 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3407 Switching Regulator Applications Unit: mm * * * * Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.7 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-12 2SK3407 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 3/4 30 3/4 450 2.4 3/4 3.5 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 0.48 7.5 1400 240 590 35 Max 10 3/4 100 3/4 3.4 0.65 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 10 V VGS 0V 50 9 ID = 5 A 3/4 3/4 3/4 ns 3/4 VOUT Turn-on time Switching time Fall time ton 3/4 RL = 40 W 50 tf Duty < 1%, tw = 10 ms = VDD ~ 200 V - 3/4 3/4 3/4 VDD ~ 360 V, VGS = 10 V, ID = 10 A 3/4 3/4 80 3/4 3/4 3/4 3/4 3/4 nC Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain "miller" charge toff Qg Qgs Qgd 260 35 19 16 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 280 2.7 Max 10 40 -1.7 3/4 3/4 Unit A A V ns mC Marking Lot Number Type K3407 Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-12 2SK3407 ID - VDS 10 Common source Tc = 25C Pulse test 15 20 10 6 16 15 10 ID - VDS Common source Tc = 25C Pulse test 6.5 12 6.25 6 8 5.5 4 VGS = 4.5 V 10 0 0 10 20 30 40 50 8 6.75 (A) ID 6 Drain current 5.5 4 5.25 2 5 VGS = 4.5 V 0 0 2 4 6 8 Drain-source voltage VDS (V) Drain current ID 5.75 (A) Drain-source voltage VDS (V) ID - VGS 20 Common source VDS = 20 V Pulse test 10 VDS - VGS Common source Tc = 25C Pulse test (V) 16 8 (A) VDS ID Drain-source voltage 12 6 ID = 10 A Drain current 8 25 4 100 Tc = -55C 4 5 2 2.5 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID (S) 30 Common source VDS = 20 V 10 Pulse test RDS (ON) - ID 5 Common source 25 100 Tc = 25C Pulse test iYfsi Forward transfer admittance Drain-source ON resistance RDS (ON) (W) Tc = -55C 3 1 VGS = 10, 15 V 1 0.3 0.1 0.1 0.3 1 3 10 30 100 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2002-08-12 2SK3407 RDS (ON) - Tc 2.0 Common source VGS = 10 V Pulse test 100 Common source Tc = 25C 10 Pulse test IDR - VDS Drain-source ON resistance RDS (ON) (W) 1.6 5 1.2 ID = 10 A 2.5 0.8 Drain reverse current IDR (A) 1 10 5 0.1 3 1 0.01 0 VGS = 0, -1 V -0.6 -0.8 -1 -1.2 0.4 0 -80 -40 0 40 80 120 160 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 3000 Ciss 6 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) 300 1000 5 Capacitance C (pF) 300 4 100 Coss 3 30 Common source VGS = 0 V 10 f = 1 MHz Tc = 25C 3 0.1 0.3 1 3 10 30 100 Crss 2 1 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 500 Dynamic input/output characteristics Common source ID = 10 A Tc = 25C Pulse test 20 (W) (V) 40 400 VDS 300 16 PD VDS Drain power dissipation Drain-source voltage 180 200 360 8 20 10 100 VGS 4 0 0 40 80 120 160 200 0 0 10 20 30 40 0 50 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-08-12 Gate-source voltage 30 VDD = 90 V 12 VGS (V) 2SK3407 rth - tw 10 5 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.02 Single pulse PDM t T Duty = t/T Rth (ch-c) = 3.125C/W 100 m 1m 10 m 100 m 1 10 0.05 0.01 0.005 0.003 0.01 0.001 10 m Pulse width tw (S) Safe operating area 100 ID max (pulse) * 400 EAS - Tch (mJ) 1 ms * 10 Avalanche energy EAS ID max (continuous) 100 ms * 300 (A) 200 Drain current ID 1 DC operation Tc = 25C 100 0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 100 1000 VDSS max 50 75 100 125 150 Channel temperature (initial) Tch (C) 15 V -15 V BVDSS IAR VDD VDS Drain-source voltage VDS (V) Test circuit RG = 25 W VDD = 90 V, L = 3.7 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-12 2SK3407 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-12 |
Price & Availability of 2SK3407
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |