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| Preliminary data SPP80P06P SPB80P06P SIPMOS (R) Power-Transistor Features * Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175C operating temperature VDS RDS(on) ID -60 0.023 -80 V * * * * W A Type SPP80P06P SPB80P06P Package Ordering Code Pin 1 G PIN 2/4 D PIN 3 S P-TO220-3-1 Q67042-S4017 P-TO263-3-2 Q67042-S4016 Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -80 -64 Unit A ID T C = 25 C, 1) T C = 100 C Pulsed drain current ID puls EAS EAR dv/dt -320 823 34 6 kV/s mJ T C = 25 C Avalanche energy, single pulse I D = -80 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -80 A, V DS = -48 , di/dt = 200 A/s, T jmax = 175 C Gate source voltage Power dissipation VGS Ptot Tj , Tstg 20 340 -55...+175 55/175/56 V W C T C = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1Current limited by bondwire; with an RthJC = 0.4 K/W the chip is able to carry I = -91A D Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. - SPP80P06P SPB80P06P Unit max. 0.4 62 62 40 K/W RthJC RthJA RthJA - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 A -0.1 -10 -10 0.021 -1 -100 -100 0.023 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.1 VGS = 0 V, I D = -250 A Gate threshold voltage, VGS = VDS I D = -5.5 mA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 C VDS = -60 V, V GS = 0 V, T j = 150 C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -64 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-11-22 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Input capacitance SPP80P06P SPB80P06P Values typ. max. Unit VDS2*I D*RDS(on)max , ID = -64 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance gfs Ciss Coss Crss t d(on) 18 - 36 4026 1252 437 24 5033 1565 546 36 S pF VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Rise time tr - 18 27 VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Turn-off delay time t d(off) - 56 84 VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Fall time tf - 30 45 VDD = -30 V, V GS = -10 V, ID = -64 A, RG = 1 W Page 3 1999-11-22 Preliminary data Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate to source charge SPP80P06P SPB80P06P Values typ. max. Unit Q gs Q gd Qg V(plateau) - 27.4 50 115 -6.2 41 75 173 - nC VDD = -48 V, ID = -80 A Gate to drain charge VDD = -48 V, ID = -80 A Gate charge total VDD = -48 V, ID = -80 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -80 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -1.2 117 420 max. -80 -320 -1.6 175 630 Unit IS ISM VSD trr Qrr - A T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -80 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/s Page 4 1999-11-22 Preliminary data Power dissipation Drain current parameter: VGS 10 V SPP80P06P SPP80P06P SPB80P06P Ptot = f (TC) SPP80P06P ID = f (TC ) -90 360 W 280 240 A -70 -60 Ptot ID 200 160 120 80 40 0 0 -50 -40 -30 -20 -10 0 0 20 40 60 80 100 120 140 160C 190 20 40 60 80 100 120 140 160C 190 TC TC Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T C = 25 C -10 3 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP80P06P SPP80P06P K/W A tp = 14.0s 10 0 -10 2 Z thJC 100 s 10 -1 ID V DS /I D = 1 ms 10 -2 D = 0.50 0.20 10 -3 DS ( on ) -10 1 R 10 ms 0.10 0.05 DC 10 -4 single pulse 0.02 0.01 -10 0 -1 -10 -10 0 -10 1 V -10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 5 tp 1999-11-22 Preliminary data Typ. output characteristic SPP80P06P SPB80P06P Typ. drain-source-on-resistance I D = f (VDS); T j=25C parameter: tp = 80 s SPP80P06P RDS(on) = f (ID ) parameter: VGS SPP80P06P -190 Ptot = 340.00W k j VGS [V] a b 0.075 A -160 -140 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 W b c d e f g h i 0.060 i c d RDS(on) 0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 ID -120 -100 -80 -60 -40 -20 0 0 c e h f g g h i fj k e d 0.015 0.010 VGS [V] = b c d e f -4.5 -5.0 -5.5 -6.0 -6.5 g h i j k -7.0 -7.5 -8.0 -9.0 -10.0 b a 0.005 -8 jk -1 -2 -3 -4 -5 -6 -7 V -10 0.000 0 -20 -40 -60 -80 -100 -120 A -160 VDS ID Typ. transfer characteristics I D= f ( V GS ) VDS 2 x I D x RDS(on)max parameter: tp = 80 s -80 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: gfs 50 A S 40 -60 35 -50 gfs -1 -2 -3 -4 -5 -6 -7 -8 ID 30 25 20 15 -40 -30 -20 10 -10 5 0 0 0 0 V -10 VGS -10 -20 -30 -40 -50 -60 -70 -80 A -100 ID Page 6 1999-11-22 Preliminary data Drain-source on-state resistance Gate threshold voltage SPP80P06P SPB80P06P RDS(on) = f (Tj) parameter : I D = -64 A, VGS = -10 V SPP80P06P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -5.5 mA -5.0 0.070 W V 98% -4.0 0.060 0.055 RDS(on) 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 140 C 200 V GS(th) -3.5 typ -3.0 -2.5 98% typ 2% -2.0 -1.5 -1.0 -0.5 0.0 -60 -20 20 60 100 140 Tj C 200 Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 5 IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPP80P06P pF A 10 4 10 2 C Ciss Coss 10 3 10 1 IF Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 -5 -10 -15 V -25 10 0 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 1999-11-22 Preliminary data Avalanche energy Typ. gate charge SPP80P06P SPB80P06P EAS = f (Tj) 850 para.: I D = -80 A , VDD = -25 V, RGS = 25 W mJ VGS = f (QGate ) parameter: ID = -80 A pulsed SPP80P06P -16 V 700 -12 600 E AS VGS -10 500 0,2 VDS max 0,8 VDS max 400 -8 300 200 -6 -4 100 -2 0 25 45 65 85 105 125 145 C 185 Tj 0 0 20 40 60 80 100 120 140 nC 180 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPP80P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 140 C 200 Tj Page 8 1999-11-22 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. SPP80P06P SPB80P06P Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-11-22 |
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