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SGL60N90DG3
IGBT
SGL60N90DG3
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications.
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.0 V @ IC = 60A High input impedance Built-in fast recovery diode
Applications
Home appliances, induction heaters, induction heating JARs, and microwave ovens.
C
G
TO-264
G C E
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGL60N90DG3 900 25 60 42 120 15 180 72 -55 to +150 -55 to +150 300
Units V V A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.69 2.08 25 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
Electrical Characteristics of the IGBT
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 900 ------1.0 500 V mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V 4.0 --5.0 1.4 2.0 7.0 1.8 2.7 V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz ---6500 250 220 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 60A, RG = 51, VGE=15V, Resistive Load, TC = 25C VCE = 600 V, IC = 60A, VGE = 15V -------250 450 450 250 260 70 60 400 700 700 400 300 --ns ns ns ns nC nC nC
Electrical Characteristics of DIODE T
Symbol VFM trr IR Parameter Diode Forward Voltage Diode Reverse Recovery Time Instantaneous Reverse Current
C
= 25C unless otherwise noted
Test Conditions IF = 15A IF = 60A IF = 60A di/dt = 20 A/us VRRM = 900V
Min. ----
Typ. 1.2 1.75 1.2 0.05
Max. 1.7 2.0 1.5 2
Units V V us uA
(c)2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
100
Common Emitter T C = 25
20V
100 8V 9V
80
Collector Current, I C [A]
Collector Current, I C [A]
10V 15V
80
Common Emitter VGE = 15V TC = 25 TC = 125 ------
60 7V
60
40
40
20 VGE = 6V 0 0 1 2 3 4 5
20
0 0 1 2 3
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3
Common Emitter VGE = 15V 80A 60A
10
Common Emitter TC = -40
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
8
2 30A IC = 10A 1
6
4
30A 60A 80A
2 IC = 10A
0 -50 0 50 100 150
0 4 8 12 16 20
Case Temperature, TC []
Gate-Emitter Voltage, VGE [V]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Saturation Voltage vs. VGE
10
Common Emitter TC = 25
10
Common Emitter TC = 125
Collector-Emitter Voltage, VCE [V]
6
Collector-Emitter Voltage, V CE [V]
8
8
6 30A 4 60A 80A 2 IC = 10A 0
30A 4 60A 80A 2 IC = 10A 0 4 8 12 16 20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGL60N90DG3 Rev. A1
SGL60N90DG3
10000 10000 Cies VCC = 600V IC = 60A VGE = 15V TC = 25
Capacitance [pF]
1000
Switching Time [ns]
1000
Tr Tf 100 Tdoff Tdon
Coes 100 Common Emitter VGE = 0V, f = 1MHz TC = 25 0.1 1 10 Cres
10 0 50 100 150 200
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs. Gate Resistance
1000 VCC = 600V RG = 51 VGE = 15V T C = 25 Tdoff
15
Gate-Emitter Voltage, VGE [V]
12
Common Emitter VCC = 600V, RL = 10 TC = 25
Swing Time [ns]
9
Tr Tdon Tf
6
3
100 10 20 30 40 50 60
0 0 100 200 300
Collector Current, I C [A]
Gate Charge, Qg [nC]
Fig 9. Switching Characteristics vs. Collector Current
Fig 10. Gate Charge Characteristics
10 IC MAX. (Pulsed) 100 10us 100us 10 10ms DC Operation 1ms
Thermal Response, Zthjc [ C/W]
IC MAX. (Continuous)
Collector Current , I C [A]
o
1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01
t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC Pdm t1
1
Single Nonrepetitive Pulse T C = 25 Curve must be darated linearly with increase in temperature 1 10 100 1000
single pulse 1E-3 10
-4
0.1
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, VCE [V]
Rectangular Pulse Duration [sec]
Fig 11. SOA Characteristics
Fig 12. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
100
Reverse Recovery Time, t rr [us]
TC = 25 TC = 100 ------
1.2 IF = 60A T C = 25
120
Reverse Recovery Current, I rr [A]
1.0
100
Forward Current, IF [A]
10
0.8 trr 0.6
80
60
1
0.4
40
0.2 Irr 0.0
20
0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0
0 0 40 80 120 160 200 240
Forward Voltage, VFM [V]
di/dt [A/ ]
Fig 13. Forward Characteristics
Fig 14. Reverse Recovery Characteristics vs. di/dt
1.6
16 di/dt = -20A/ TC = 25 14 12 10 trr 8 6 4 2 0 10 20 30 40 50 60
1000
Reverse Recovery Time, trr [us]
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0
TC = 25 TC = 150 ------
Reverse Recovery Current, Irr [A]
100
Reverse Curent, I R [uA]
10
1
Irr
0.1
0.01
1E-3 0 300 600 900
Forward Current, I F [A]
Reverse Voltage, VR [V]
Fig 15. Reverse Recovery Characteristics vs. Forward Current
Fig 16. Reverse Current vs. Reverse Voltage
250
TC = 25
200
Capacitance, Cj [pF]
150
100
50
0 0.1 1 10 100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
(c)2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
Package Dimension
TO-264
6.00 0.20
20.00 0.20
(4.00)
(8.30)
(8.30)
(2.00)
(1.00)
(9.00)
(9.00)
(11.00)
(0.50)
20.00 0.20 2.50 0.10
1.50 0.20
(R1
(7.00)
(7.00)
4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 -0.10
+0.25
(2.00)
20.00 0.50
(R 2.0
o3.3 0 0
.20
.00
0)
)
(1.50)
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.10
+0.25
2.80 0.30
5.00 0.20
3.50 0.20
(0.15)
(1.50)
(2.80)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGL60N90DG3 Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SPMTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

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