 Time 1 t (s) 10 102 103 104 Case temperature |
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