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| RF2146 2 Typical Applications * 4.8V CDMA PCS Handsets * 4.8V TDMA PCS Handsets * 4.8V PACS PCS Handsets * Driver Amplifier in Cellular Base Stations * Portable Battery-Powered Equipment PCS LINEAR POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2146 is a high-power, high-efficiency linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 4-cell CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 1500MHz to 2000MHz band. The device is selfcontained with 50 input and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics. 0.020 REF 0.157 0.150 0.020 0.014 -A0.008 0.004 0.393 0.386 0.034 REF 0.068 0.064 0.244 0.229 8 MAX 0 MIN 0.068 0.053 NOTES: 1. Shaded lead is pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.004 with respect to datum "A". 4. Max deviation from package center to leadframe center - 0.004. 5. Max misalignment between top center and bottom center - 0.004. 0.034 0.016 0.009 0.007 Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS ! Package Style: CJ2BAT0 GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Single 4V to 6.5V Supply * 28.5dBm Linear Output Power * 18.5dB Gain With Analog Gain Control * 37% Linear Efficiency * On-board Power Down Mode * 1500MHz to 2000MHz Operation VCC GND GND RF IN GND GND GND GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 GND GND GND RF OUT RF OUT GND GND PC BIAS Ordering Information RF2146 RF2146 PCBA PCS Linear Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A3 001026 2-147 RF2146 Absolute Maximum Ratings Parameter Supply Voltage (No RF) Supply Voltage (POUT<30dBm) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Rating -0.5 to +8.0 -0.5 to +7.5 -0.5 to +5.0 or VCC 500 +15 10:1 -30 to +90 -40 to +150 Unit VDC VDC V mA dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Usable Frequency Range Linear Gain Maximum Linear Output Power Total Linear Efficiency Input Power for 28 dBm Output Adjacent Channel Power Rejection Input VSWR Second Harmonic Specification Min. Typ. Max. Unit Condition T=25 C, VCC =4.8V, VPC =3.6V, PIN =+10dBm, Freq=1880MHz 1500 to 2000 18.5 28.5 37 +10 -45 <2:1 -35 25 200 350 0 3.6 4.0 to 6.5 13 70 19 MHz dB CDMA Modulation % dBm dBc CDMA Modulation, +28 dBm Output, At 1.25MHz Offset Including Second Harmonic Trap dBc dB ns ns A V V V mA mA Power Down Off Isolation Turn On Time Turn Off Time Total Current VPC "OFF" Voltage VPC "ON" Voltage Up to -0.5 dB of Final Power Down to +0.5 dB of Final Power "OFF" State Threshold Voltage at Input Threshold Voltage at Input Operating voltage "ON" State VPC =3.6V, No RF Applied 3.4 TBD 0.2 4.0 Power Supply Power Supply Voltage Current into VPC pin Idle Current 2-148 Rev A3 001026 RF2146 Pin 1 Function VCC Description Power supply for the driver stage, and interstage matching. Shunt capacitance is required on this pin. The value of the capacitance is frequency dependent. 4.7pF centers the gain at 1880 MHz. Interface Schematic VCC RF IN From Bias Stages 2 3 4 GND GND RF IN 5 6 7 8 9 GND GND GND BYP1 PC RF input. This is a 50 input, but the actual input impedance depends on the interstage matching network connected to pin 1. An external DC blocking capacitor is required if this port is connected to a DC path to ground or a DC voltage. Ground connection for the driver stage. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 2. Same as pin 2. Bypass Pin. Part of the matching circuit for interstage match. DC connected to VCC1. Use a suitable bypass capacitor to ground. Keep capacitor as close to pin as possible. Power Control. When this pin is "low", all circuits are shut off. A "low" is typically 0.5V. When this pin is "high", the part operates normally, and the pin consumes approximately 13mA during normal operation. This pin should never exceed 5V. See pin 1. See pin 1. PC To RF Transistors 10 11 12 GND GND RF OUT Same as pin 2. Same as pin 2. RF Output and power supply for the output stage. The two output pins are combined, and bias voltage for the final stage is provided through these pins. An external matching network is required to provide the optimum load impedance; see the application schematics for details. Same as pin 12. Same as pin 2. Same as pin 2. Bypass Pin. Part of the matching circuit for interstage match. DC connected to VCC1. For 1880 MHz operation, use a 3.3pF capacitor to ground. Keep capacitor as close to pin as possible. See pin 1. RF OUT From Bias Stages 13 14 15 16 RF OUT GND GND BYP2 See pin 12. Rev A3 001026 2-149 POWER AMPLIFIERS Ground connection for final stage. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 2. 2 RF2146 Application Schematic 1880MHz L=500 mil, W=20 mil VCC 1 3.3 F 22 pF 4.7 pF 2 3 RF IN 22 pF 5 (PCB mat'l: FR-4; Thickness: 31 mil; 28 mil core) 6 7 8 22 pF 12 11 10 9 22 pF 3.3 F PC 3.3 nH 3.3 pF 22 pF 4 16 15 14 13 RF OUT 1/4 Wavelength Line; L=910 mil, W=20 mil 3.3 pF 22 pF 1 nF 3.3 F VCC 2 POWER AMPLIFIERS BIAS Application Schematic 2150MHz L=500 mil, W=20 mil VCC 3.3 F 22 pF 6.2 pF 1 2 3 RF IN 10 pF 5 (PCB mat'l: FR-4; Thickness: 31 mil; 28 mil core) 6 7 8 100 pF 12 11 10 9 22 pF 3.3 F PC 1 pF 2.2 nH 1.8 pF 22 pF 4 16 15 14 13 RF OUT 1/4 Wavelength Line; L=910 mil, W=20 mil 1.6 pF 22 pF 3.3 F VCC BIAS 2-150 Rev A3 001026 RF2146 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) RF2146 L=500 mil, W=20 mil VCC C20 3.3 F C11 100 pF C1 4.7 pF 1 2 3 RF IN C5 100 pF 4 5 6 7 8 C2 100 pF 16 15 14 13 RF OUT 12 11 10 9 C4 100 pF C19 3.3 F PC C7 3.3 pF L1 3.3 nH C8 100 pF 1/4 Wavelength Line; L=910 mil, W=20 mil C3 3.3 pF 22 pF 1 nF 3.3 F VCC 2 POWER AMPLIFIERS (PCB mat'l: FR-4; Thickness: 31 mil; 28 mil core) Rev A3 001026 2-151 RF2146 Evaluation Board Layout 2" x 2" 2 POWER AMPLIFIERS 2-152 Rev A3 001026 RF2146 Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 -40 ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz +25C 25 -30C +85C -45 +25C -30C +85C ACPR (dBc) Gain (dB) 20 -50 2 POWER AMPLIFIERS 5 10 15 20 25 30 15 -55 10 -60 5 -10 -5 0 5 10 15 -65 Pin (dBm) Pout (dBm) Gain vs. Pin Vpc=3.6 V, 1.88 GHz, +25C 30 -40 ACPR @ 1.25 MHz Offset vs. Pout Vpc=3.6 V, 1.88 GHz, +25C Vcc = 4.8 V 25 Vcc = 4.2 V -45 Vcc = 4.8 V Vcc = 4.2 V 15 ACPR (dBc) -10 -5 0 5 10 15 Pout (dBm) 20 -50 -55 10 -60 5 -65 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Gain vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25C 30 -40 ACPR @ 1.25 MHz Offset vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25C 1.88 GHz 25 1.91 GHz 1.85 GHz -45 1.88 GHz 1.91 GHz 1.85 GHz 15 ACPR (dBc) -10 -5 0 5 10 15 Gain (dB) 20 -50 -55 10 -60 5 -65 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Rev A3 001026 2-153 RF2146 Pout vs. Pin Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz 30 50 Efficiency vs. Pout Vcc=4.8 V, Vpc=3.6 V, 1.88 GHz +25C 25 -30C +85C 40 +25C -30C +85C POWER AMPLIFIERS Pout (dBm) 20 Efficiency (%) -10 -5 0 5 10 15 2 30 15 20 10 10 5 0 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Pout vs. Pin Vpc=3.6 V, 1.88 GHz, +25C 30 50 Efficiency vs. Pout Vpc=3.6 V, 1.88 GHz, +25C Vcc = 4.8 V 25 Vcc = 4.2 V 40 Vcc = 4.8 V Vcc = 4.2 V Pout (dBm) 20 Efficiency (%) -10 -5 0 5 10 15 30 15 20 10 10 5 0 5 10 15 20 25 30 Pin (dBm) Pout (dBm) Pout vs. Pin Vcc=4.8 V, Vpc=3.6 V, +25C 30 50 Efficiency vs. Pout Vcc=4.8 V, Vpc=3.6 V, +25C 1.88 GHz 25 1.91 GHz 1.85 GHz 40 1.88 GHz 1.91 GHz 1.85 GHz Pout (dBm) 20 Efficiency (%) -10 -5 0 5 10 15 30 15 20 10 10 5 0 5 10 15 20 25 30 Pin (dBm) Pout (dBm) 2-154 Rev A3 001026 |
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