View IRG4PH50KD_283074.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD- 91575B
IRG4PH50KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.77V
@VGE = 15V, IC = 24A
n-ch an nel
Benefits
* Latest generation 4 IGBT's offer highest power density motor controls possible * HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses * This part replaces the IRGPH50KD2 and IRGPH50MD2 products * For hints see design tip 97003
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
1200 45 24 90 90 16 90 10 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
s V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
--- --- --- --- ---
Typ.
--- --- 0.24 --- 6 (0.21)
Max.
0.64 0.83 --- 40 ---
Units
C/W
g (oz)
www.irf.com
1
7/7/2000
IRG4PH50KD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 -- Temperature Coeff. of Breakdown Voltage -- 0.91 Collector-to-Emitter Saturation Voltage -- 2.77 -- 3.28 -- 2.54 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -10 Forward Transconductance T 13 19 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 2.5 -- 2.1 Gate-to-Emitter Leakage Current -- --
Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 3.5 IC = 24A VGE = 15V -- V IC = 45A See Fig. 2, 5 -- IC = 24A, TJ = 150C 6.0 VCE = VGE , IC = 250A -- mV/C VCE = VGE , IC = 250A -- S VCE = 100V, IC = 24A 250 A VGE = 0V, VCE = 1200V 6500 VGE = 0V, VCE = 1200V, TJ = 150C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 180 25 70 87 100 140 200 3.83 1.90 5.73 -- 67 72 310 390 8.36 13 2800 140 53 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 270 IC = 24A 38 nC VCC = 400V See Fig.8 110 VGE = 15V -- -- TJ = 25C ns 300 IC = 24A, VCC = 800V 300 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 7.9 See Fig. 9,10,18 -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, See Fig. 10,11,18 -- IC = 24A, VCC = 800V ns -- VGE = 15V, RG = 5.0, -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 135 ns TJ = 25C See Fig. 245 TJ = 125C 14 I F = 16A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 VR = 200V 675 nC TJ = 25C See Fig. 1838 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17
2
www.irf.com
IRG4PH50KD
30
F o r b o th :
25
LOAD CURRENT (A)
20
S q u a re w a v e :
D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W
6 0% of rate d volta ge
I
15
10
5
Id e a l d io d e s
0 0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
TJ = 150 C
10
T = 150 C J
10
TJ = 25 C
TJ = 25 C
1 1
V = 15V 20s PULSE WIDTH
GE 10
1 5 6 7 8
V = 50V 5s PULSE WIDTH
CC 9 10 11 12
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
www.irf.com
3
IRG4PH50KD
50 4.0
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
40
3.5
IC = 48A
30
3.0
IC = 24A
2.5
20
IC = 12A
2.0
10
0 25 50 75 100 125 150
1.5 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
IRG4PH50KD
4000
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
3000
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 24A
16
Cies
12
2000
8
1000
4
0 1
C oes C res
10 100
0 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
7.0
Total Switching Losses (mJ)
6.6
Total Switching Losses (mJ)
V CC = 800V 960V V GE = 15V TJ = 25 C I C = 24A
100
5.0 RG = Ohm VGE = 15V 800V VCC = 960V
IC = 48 A
10
6.2
IC = 24 A IC = 12 A
5.8
5.4 0 10 20 30 40 50
1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG RG , Gate Resistance ( ) , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
www.irf.com
5
IRG4PH50KD
20
Total Switching Losses (mJ)
15
I C, Collector Current (A)
20 30 40 50
RG TJ VCC CC VGE
= 5.0 Ohm = 150 C = 800V 960V = 15V
1000
VGE = 20V T J = 125 o C
100
10
10
5
0 0 10
SAFE OPERATING AREA
1 1 10 100 1000 10000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector Current
1000
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
100
T J = 150C
10
T J = 125C T J = 25C
1 0.0 2.0 4.0 6.0 8.0
F orward V oltage D rop - V F M (V )
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
6
www.irf.com
IRG4PH50KD
300 40
VR = 200V T J = 125C T J = 25C
30 200
VR = 200 V T J = 125C T J = 25C
I F = 1 6A I F = 8 .0 A
I R R M - (A )
trr - (ns)
IF = 3 2 A
20
I F = 32A I F = 16 A I F = 8 .0A
100 10
0 100
d i f /dt - (A / s)
1000
0 100
di f /dt - (A / s)
1000
Fig. 14 - Typical Reverse Recovery vs. dif/dt
1200
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
VR = 2 00 V T J = 125C T J = 25C
900
VR = 200V T J = 125C T J = 25C
600
I F = 16A
d i(rec )M /d t - (A / s)
I F = 3 2A
Q R R - (nC )
100
I F = 32 A I F =1 6A I F = 8 .0 A
I F = 8 .0A
300
0 100
di f /d t - (A / s)
1000
10 100
1000
di f /d t - (A / s)
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
www.irf.com
7
IRG4PH50KD
90% Vge +Vge
Same ty pe device as D .U.T.
V ce
Ic 80% of Vce 430F D .U .T.
10% Vce Ic
9 0 % Ic 5 % Ic
td (o ff)
tf
E o ff =
t1 + 5 S V c e ic d t t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
icdt
trr id d t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t1
Vcicdt
t4 V d id d t t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
www.irf.com
IRG4PH50KD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 600 0F 100V Vc*
D.U.T.
RL= 0 - 480V
960V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
www.irf.com
9
IRG4PH50KD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
Case Outline TO-247AC
3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 )
-A5 .5 0 (.2 17 )
-D-
1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-
M
DBM
5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4
NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C .
2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3
2X
5.5 0 (.2 1 7) 4.5 0 (.1 7 7)
-C-
LEAD 1234-
A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R
*
1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 )
4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )
*
3X C AS
2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X
LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER
3X
1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)
D im e n s io n s in M illim e te rs a n d (In c h e s )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00
10
www.irf.com

▲Up To Search▲

Price & Availability of IRG4PH50KD

	To Download IRG4PH50KD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .