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NJL5190K/92K
GENERAL PURPOSE PHOTO REFLECTOR
s GENERAL DESCRIPTION
The NJL5190K/5192K are the single-in-line super miniature and super thin general purpose photo reflectors, which consist of high output infrared emitting and high sensitive Si photo transistor, and attain high cost performance.
s FEATURES
* Super miniature, super thin type * Built-in visible light cut-off filter. * High output, high S/N ratio.
s APPLICATIONS
* End detector of video, audio tape. * Rotation detection and control of various motors, audio turntables. * Paper edge detection and mechanism timing detection of facsimile printer, X-Y recorder. * Reading film information and mechanism timing detection of camera. * Reading out the characters of bar code reader, encoder and the automatic vending machine. * Various detection of industrial system, such as FDD, Robot.
s ABSOLUTE MAXIMUM RATINGS (Ta=25C)
PARAMETER SYMBOL Emitter Forward Current (Continuous) IF Reverse Voltage (Continuous) VR Power Dissipation PD Detector Collector-Emitter Voltage VCEO Emitter-Collector Voltage VECO Collector Current IC Collector Power Dissipation PC Coupled Total Power Dissipation Operating Temperature Storage Temperature Soldering Temperature Ptot Topr Tstg Tsol RATINGS 30 6 45 16 6 10 25 60 -20 ~ +85 -30 ~ +85 260(10sec. 1.5mm from body) UNIT mA V mW V V mA mW mW C C C
s ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C)
PARAMETER Emitter Forward Voltage Reverse Current Capacitance Detector Dark Current Collector-Emitter Voltage Coupled Output Current Operating Dark Current Rise Time Fall Time SYMBOL VF IR Ct ICEO VCEO IO ICEOD tr tf TEST CONDITION IF=4mA VR=6V VR=0V,f=1MHz VCE=10V IC=100A IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100A,VCE=2V,RL=1K,d=0.7mm IO=100A,VCE=2V,RL=1K,d=0.7mm MIN TYP TYP 1.4 10 UNIT V A pF A V A A S S
-- -- -- -- 16
50
-- -- 25 -- -- -- -- 30 30
--
0.2
--
150 0.2
-- -- --
-- --
-1-
NJL5190K/92K
s OUTLINE (typ.) Unit : mm
C C
4.4
1.65
4.4
0.8
2.6
collector
5 m in. 0.85 0.8
2.6
0.7
0.4
0.2 1.65
0.5 3.8 min.
x
y
z
0.4 1.78 1.78
0.8
1.78 1.78
0.85
NJL5190K
0.8
2.6
cathode
5 m in. 0.85 0.8
2.6
0.7
0.4
0.2 1.65
0.5 3.8 min.
x
y
z
0.4 1.78 1.78
0.8
1.78 1.78
0.85
NJL5192K
-2-
0. 7
0. 7
x cathode y anode z emitter
x cathode y anode
collector
0.5
z emitter
3.4
0.2
x
y
z
NJL5190K-F
C
C
4.4
1.65
4.4
0. 7
0. 7
x emitter y collector z
anode
x emitter y collector
cathode
z anode
3.4
0.5
0.2
x
y
z
NJL5192K-F
NJL5190K/92K
s MEASURING SPECIFICATION FOR OUTPUT CURRENT
The output current can be measured when reflected at the aluminum
0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface IF
0.7mm
IO
IF
IO
V CE
V CE
NJL5190K
NJL5192K
s MEASURING CIRCUIT FOR OPERATING DARK CURRENT
Light Sealed Dark Box Light Sealed Dark Box
IF
I CEOD IF I CEOD
VCE
VCE
NJL5190K
NJL5192K
s MEASURING SPECIFICATION FOR EDGE RESPONSE
Aluminum Evaporation Surface Edge l
d=0.7mm Lead
-3-
NJL5190K/92K
s MEASURING CIRCUIT FOR RESPONSE TIME
0.7mm Aluminum Evaporation Surface IO V+ tw Input
RD
IF
90% P.G. RL OSC Output tr tf 10%
NJL5190K
0.7mm Aluminum Evaporation Surface IO V+
RD
IF
P.G.
RL
OSC
NJL5192K
s MAXIMUM RATING CURVES
Power Dissipation vs. Temperature
100
Forward Current vs. Temperature
50
Power Dissipation P(mW)
Forward Current IF(mA)
40 30 20 10 0
50
Total Power Dissipation
Collector Power Dissipation
0 0 20 40 60 80 100
0
20
40
60
80
100
Ambient Temperature Ta()
Ambient Temperature Ta()
-4-
NJL5190K/92K
s TYPICAL CHARACTERISTICS
Forward Current vs. Forward Voltage
100
Forward Voltage vs. Temperature 1.6
Forward Current IF (mA)
Forward Voltage VF (V)
1.4
IF=30mA
10
1.2
IF=4mA
1
1 0 1 2
0.8 -40 -20
0
20
40
60 80 100
Forward Voltage VF (V)
Dark Current vs. Temperature
10000 1000
Ambient Temperature Ta (C)
Operating Dark Current vs. Temperature
1000
Operating Currnt Iceod (A)
Dark Current Iceo (nA)
100 10 1 0.1 0.01 Vce=10V 0.001 -40 -20 0 20 40 60 80 100
100
10
1
IF=4mA,Vce=2V 0.1 -40 -20 0 20 40 60 80 100
Ambient Temperature Ta (C) Output Current vs. Forward Current (Ta=25C)
Relative Output Current Io/Io(25C) (%)
300 250 200 150 100 Vce=2V,d=0.7mm 50 0 0 2 4 6 8 10
120
Ambient Temperature Ta (C)
Output Current vs. Temperature
Output Current Io (A)
100
80
60 IF=4mA,VCE=2V 40
20
0 -40 -20 0 20 40 60 80 100
Forward Current IF (mA)
Ambient Temperature Ta (C)
-5-
NJL5190K/92K
Output Characteristics (Ta=25C)
IF=10mA 350
Vce Saturation (Ta=25C)
Collector-Emitter Voltage Vce (V)
400
0.3
Output Current Io (A)
300 250 200 150 100 50 0 0 1 2 3
IF=8mA
Io=200A Io=150A 0.2 Io=100A Io=70A Io=50A Io=30A 0.1 Io=10A
IF=6mA
IF=4mA IF=2mA
0 0.1 1 10
4
5
Collector-Emitter Voltage Vce (V)
Output Current vs. Distance (Ta=25C)
120% Vce=2V,IF=4mA Relative Output Current Io/Io(max.)
Relative Output Current Io/Io(max.)
Forward Current IF (mA)
Output Current vs. Edge Distance (Ta=25C)
120% Vce=2V,IF=4mA,d=0.7mm 100%
100%
80%
80%
60%
60%
40%
40%
20%
20%
0% 0 1 2 3 4 5
0%
-1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 1
Reflector Distanced(mm)
Edge Distance l (mm)
Spectral Response (Ta=25C) 120 100
1000
Switching Time vs. Load Resistance (Ta=25C)
Relative Response (%)
Switching Time t (S)
80 60 Vce=2V 40 20
100
tr tf
td 10
Vce=2V,Io=100A
0 500 600 700
1
800 900 1000
0.1
1
10
Wavelength (nm)
-6-
Load Resistance RL (K )
NJL5190K/92K
PRECAUTION FOR HANDLING
1. Soldering
1) Avoid the reflow method and solder to touch the body of the device during wave soldering. This is to prevent changes in optical characteristics of the device. 2) Recommended in Soldering Temperature Time Lead Soldering Position 260C maximum less than 10 seconds At least 1.5mm from body 3) Soldering is recommended to be done in as short period of the time as possible by controlling the temperature of the soldering iron or by the iron of less than 15 watts. 4) The resin gets softened right after soldered, so, the following care has to be taken. - Not to contact the lens surface to anything - Not to dip the device into water or any solvents 5) It is recommended not to solder when the leads or between the lead get pulled, depressed or twisted. 6) In the case of using rosin flux, be careful to avoid contact with the lens surface. If the lens is covered with the flux, the specified characteristics cannot be achieved.
2. Post Solder Cleaning
1) Organic solvents for flux removal like trichloroethlene, acetone, thinner etc, might attach the lens surface. It is preferable to use less reactive solvents, Methyl Alcohol, Isopropyle Alcohol. 2) Cleaning Operation Cleaning Solvent Temperature : 35C maximum Dipping Time : 3 minute maximum
3. Attention in handling
1) Treat not to touch the lens surface. 2) Avoid dust and any other foreign materials(flux, paints, bonding material, etc.) on the lens surface. 3) Never to apply reverse voltage(VEC) of more than 6V on the photo transistor when measuring the characteristics or adjusting the system. If applied, it causes to lower the sensitivity. 4) When mounting, special care has to be taken on the mounting position and tilting of the device because it is very important to place the device to the optimum position to the object.
4. Storage
The leads are silver plated and they are discolored if the device is left open to the air for long after taken out of the envelop. It causes deterioration of soldering characteristics. Mount the device as short as possible after opening the envelope.
-7-
NJL5190K/92K MEMO
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

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