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(R) BAT54, A, C, S SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS A K1 A VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K Nc A K1 K2 A K K2 BAT54 DESCRIPTION Schottky barrier diodes encapsulated in a SOT-23 small SMD packages. Double diodes with different pining are available. K A1 A2 A2 A1 A1 K2 BAT54A A2 K K1 A2 A1 K2 K1 BAT54C SOT-23 BAT54S ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFSM Ptot Tstg Tj TL Parameter Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s tp=10ms sinusoidal Tamb = 25C Value 30 0.3 1 250 - 65 to +150 150 260 Unit V A A mW C C C Note 1: for double diodes, Ptot is the total dissipation of both diodes. *: dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj June 1999 - Ed: 3A 1/5 BAT54, A, C, S THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient (*) Parameter Value 500 Unit C/W (*) Mounted on epoxy board with recommended pad layout. STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * Parameters Forward voltage drop Tests conditions Tj = 25C IF = 0.1 mA IF = 1 mA IF = 10 mA IF = 30 mA IF = 100 mA IR ** Reverse leakage current Tj = 25C Tj = 100C Pulse test : * tp = 380 s, < 2% ** tp = 5 ms, < 2% Min. Typ. Max. 240 320 400 500 900 1 100 Unit mV VR = 30 V A DYNAMIC CHARACTERISTICS (Tj = 25 C) Symbol C trr Parameters Junction capacitance Reverse recovery time Tests conditions Tj = 25C IF = 10 mA Irr = 1 mA VR = 1 V F = 1 MHz Min. Typ. Max. 10 5 Unit pF ns IR = 10 mA Tj = 25C RL = 100 Fig.1 : Average forward power dissipation versus average forward current. PF(av)(W) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 IF(av) (A) 0.00 0.00 0.05 0.10 0.15 0.20 =tp/T tp T Fig.2 : Average forward current versus ambient temperature ( = 1). 0.35 IF(av)(A) = 0.1 = 0.05 = 0.2 = 0.5 0.30 0.25 =1 0.20 0.15 0.10 0.05 =tp/T T tp Tamb(C) 50 75 100 125 150 0.25 0.30 0.00 0 25 2/5 BAT54, A, C, S Fig.3 : Non repetitive surge peak forward current versus overload duration (maximum values). Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm x 8mm x 0.5mm). Zth(j-a)/Rth(j-a) 1.00 = 0.5 IM(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 IM 0.2 0.1 0.0 1E-3 = 0.2 Ta=25C = 0.1 Ta=50C 0.10 T Single pulse Ta=100C t =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 =tp/T tp 1E+1 1E+2 Fig.5 : Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+2 Tj=100C Fig.6 : Reverse leakage current versus junction temperature. IR(A) 1E+4 VR=30V 1E+3 1E+2 1E+1 1E+1 1E+0 1E-1 1E-2 Tj=50C 1E+0 Tj=25C 1E-1 VR(V) 0 5 10 15 20 25 30 Tj(C) 1E-2 0 25 50 75 100 125 150 Fig.7 : Junction capacitance versus reverse voltage applied (typical values). C(pF) 10 F=1MHz Tj=25C Fig.8 : Forward voltage drop versus forward current (typical values). IFM(A) 5E-1 1E-1 Tj=100C 5 1E-2 Tj=50C 2 VR(V) 1 1 2 5 10 20 30 Tj=25C 1E-3 VFM(V) 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3/5 BAT54, A, C, S PACKAGE MECHANICAL DATA SOT-23 E A DIMENSIONS REF. e B e1 D Millimeters Min. Max. 1.4 0.1 0.51 0.18 3.04 1.05 2.1 1.6 2.75 0.65 0.89 0 0.3 0.085 2.75 0.85 1.7 1.2 2.1 0.35 Inches Min. 0.035 0 0.012 0.003 0.108 0.033 0.067 0.047 0.083 0.014 Max. 0.055 0.004 0.02 0.007 0.12 0.041 0.083 0.063 0.108 0.026 A A1 B S A1 c D e L e1 E H L S c H 0.6 typ. 0.024 typ. Ordering type BAT54FILM BAT54AFILM BAT54CFILM BAT54SFILM Marking D86 D84 D87 D88 Package SOT-23 SOT-23 SOT-23 SOT-23 Weight 0.01g 0.01g 0.01g 0.01g Base qty 3000 3000 3000 3000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Epoxy meets UL94,V0 4/5 BAT54, A, C, S FOOTPRINT DIMENSIONS COMPATIBLE SOT-23 / SC-59 (in millimeters and inches) 0.9 0.035 0.9 0.035 OPTIMIZED SOT-23 FOOTPRINT DIMENSIONS (in millimeters and inches) 0.9 0.035 1.1 0.043 0.9 0.035 2.35 0.92 1.45 0.037 mm inch 2.35 0.92 1.9 0.075 2 0.079 1 0.040 mm inch 1.1 0.043 0.9 0.035 0.9 0.035 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 1 0.040 1 0.040 |
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