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ATA7550
PRELIMINARY DATA SHEET - Rev 0 FEATURES
5.0V 2.5 Gb/s TIA
* * * * *
2.5 Gb/s Differential Output TIA Low Group Delay Single +5V Power Supply Small Size: 0.864mm x 1.014mm 300mW (typ) Power Dissipation
GND
VCC
GND
VOUT
APPLICATIONS
* * *
IIN VOUT GND
SONET/SDH OC-48/STM-16 2.5Gb/s DWDM Fiber optic receivers, transceivers and transponders
CEXT
GND
GND
D1 Package PRODUCT DESCRIPTION
The Anadigics ATA7550D1 is a high-speed 5V transimpedance amplifier (TIA) available in bare die form and manufactured using an InGaP based HBT process. The device is used in conjunction with a
VCC VBIAS
photodetector to convert an optical signal into a differential output voltage. With its low group delay, the ATA7550 is ideally suited for DWDM applications.
VOUT
IIN
VOUT
CEXT
Figure 1: Circuit Block Diagram
07/01
ATA7550
GND
VCC
GND
225m Die Size: 864m x 1014m Die Thickness: 178m VOUT Pad Size: 100m x 100m IIN Pad Pitch: 150m unless VOUT GND
225m
CEXT
GND
GND
Figure 2: Die Size and Layout
Table 1: Pad Description
PAD V CC D ESC R IPTION Posi ti ve Supply Voltage TIA Input C onnecti on for an external C apaci tor TIA Output Voltage (Non-i nverted) TIA Output Voltage (i nverted) +5.0V Photocurrent i nput Sets the low frequency cutoff Logi cal '1' wi th opti cal i nput Logi cal '0' wi th opti cal i nput C OMMEN T
II N
C EXT VOUT VOUT
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PRELIMINARY DATA SHEET - Rev 0 07/01
ATA7550
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Maximum Ratings
V CC IIN TS 7.0V 3mApp Storage Temp -65 C to 125 C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Recommended Operating Conditions
PAR AMETER Operati ng Voltage Range Operati ng Temperature Range(1) D i e Attach Temperature MIN +4.75 -10 TYP +5.0 MAX +5.25 70 260 U N IT V
O O
C C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 1. Defined at the interface between the die and the substrate.
Table 4: DC Electrical Specifications
PAR AMETER Input Offset Voltage Output Offset Voltage Supply C urrent Power D i ssi pati on
MIN
TYP 2.6 3.5 60 300
MAX
U N IT V V
80 420
mA mW
PRELIMINARY DATA SHEET - Rev 0 07/01
3
ATA7550 Table 5: AC Electrical Specifications (2)
PAR AMETER Small Si gnal D i fferenti al Transresi stance (RL - 100 W ) Bandwi dth (-3dB) Low Frequency C utoff (3) Group D elay (1MHz to 1.7GHz; I IN< 250 mApp) Opti cal Sensi ti vi ty (4) Input Noi se C urrent (RMS) (5) Opti cal Overload
(4) (6)
MIN 1500 1600
TYP 2000 1900 30 30 -23
MAX
U N IT
W
MHz kHz ps dB m 800 nA dB m
mA
-3
-1 250
Input C urrent at whi ch Output Li mi ts
Si ngle-Ended Output Voltage (IIN = 20 mApp) Maxi mum D i fferenti al Output Voltage Output Return Loss (1MHz to 10GHz)
15
20 500
mVpp mVpp B
10
Notes: 2. The specifications are based upon the use of a PIN photodetector with a responsivity at 1310nm of 0.9A/W (typical) and a capacitance of CDIODE + CSTRAY = 0.5pF max connected to IIN via a 1nH bond wire. 3. With the use of an external capacitor. 4. Measured at 10-10 BER with a 223 -1 PRBS at 2.488Gb/s. 5. 1.9 GHz bandwidth. 6. Defined as 80% of the maximum output voltage.
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PRELIMINARY DATA SHEET - Rev 0 07/01
ATA7550
PERFORMANCE DATA
Figure 3: External Capacitor Required for Low Frequency Cutoff
10000
1000
Cext(pf)
100 10 0 50 100 150 200 250 300 350 400
Low Frequency Cutoff (kHz)
Figure 4: Differential Output Voltage vs. Input Current
450.0 400.0
Output Voltage (mVpp)
350.0 300.0 250.0 200.0 150.0 100.0 50.0 0.0 0 200 400 600 800 1000
Input Current (uApp)
Figure 5: Eye Diagram with an Optical Input Power of -20dBm
10mV/Div.
100ps/Div.
PRELIMINARY DATA SHEET - Rev 0 07/01
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ATA7550 Figure 6: Eye Diagram with an Optical Input Power of -15dBm
20mV/Div.
100ps/Div.
Figure 7: Eye Diagram with an Optical Input Power of -5dBm
70mV/Div.
100ps/Div.
Figure 8: Eye Diagram with an Optical Input Power of -2dBm
70mV/Div.
100ps/Div.
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PRELIMINARY DATA SHEET - Rev 0 07/01
ATA7550 APPLICATION INFORMATION
Photodiode bypass MIM capacitor
VBIAS VCC
1nF bypass MIM capacitor
1nH typical
0.1F DC blocking capacitor
VOUT (50)
ATA7550
Photodiode
VOUT (50) CEXT
0.1F DC blocking capacitor 1nH typical 1nF MIM capacitor RF and DC ground plane
Figure 9: Bonding Diagram
PRELIMINARY DATA SHEET - Rev 0 07/01
7
ATA7550 Packaging The ATA7550D1 is provided as bare die. For optimum performance, the die should be packaged in a hermetic enclosure and a low inductance ground plane should be made available for power supply bypassing and ground bonds. When packaging the ATA7550D1, the temperature of the die must be kept below 260C to ensure the device reliability. The ATA7550D1 does not have backside metal and must be epoxy mounted. A good thermally conductive, silver filled epoxy is recommended for epoxy mounting. A soft silicon/rubber tip collet or pyramidal collet should be used for die mounting, although tweezers can be used with extreme care. Thermosonic ball bonding, at a stage temperature of 150 to 175C with 1 to 1.3 mil gold wire, is the recommended interconnect technique. The bond force, time and ultrasonic power are all critical parameters and may require optimization to achieve the correct bond without causing bonding pad delamination or damage under the bonding pad. The bond wire from the photodetector to IIN should be made as short as possible. As the inductance of this connection increases beyond 1nH, more gain peaking will occur and the group delay performance will degrade. Output Connections The ATA7550D1 provides a differential output that must be AC coupled to the next stage of the receiver as the output buffer is not designed to drive a DC coupled 50W load. For single-ended applications, one output of the ATA7550D1 must be AC terminated to a 50W load. CEXT Connection In order to achieve the desired low frequency cutoff, an external capacitor is required. A low inductance surface mount chip capacitor or MIM capacitor is recommended. Sensitivity Measurement The typical sensitivity, as specified in the AC characteristics, is 23dBm. This was measured at a BER of 10-10 with a 2.5Gb/s, 223-1 PRBS, using a
lensed single mode fiber with the photodetector and TIA in an open test fixture under the following conditions: Photodetector active area: 50mm Photodetector capacitance: 0.3pF Photodetector responsivity: 0.90A/W Lensed fiber beam width: 13mm (86.5% of contained power) Lensed fiber focal distance: 3mm When the photodetector and TIA are packaged in a hermetic enclosure, with the fiber optimally aligned to the active area of the photodiode, an improvement in sensitivity should be observed.
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PRELIMINARY DATA SHEET - Rev 0 07/01
ATA7550
NOTES
PRELIMINARY DATA SHEET - Rev 0 07/01
9
ATA7550
NOTES
10
PRELIMINARY DATA SHEET - Rev 0 07/01
ATA7550
NOTES
PRELIMINARY DATA SHEET - Rev 0 07/01
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ATA7550
ORDERING INFORMATION
PAR T N U MB ER ATA7550D 1 PAC K AGE OPTION D1 Die PAC K AGE D ESC R IPTION
ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 http://www.anadigics.com Mktg@anadigics.com
IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a products formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices, or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. PRELIMINARY DATA SHEET - Rev 0 07/01
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