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INDEX PRELIMINARY
MX27C8111
FEATURES
8M-BIT [1M x8/512K x16] CMOS OTP ROM WITH PAGE MODE * * * *
Completely TTL compatible Operating current: 60mA Standby current: 100uA Package type: - 42 pin plastic DIP - 44 pin SOP
* * * * * *
With Page Mode function, 8-word/16-byte page 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time:90/100/120/150 ns Page mode access time 50/60/75 ns Totally static operation
GENERAL DESCRIPTION
The MX27C8111 is a 8M-bit, One Time Programmable Read Only Memory with page mode. It is organized as 1M x 8 or 512K x 16, operates from a single + 5 volt supply, has a static standby mode, and features fast single address location programming. All programming signals are TTL levels, requiring a single pulse. For programming outside from the system, existing EPROM programmers may be used. The MX27C8111 supports a intelligent fast programming algorithm which can result in programming time of less than two minutes. MX27C8111 provides Page Read Access Mode which can greatly reduce the read access time. Normal read access time and Page Mode read access time is as fast as 90/50ns. It is designed to be compatible with all microprocessors and similar applications in which high perofmrance, large bit storage and simple interfacing are important design considerations. This One Time Programmable Read Only Memory is packaged in industry standard 42 pin dual-in-line plastic package and 44 pin SOP packages.
PIN CONFIGURATIONS
PDIP
A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 NC A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE/VPP GND Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC
SOP
NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE/VPP GND Q15/A1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC
P/N: PM0329
MX27C8111
MX27C8111
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MX27C8111
PIN DESCRIPTION
SYMBOL A0~A18 Q0~Q14 CE OE BYTE/VPP PIN NAME Address Input Data Input/Output Chip Enable Input Output Enable Input Word/Byte Selection /Program Supply Voltage Q15/A-1 VCC GND Q15(Word mode)/LSB addr. (Byte mode) Power Supply Pin (+5V) Ground Pin
VCC GND A0~A18 ADDRESS INPUTS . . . . . . . . Y-DECODER . . . . X-DECODER . . . . Y-SELECT
BLOCK DIAGRAM
CE OE BYTE/VPP CONTROL LOGIC OUTPUT BUFFERS Q0~Q14 Q15/A-1
8M BIT CELL MAXTRIX
TRUTH TABLE OF BYTE FUNCTION
BYTE MODE(BYTE = GND)
CE H L L OE X H L Q15/A-1 X X A-1 input MODE Non selected Non selected Selected Q0-Q7 High Z High Z DOUT SUPPLY CURRENT Standby(ICC2) Operating(ICC1) Operating(ICC1)
WORD MODE(BYTE = VCC)
CE H L L NOTE : X = H or L OE X H L Q15/A-1 High Z High Z DOUT MODE Non selected Non selected Selected Q0-Q14 High Z High Z DOUT SUPPLY CURRENT Standby(ICC2) Operating(ICC1) Operating(ICC1)
P/N: PM0329
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MX27C8111
FUNCTIONAL DESCRIPTION
THE PROGRAMMING OF THE MX27C8111 When the MX27C8111 is delivered, the chip has all 8M bits in the "ONE" or HIGH state. "ZEROs" are loaded into the MX27C8111 through the procedure of programming. For programming, the data to be programmed is applied with 16 bits in parallel to the data pins. Vcc must be applied simultaneously or before Vpp, and removed simultaneously or after Vpp. When programming an MXIC One Time Programmable Read Only Memory, a 0.1uF capacitor is required across Vpp and ground to suppress spurious voltage transients which may damage the device. AUTO IDENTIFY MODE The auto identify mode allows the reading out of a binary code from an One Time Programmable Read Only Memory that will identify its manufacturer and device type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25 5 ambient temperature range that is required C C when programming the MX27C8111. To activate this mode, the programming equipment must force 12.0 0.5 V on address line A9 of the device. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during auto identify mode. Byte 0 ( A0 = VIL) represents the manufacturer code, and byte 1 (A0 = VIH), the device identifier code. For the MX27C8111, these two identifier bytes are given in the Mode Select Table. All identifiers for manufacturer and device codes will possess odd parity, with the MSB (Q15) defined as the parity bit.
FAST PROGRAMMING The device is set up in the fast programming mode when the programming voltage VPP = 12.75V is applied, with VCC = 6.25 V and OE = VIH (Algorithm is shown in Figure 1). The programming is achieved by applying a single TTL low level 50us pulse to the CE input after addresses and data line are stable. If the data is not verified, an additional pulse is applied for a maximum of 25 pulses. This process is repeated while sequencing through each address of the device. When the programming mode is completed, the data in all address is verified at VCC = VPP = 5V 10%.
READ MODE The MX27C8111 provides page mode with 8 words/16 bytes per page. In order to get the benefit of fast page read, the user should keep chip enable(CE) low and toggle address A0~A2 in word mode or A-1~A2 in byte mode. Page Read access time(tPA) is equal to the delay from address stable to data output. It is twice as fast as normal tACC and is highly recommended.
PROGRAM INHIBIT MODE Programming of multiple MX27C8111's in parallel with different data is also easily accomplished by using the Program Inhibit Mode. Except for CE and OE, all like inputs of the parallel MX27C8111 may be common. A TTL low-level program pulse applied to an MX27C8111 CE input with VPP = 12.5 0.5 V will program the MX27C8111. A high-level CE input inhibits the other MX27C8111s from being programmed. PROGRAM VERIFY MODE Verification should be performed on the programmed bits to determine that they were correctly programmed. The verification should be performed with OE at VIL, CE at VIH, VPP at its programming voltage.
WORD-WIDE MODE With BYTE/VPP at VCC 0.2V outputs Q0-7 present data Q0-7 and outputs Q8-15 present data Q8-15, after CE and OE are appropriately enabled.
BYTE-WIDE MODE With BYTE/VPP at GND 0.2V, outputs Q8-15 are tristated. If Q15/A-1 = VIH, outputs Q0-7 present data bits Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data bits Q0-7.
P/N: PM0329
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MX27C8111
STANDBY MODE The MX27C8111 has a CMOS standby mode which reduces the maximum VCC current to 100 uA. It is placed in CMOS standby when CE is at VCC 0.3 V. The MX27C8111 also has a TTL-standby mode which reduces the maximum VCC current to 1.5 mA. It is placed in TTL-standby when CE is at VIH. When in standby mode, the outputs are in a high-impedance state, independent of the OE input. SYSTEM CONSIDERATIONS During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1 uF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between Vcc and GND to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on One Time Programmable Read Only Memory arrays, a 4.7 uF bulk electrolytic capacitor should be used between VCC and GND for each eight devices. The location of the capacitor should be close to where the power supply is connected to the array.
TWO-LINE OUTPUT CONTROL FUNCTION To accommodate multiple memory connections, a twoline control function is provided to allow for: 1. Low memory power dissipation, 2. Assurance that output bus contention will not occur. It is recommended that CE be decoded and used as the primary device-selecting function, while OE be made a common connection to all devices in the array and connected to the READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular memory device.
MODE SELECT TABLE
BYTE/ MODE Read (Word) Read (Upper Byte) Read (Lower Byte) Output Disable Standby Program Program Verify Program Inhibit Manufacturer Code(3) Device Code(3) CE VIL VIL VIL VIL VIH VIL VIH VIH VIL VIL OE VIL VIL VIL VIH X VIH VIL VIH VIL VIL A9 X X X X X X X X VH VH A0 X X X X X X X X VIL VIH Q15/A-1 Q15 Out VIH VIL High Z High Z Q15 In Q15 Out High Z 0B 1B VPP(5) VCC GND GND X X VPP VPP VPP VCC VCC Q8-14 Q8-14 Out High Z High Z High Z High Z Q8-14 In Q8-14 Out High Z 00H 38H Q0-7 Q0-7 Out Q8-15 Out Q0-7 Out High Z High Z Q0-7 In Q0-7 Out High Z C2H 16H
NOTES: 1. VH = 12.0V 0.5V 2. X = Either VIH or VIL. 3. A1-A8, A10-A18 = VIL(for auto select)
4. See DC Programming Characteristics for VPP voltages. 5. BYTE/VPP is intended for operation under DC Voltage conditions only. 6. Manufacture code = 00C2H Device code = B816H
P/N: PM0329
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MX27C8111
FIGURE 1. FAST PROGRAMMING FLOW CHART
START
ADDRESS = FIRST LOCATION
VCC = 6.25V VPP = 12.75V X=0
PROGRAM ONE 50us PULSE
INTERACTIVE SECTION
INCREMENT X
YES X = 25?
NO
FAIL
VERIFY WORD
?
PASS NO INCREMENT ADDRESS LAST ADDRESS FAIL YES
VCC = VPP = 5.25V
VERIFY SECTION
VERIFY ALL WORDS ?
FAIL
DEVICE FAILED
PASS DEVICE PASSED
P/N: PM0329
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MX27C8111
SWITCHING TEST CIRCUITS
DEVICE UNDER TEST
1.8K ohm +5V
CL 6.2K ohm
DIODES = IN3064 OR EQUIVALENT
CL = 100 pF including jig capacitance
SWITCHING TEST WAVEFORMS
2.0V
AC driving levels
2.0V TEST POINTS 0.8V OUTPUT
0.8V INPUT
AC TESTING: AC driving levels are 2.4V/0.4V. Input pulse rise and fall times are < 10ns.
P/N: PM0329
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MX27C8111
ABSOLUTE MAXIMUM RATINGS
RATING Ambient Operating Temperature Storage Temperature Applied Input Voltage Applied Output Voltage VCC to Ground Potential A9 & VPP VALUE 0oC to 70oC -65oC to 125oC -0.5V to 7.0V -0.5V to VCC + 0.5V -0.5V to 7.0V -0.5V to 13.5V
NOTICE: Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended period may affect reliability. NOTICE: Specifications contained within the following tables are subject to change.
DC/AC Operating Conditions for Read Operation
MX27C8111 -90 Operating Temperature Vcc Power Supply Commercial 0C to 70 C 5V 5% -10 0 to 70C C 5V 10% -12 0C to 70C 5V 10% -15 0 to 70C C 5V 10%
DC CHARACTERISTICS
SYMBOL VOH VOL VIH VIL ILI ILO ICC3 ICC2 ICC1 IPP PARAMETER Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Input Leakage Current Output Leakage Current VCC Power-Down Current VCC Standby Current VCC Active Current VPP Supply Current Read 2.0 -0.3 -10 -10 MIN. 2.4 0.4 VCC + 0.5 0.8 10 10 100 1.5 60 10 MAX. UNIT V V V V uA uA uA mA mA uA VIN = 0 to 5.5V VOUT = 0 to 5.5V CE = VCC 0.3V CE = VIH CE = VIL, f=5MHz, Iout = 0mA CE = OE = VIL, VPP = 5.5V CONDITIONS IOH = -0.4mA IOL = 2.1mA
CAPACITANCE TA = 25oC, f = 1.0 MHz (Sampled only)
SYMBOL CIN COUT CVPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance TYP. 8 8 18 MAX. 12 12 25 UNIT pF pF pF CONDITIONS VIN = 0V VOUT = 0V VPP = 0V
P/N: PM0329
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MX27C8111
AC CHARACTERISTICS
27C8111-90 SYMBOL PARAMETER tACC tCE tPA tOE tDF Address to Output Delay Chip Enable to Output Delay Page Address to Output Delay Output Enable to Output Delay OE High to Output Float, or CE High to Output Float tOH Output Hold from Address, CE or OE which ever occurred first tBHA tOHB tBHZ tBLZ BYTE Access Time BYTE Output Hold Time BYTE Output Delay Time BYTE Output Set Time 10 0 70 10 90 0 70 10 100 0 70 10 120 0 70 150 ns ns ns ns 0 0 0 0 ns 0 MIN. MAX. 90 90 50 45 30 0 27C8111-10 MIN. MAX. 100 100 50 45 30 27C8111-12 MIN. 120 120 60 50 0 35 MAX. 27C8111-15 MIN. 150 150 75 65 0 50 MAX. UNIT ns ns ns ns ns CONDITIONS CE = OE = VIL OE = VIL CE = OE =VIL CE = VIL
DC PROGRAMMING CHARACTERISTICS TA = 25oC 5oC
SYMBOL VOH VOL VIH VIL ILI VH ICC3 IPP2 VCC1 VPP1 PARAMETER Output High Voltage Output Low Voltage Input High Voltage Input Low Voltage Input Leakage Current A9 Auto Select Voltage VCC Supply Current (Program & Verify) VPP Supply Current(Program) Fast Programming Supply Voltage Fast Programming Voltage 6.00 12.5 2.0 -0.3 -10 11.5 MIN. 2.4 0.4 VCC + 0.5 0.8 10 12.5 50 30 6.50 13.0 MAX. UNIT V V V V uA V mA mA V V CE = VIL, OE = VIH VIN = 0 to 5.5V CONDITIONS IOH = -0.40mA IOL = 2.1mA
AC PROGRAMMING CHARACTERISTICS TA = 25oC 5oC
SYMBOL tAS tOES tDS tAH tDH tDFP tVCS tVPS tPW tOE
P/N: PM0329
PARAMETER Address Setup Time OE Setup Time Data Setup Time Address Hold Time Data Hold Time Chip Enable to Output Float Delay VCC Setup Time BYTE/VPP Setup Time CE initial Program Pulse Width Data valid from OE
MIN. 2.0 2.0 2.0 0 2.0 0 2.0 2.0
TYP.
MAX.
UNIT us us us us us
CONDITIONS
130
ns us us
50 150
us ns
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MX27C8111
WAVEFORMS
NORMAL READ CYCLE(WORD MODE)
ADDRESS INPUTS
tACC
DATA ADDRESS
CE
tCE
OE
tDF
DATA OUT
tOE
VALID DATA
tOH
PAGE MODE READ CYCLE
A4-A18
VALID ADDRESS
A0~A2 (Word mode) A-1~A2 (Byte mode)
tACC
CE
tPA
tPA
tPA
OE
tOH tOE tDF
DATA OUT
P/N: PM0329
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MX27C8111
WAVEFORMS
NORMAL READ CYCLE(BYTE MODE)
HIGH-Z HIGH-Z
A-1
tACC
tOH
BYTE/VPP
Q0-Q7
VALID DATA
tBHA tOHB
VALID DATA
Q15-Q8
tBHZ tBLZ
VALID DATA
FAST PROGRAMMING ALGORITHM WAVEFORM
PROGRAM VIH
VERIFY
Addresses
VIL
VALID ADDRESS
tAH tAS
DATA
tDS VPP1
DATA SET
tDH
DATA OUT VALID
tDFP
BYTE/VPP
VCC tVPS VCC1
VCC
VCC VIH
tVCS
CE
VIL tPW VIH tOES tOE
OE
VIL
P/N: PM0329
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MX27C8111
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO. ACCESS TIME (ns) MX27C8111MC-90 MX27C8111MC-10 MX27C8111MC-12 MX27C8111MC-15 MX27C8111PC-90 MX27C8111PC-10 MX27C8111PC-12 MX27C8111PC-15 90 100 120 150 90 100 120 150 OPERATING CURRENT MAX.(mA) 60 60 60 60 60 60 60 60 STANDBY CURRENT MAX.(uA) 100 100 100 100 100 100 100 100 44 PIn SOP (ROM pin out) 44 PIn SOP (ROM pin out) 44 Pin SOP(ROM pin out) 44 Pin SOP(ROM pin out) 42 PIn PDIP (ROM pin out) 42 PIn PDIP(ROM pin out) 42 Pin PDIP(ROM pin out) 42 Pin PDIP(ROM pin out) PACKAGE
P/N: PM0329
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MX27C8111
PACKAGE INFORMATION
42-PIN PLASTIC DIP(600 mil)
ITEM A B C D E F G H I J K L M
NOTE:
MILLIMETERS 52.54 max. 0.76 [REF] 2.54 [TP] .46 [Typ.] 50.76 1.27 [Typ.] 3.30 . 25 .51 [REF] 3.94 . 25 5.33 max. 15.22 .25 13.97 .25 .25 [Typ.]
INCHES 2.070 max. .030 [REF] .100 [TP] .018 [Typ.] 2.000 .050 [Typ.] .130 .010 .020 [REF] .155 .010 .210 max. .600 .010 .550 .010 .010 [Typ.]
42
22
1 A
21 J K
I H G
F
D E
C
B
L
M
Each lead centerline is located within .25 mm[.01 inch] of its true position [TP] at maximum material condition.
44-PIN PLASTIC SOP
ITEM A B C D E F G H I J K L
NOTE:
MILLIMETERS 28.70 max. 1.10 [REF] 1.27 [TP] .40 .10 [Typ.] .010 min. 3.00 max. 2.80 .13 16.04 .30 12.60 1.72 .15 .10 [Typ.] .80 .20
INCHES 1.130 max. .043 [REF] .050 [TP] .016 .004 [Typ.] .004 min. .118 max. .110 .005
44
23
1 A
22 H I J
.631 .012 .0496 .068 .006 .004 [Typ.] .031 .008
E D C B L G F
K
Each lead centerline is located within .25 mm[.01 inch] of its true position [TP] at maximum material condition.
P/N: PM0329
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MX27C8111
Revision History Revision No. Description 2.0 2.1 2.2 2.3 2.4 1) Eliminate Interactive Programming Mode. 2) Programming pulse change, from 100us to 50us IPP : 100uA---->10uA Add 100ns speed grade. Add 90ns speed grade. 90ns speed grade VCC=5V10%-->5V5% 8/8/1997 1/31/1998 4/07/1998 5/06/1998 Date 5/30/1997
P/N: PM0329
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MX27C8111
MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-8888 FAX:+886-3-578-8887
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http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the rignt to change product and specifications without notice.
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